FDD6637 [ONSEMI]
P 沟道，PowerTrench® MOSFET，35V，-55A，11.6mΩ;
| 型号： | FDD6637 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，35V，-55A，11.6mΩ PC 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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March 2015
FDD6637
35V P-Channel PowerTrenchÒ MOSFET
General Description
Features
This P-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
·
–55 A, –35 V RDS(ON) = 11.6 mW @ VGS = –10 V
RDS(ON) = 18 mW @ VGS = –4.5 V
·
·
High performance trench technology for extremely
low RDS(ON)
RoHS Compliant
Applications
·
·
Inverter
Power Supplies
D
D
G
G
S
D-PAK
S
(TO-252)
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
–35
Units
V
V
V
A
VDS(Avalanche)
VGSS
Drain-Source Avalanche Voltage (maximum)
Gate-Source Voltage
(Note 4)
–40
±25
ID
Continuous Drain Current @TC=25°C
@TA=25°C
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
–55
–13
Pulsed
–100
57
PD
W
Power Dissipation
@TC=25°C
@TA=25°C
@TA=25°C
(Note 1a)
(Note 1b)
3.1
1.3
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
2.2
40
96
RqJC
RqJA
RqJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
16mm
Quantity
FDD6637
FDD6637
D-PAK (TO-252)
13’’
2500 units
www.fairchildsemi.com
Ó2006 Fairchild Semiconductor Corporation
FDD6637 Rev. 1.2
Electrical Characteristics
T
= 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
EAS
IAS
Drain-Source Avalanche Energy
(Single Pulse)
VDD = -35 V, ID= -11 A, L=1mH
61
mJ
A
Drain-Source Avalanche Current
–14
Off Characteristics(Note 2)
Drain–Source Breakdown
Voltage
BVDSS
IDSS
VGS = 0 V,
VDS = –28 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
ID = –250 mA
–35
–1
V
Zero Gate Voltage Drain Current
–1
mA
IGSS
Gate–Body Leakage
nA
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–1.6
–3
V
VDS = VGS, ID = –250 mA
9.7
14.4
14.7
11.6
18
19
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V,
VGS = –4.5 V, ID = –11 A
VGS = –10 V, ID = –14 A, TJ=125°C
ID = –14 A
mW
gFS
Forward Transconductance
VDS =–5 V,
ID = –14 A
35
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
2370
470
pF
pF
pF
VDS = –20 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
250
RG
Gate Resistance
f = 1.0 MHz
3.6
W
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
18
10
62
36
45
25
7
32
20
ns
ns
Turn–On Rise Time
VDD = –20 V,
VGS = –10 V,
ID = –1 A,
Turn–Off Delay Time
RGEN = 6 W
100
58
ns
Turn–Off Fall Time
ns
Qg
Qg
Qgs
Qgd
Total Gate Charge, VGS = –10V
Total Gate Charge, VGS = –5V
Gate–Source Charge
Gate–Drain Charge
63
nC
nC
nC
nC
35
VDS = – 20 V, ID = –14 A
10
FDD6637 Rev. 1.2
www.fairchildsemi.com
Electrical Characteristics
T
= 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
V
VGS = 0 V, IS = –14 A
(Note 2)
–0.8
–1.2
IF = –14 A, diF/dt = 100 A/µs
trr
Diode Reverse Recovery Time
28
15
ns
Qrr
Diode Reverse Recovery Charge
nC
Notes:
1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
qJA
the drain pins.
R
is guaranteed by design while R
is determined by the user's board design.
qCA
qJC
a)
R
= 40°C/W when mounted on a
b)
R
= 96°C/W when mounted
qJA
qJA
1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
PD
3. Maximum current is calculated as:
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDD6637 Rev. 1.2
www.fairchildsemi.com
Typical Characteristics
100
2.4
2.2
2
VGS = -3.5V
VGS = -10V
-6.0V
-5.0V
-4.5V
80
60
40
20
0
-4.0V
1.8
1.6
1.4
1.2
1
-4.0V
-4.5V
-3.5V
-5.0V
-6.0V
-3.0V
-8.0V
-10V
0.8
0
1
2
3
4
0
20
40
60
80
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.05
1.8
ID = -14A
ID = -7A
VGS = -10V
1.6
1.4
1.2
1
0.04
0.03
0.02
0.01
0
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
1000
VGS = 0V
VDS = -5V
100
10
80
60
40
20
0
TA = -55oC
125oC
TA = 125oC
1
25oC
25oC
0.1
-55oC
0.01
0.001
0.0001
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6637 Rev. 1.2
www.fairchildsemi.com
Typical Characteristics
10
3200
2400
1600
800
0
ID = -14A
VDS = 10V
f = 1MHz
VGS = 0 V
30V
8
6
4
2
0
Ciss
20V
Coss
Crss
0
10
20
30
40
50
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
1000
100
10
100
80
60
40
20
0
SINGLE PULSE
Rq JA = 96°C/W
TA = 25°C
100µs
1ms
10ms
RDS(ON) LIMIT
100ms
1s
10s
DC
1
VGS = -10V
SINGLE PULSE
0.1
0.01
RqJA = 96oC/W
TA = 25oC
0.01
0.1
1
10
100
1000
0
0
1
10
100
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
100
1000
100
10
SINGLE PULSE
Rq JA = 96°C/W
TA = 25°C
80
60
40
20
0
TJ = 25oC
1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
1000
tAV, TIME IN AVANCHE(ms)
t1, TIME (sec)
Figure 11. Single Pulse Maximum Peak
Current
Figure 12. Unclamped Inductive
Switching Capability
FDD6637 Rev. 1.2
www.fairchildsemi.com
Typical Characteristics
1
D = 0.5
q
q
R JA(t) = r(t) * R JA
0.2
q
R JA = 96 °C/W
0.1
0.01
0.1
0.05
P(pk)
0.02
0.01
t1
t2
q
TJ - TA = P * R JA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.001
0.001
0.1
1
10
100
1000
t1, TIME (sec)
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6637 Rev. 1.2
www.fairchildsemi.com
Test Circuits and Waveforms
L
BVDSS
VDS
tP
VDS
VDD
VG
RGEN
-
IAS
DUT
VDD
0V
+
VGS
tp
IAS
vary tP to obtain
required peak IAS
0.01W
tAV
Figure 14. Unclamped Inductive Load Test
Circuit
Figure 15. Unclamped Inductive Waveforms
Drain Current Regulator
Same type as DUT
QG
-
10V
50kW
10V
10mF
+
1mF
-
QGD
QGS
VGS
+ VDD
VG
DUT
Charge, (nC)
Ig(REF)
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveform
tON
RL
tOFF
VDS
td(ON)
td(OFF)
tf
tr
VDS
VGS
-
90%
90%
RGEN
DUT
VDD
+
10%
10%
0V
VGS
Pulse Width £ 1ms
Duty Cycle £ 0.1%
90%
50%
VGS
50%
Pulse Width
10%
0V
Figure 18. Switching Time Test Circuit
Figure 19. Switching Time Waveforms
FDD6637 Rev. 1.2
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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