FDD86250-F085 [ONSEMI]
N 沟道，屏蔽门极，PowerTrench® MOSFET，15 V，50 A，22 mΩ;
| 型号： | FDD86250-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，屏蔽门极，PowerTrench® MOSFET，15 V，50 A，22 mΩ |
| 文件： | 总8页 (文件大小：1019K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
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FDD86250_F085 (Note1)
®
N-Channel Sheilded Gate PowerTrench MOSFET
150 V, 50 A, 22 mΩ
Features
Typical R
= 19.4 mΩ at V = 10V, I = 20 A
GS D
DS(on)
Typical Q
= 28 nC at V = 10V, I = 40 A
g(tot)
GS
D
UIS Capability
D
RoHS Compliant
Qualified to AEC Q101
D
G
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
S
G
D-PAK
(TO-252)
S
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
Ratings
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
150
V
V
VGS
±20
Drain Current - Continuous (VGS=10V) (Note 2)
Pulsed Drain Current
TC = 25°C
TC = 25°C
50
See Figure 4
80
ID
A
EAS
PD
Single Pulse Avalanche Energy
(Note 3)
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate Above 25oC
160
1.06
TJ, TSTG Operating and Storage Temperature
-55 to + 175
0.94
RθJC
RθJA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
(Note 4)
40
Notes:
1: Due to system integration constraints between Fairchild and ON semiconductor, as of November 1, 2017 any product part number with a
underscore will be replaced with a dash. This is a notification.
2: Current is limited by bondwire configuration.
3: Starting T = 25°C, L = 0.1mH, I = 40A, V = 135V during inductor charging and V = 0V during time in avalanche.
J
AS
DD
DD
4: R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θJA
mounting surface of the drain pins.
presented here is based on mounting on a 1 in pad of 2oz copper.
R
is guaranteed by design, while R is determined by the board design. The maximum rating
θJC θJA
2
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD86250
FDD86250_F085
D-PAK(TO-252)
13”
16mm
2500units
Semiconductor Components Industries, LLC, 2017
September, 2017, Rev. 1
Publication Order Number:
FDD86250_F085/D
1
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
IDSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
ID = 250μA, VGS = 0V
150
-
-
-
-
-
1
V
V
DS = 150V TJ = 25oC
-
-
-
μA
mA
nA
VGS = 0V
TJ = 175oC (Note 5)
1
IGSS
VGS = ±20V
±100
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
2
-
3
4
V
TJ = 25oC
19.4
56
22
62
mΩ
mΩ
ID = 20A,
TJ = 175oC (Note 5)
-
V
GS= 10V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1900
169
10
0.5
28
4
-
-
pF
pF
pF
Ω
V
DS = 75V, VGS = 0V,
Coss
Crss
Rg
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
-
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge
VGS = 0 to 10V
VGS = 0 to 2V
37
-
nC
nC
nC
nC
VDD = 120V
ID = 40A
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
11
-
Qgd
7
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay
Rise Time
-
-
-
-
-
-
64
-
ns
ns
ns
ns
ns
ns
14
34
23
5
-
V
DD = 75V, ID = 40A,
VGS = 10V, RGEN = 6Ω
td(off)
tf
Turn-Off Delay
Fall Time
-
-
toff
Turn-Off Time
-
37
Drain-Source Diode Characteristics
I
SD = 40A, VGS = 0V
ISD = 20A, VGS = 0V
DD = 120V, IF = 40A,
dISD/dt = 100A/μs
-
-
-
-
0.9
0.8
91
1.25
1.2
V
VSD
Source-to-Drain Diode Voltage
V
trr
Reverse-Recovery Time
137
355
ns
nC
V
Qrr
Reverse-Recovery Charge
237
Note:
5: The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
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2
Typical Characteristics
60
50
40
30
20
10
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
0.01
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
0.01
10-5
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
5
150
100
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
Typical Characteristics
100
10
1
If R = 0
= (L)(I )/(1.3*RATED BV
1000
100
10
t
- V
)
AV
AS
DSS DD
If R
AV
≠
0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
AS
- V ) +1]
DD
DSS
STARTING TJ = 25oC
100us
1ms
1
OPERATION IN THIS
AREA MAY BE
STARTING TJ = 150oC
LIMITED BY r
DS(on)
SINGLE PULSE
0.1
10ms
T
J
= MAX RATED
100ms
o
T
C
= 25 C
0.01
0.001
0.01
0.1
1
10
100
0.1
1
10
100
500
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
80
80
PULSE DURATION = 250μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDD = 10V
60
10
TJ = 175 o
C
TJ = 25oC
TJ = 25 oC
40
TJ = -55oC
1
TJ = 175oC
20
TJ = -55 oC
0
0.1
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
80
60
40
20
0
80
250μs PULSE WIDTH
Tj=25oC
VGS
15V Top
10V
8V
7V
6V
250μs PULSE WIDTH
Tj=175oC
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
60
5.5V
5V Bottom
40
20
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
Typical Characteristics
200
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 250μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 250μs
DUTY CYCLE = 0.5% MAX
ID = 40A
150
100
50
ID = 40A
VGS = 10V
TJ = 175oC
TJ = 25oC
6
0
4
5
7
8
9
10
-75 -50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
1.25
1.10
VGS = VDS
ID = 5mA
I
D
= 250μA
1.00
0.75
0.50
0.25
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
10
ID = 40A
VDD = 75V
8
Ciss
1000
100
10
VDD = 90V
VDD =60V
6
Coss
4
2
0
f = 1MHz
VGS = 0V
Crss
1
0.1
1
10
100150
0
5
10
15
20
25
30
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
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5
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE O
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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