FDMC035N10X1 [ONSEMI]
N 沟道，PowerTrench® MOSFET，100 V，5.5 A，37 mΩ;
| 型号： | FDMC035N10X1 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，100 V，5.5 A，37 mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：382K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FDMC035N10X1
N-Channel PowerTrench® MOSFET
100 V, 5.5 A, 37 mΩ
Features
General Description
This N-Channel MOSFET is produced using ON
Semiconductor’s advanced PowerTrench technology. This
very high density process is especially tailored to minimize on-
state resistance and optimized for hot swap application.
Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.5 A
Max rDS(on) = 41 mΩ at VGS = 6 V, ID = 5.0 A
Low Profile - 0.8 mm max in Power 33
100% UIL Tested
®
Applications
RoHS Compliant
DC - DC Conversion
PSE Switch
Pin 1
Pin 1
S
S
S
S
D
D
S
G
S
D
D
D
D
D
D
G
Top
Bottom
Power 33
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
100
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
-Continuous
TA = 25°C
(Note 1a)
(Note 4)
(Note 3)
5.5
ID
A
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
130
EAS
PD
181
mJ
W
TC = 25°C
TA = 25°C
50
Power Dissipation
(Note 1a)
2.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.5
53
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
FDMC035N10
FDMC035N10X1
Power 33
Semiconductor Components Industries, LLC, 2017
May, 2017, Rev. 1.0
Publication Order Number:
FDMC035N10X1
1
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25°C
107
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
2.0
2.5
-7
4.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25°C
GS = 10 V, ID = 5.5 A
mV/°C
V
30
32
60
18
37
41
75
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 6 V, ID = 5.0 A
mΩ
VGS = 10 V, ID = 5.5 A, TJ = 125°C
VDS = 5 V, ID = 5.5 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1910
109
64
2675
5.2
pF
pF
pF
Ω
VDS = 50 V, VGS = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.1
2.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
12
7
21
13
90
25
58
38
ns
ns
VDD = 50 V, ID = 5.5 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
56
14
41
27
6.3
11
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 6 V
nC
nC
nC
nC
Qg
VDD = 50 V,
D = 5.5 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
VSD
trr
Source-Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 5.5 A
(Note 2)
0.8
42
58
1.3
68
92
V
ns
nC
IF = 5.5 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
Notes:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
b)
125°C/W when mounted on a
minimum pad
a)
53°C/W when mounted on a
1 in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. E of 181 mJ is based on starting T = 25 °C; N-ch: L = 3 mH, I = 11 A, V = 100 V, V = 10 V. 100% test at L = 0.1 mH, I = 35 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
www.onsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted.
40
3
2
1
0
VGS = 10 V
VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5 V
VGS = 4 V
30
VGS = 4.5 V
VGS = 4 V
20
VGS = 10 V
VGS = 6 V
VGS = 5 V
VGS = 4.5 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
8
16
24
32
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
2.4
200
ID = 5.5 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10 V
ID = 5.5 A
150
100
50
TJ = 125 o
C
TJ = 25 o
C
0
-75 -50 -25
0
25 50 75 100 125 150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
40
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
10
32
VDS = 5 V
TJ = 150 o
C
TJ = 150 o
C
1
24
16
8
TJ = 25 oC
0.1
TJ = 25 o
C
TJ = -55 o
C
0.01
TJ = -55 o
C
0
2.0
0.001
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
10000
1000
100
ID = 5.5 A
Ciss
8
VDD = 50 V
6
VDD = 25 V
VDD = 75 V
Coss
4
2
0
Crss
f = 1 MHz
GS = 0 V
V
10
0.1
0
10
20
30
40
50
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
4
3
2
1
0
100
VGS = 10 V
VGS = 6 V
TJ = 25 oC
TJ = 100 o
C
10
TJ = 125 o
C
RθJA = 125 oC/W
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Case Temperature
100000
1000
100
10
SINGLE PULSE
RθJA = 125 oC/W
CURVE BENT TO
MEASURED DATA
10000
1000
100
10
10 μs
T
A = 25 o
C
THIS AREA IS
LIMITED BY rDS(on)
100 μs
300 μs
1 ms
1
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
10 ms
60 ms
100 ms
0.1
0.01
1
1 s
T
A = 25 oC
DC
0.1
10-5 10-4 10-3 10-2 10-1
1
10
100 1000
0.01
0.1
1
10
100
600
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
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4
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
0.01
t
1
t
2
0.001
NOTES:
(t) = r(t) x R
Z
θJA
θJA
o
R
= 125 C/W
θJA
SINGLE PULSE
0.0001
Peak T = P
x Z (t) + T
J
DM
θJA A
Duty Cycle, D = t / t
1
2
0.00001
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
10-1
1
10
100
1000
Figure 13. Junction to Ambient Transient Thermal Response Curve
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5
Dimensional Outline and Pad Layout
2.37 MIN
SYM
3.40
A
3.20
PKG
C
L
C
L
8
5
(0.45)
B
8
5
2.15 MIN
0.70 MIN
(0.40)
(0.65)
PKG
3.40
3.20
PKG C
L
C
L
1
4
1
4
PIN 1
INDICATOR
0.42 MIN
(8X)
0.65
1.95
SEE
DETAIL A
LAND PATTERN
RECOMMENDATION
0.10 C
1.95
0.10 C A B
0.37
(8X)
0.27
0.65
0.80
0.70
0.60
0.40
1
4
0.08 C
0.05
0.00
C
0.25
0.15
SEATING
PLANE
PKG C
L
DETAIL A
SCALE: 2X
1.99
1.79
NOTES: UNLESS OTHERWISE SPECIFIED
8
5
(0.34)
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. BA,
(0.33) TYP
(0.52 TYP)
(2.27)
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) DRAWING FILE NAME: MKT-PQFN08SREV1
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other
countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON
Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is
subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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