首页 |元器件品牌

FDMC8026S [ONSEMI]

30V N沟道PowerTrench® SyncFET™;
FDMC8026S
型号： FDMC8026S
厂家： ONSEMI    ONSEMI
描述：

30V N沟道PowerTrench® SyncFET™

开关 脉冲 光电二极管 晶体管
文件： 总9页 (文件大小：406K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Is Now Part of  
To learn more about ON Semiconductor, please visit our website at  
www.onsemi.com  
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON  
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON  
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA  
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended  
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out  
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor  
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
June 2014  
FDMC8026S  
N-Channel PowerTrench® SyncFETTM  
30 V, 21 A, 4.4 mΩ  
Features  
General Description  
The FDMC8026S has been designed to minimize losses in  
power conversion application. Advancements in both silicon and  
package technologies have been combined to offer the lowest  
rDS(on) while maintaining excellent switching performance.This  
device has the added benefit of an efficient monolithic schottky  
body diode.  
„ Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A  
„ Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A  
„ Advanced package and silicon combination for low rDS(on) and  
high efficiency  
„ SyncFET Schottky Body Diode  
„ MSL1 robust package design  
„ 100% UIL tested  
Applications  
„ Synchronous Rectifier for DC/DC Converters  
„ Notebook Vcore/GPU low side switch  
„ Networking Point of Load low side switch  
„ Telecom secondary side rectification  
„ RoHS Compliant  
Top  
Bottom  
Pin 1  
S
S
D
D
S
S
S
G
S
D
D
D
G
D
D
D
MLP 3.3x3.3  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Continuous  
30  
V
V
(Note 4)  
(Note 1a)  
(Note 3)  
±20  
TC = 25°C  
TA = 25°C  
21  
ID  
19  
100  
A
-Pulsed  
EAS  
Single Pulse Avalance Energy  
Power Dissipation  
66  
mJ  
W
TC = 25°C  
TA = 25°C  
36  
PD  
Power Dissipation  
(Note 1a)  
2.4  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
3.4  
53  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
FDMC8026S  
FDMC8026S  
MLP 3.3X3.3  
3000 units  
©2013 Fairchild Semiconductor Corporation  
FDMC8026S Rev.C7  
www.fairchildsemi.com  
1
Electrical Characteristics TJ = 25 °C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
Drain to Source Breakdown Voltage  
ID = 1 mA, VGS = 0 V  
30  
V
ΔBVDSS  
ΔTJ  
Breakdown Voltage Temperature  
Coefficient  
I
D = 10 mA, referenced to 25 °C  
26  
mV/°C  
IDSS  
IGSS  
Zero Gate Voltage Drain Current  
VDS = 24 V, VGS = 0 V  
500  
100  
μA  
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V  
nA  
On Characteristics  
VGS(th)  
Gate to Source Threshold Voltage  
VGS = VDS, ID = 1 mA  
D = 10 mA, referenced to 25 °C  
VGS = 10 V, ID = 19 A  
GS = 4.5 V, ID = 17.5 A  
1.2  
1.6  
-5  
3.0  
V
ΔVGS(th)  
ΔTJ  
Gate to Source Threshold Voltage  
Temperature Coefficient  
I
mV/°C  
3.8  
4.5  
4.4  
5.2  
V
rDS(on)  
Static Drain to Source On Resistance  
Forward Transconductance  
mΩ  
VGS = 10 V, ID = 19 A,  
TJ = 125 °C  
4.5  
5.8  
gFS  
VDS = 5 V, ID = 19 A  
106  
S
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
2380  
885  
100  
0.7  
3165  
1175  
150  
pF  
pF  
pF  
Ω
VDS = 15 V, VGS = 0 V,  
f = 1 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
0.1  
2.5  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Rise Time  
11  
5
20  
10  
48  
10  
52  
25  
ns  
ns  
VDD = 15 V, ID = 19 A,  
V
GS = 10 V, RGEN = 6 Ω  
Turn-Off Delay Time  
Fall Time  
30  
4
ns  
ns  
Qg  
Total Gate Charge  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
VGS = 0 V to 10 V  
VGS = 0 V to 4.5 V  
37  
18  
6
nC  
nC  
nC  
nC  
Qg  
VDD = 15 V,  
D = 19 A  
I
Qgs  
Qgd  
6
Drain-Source Diode Characteristics  
V
GS = 0 V, IS = 2 A  
(Note 2)  
(Note 2)  
0.6  
0.8  
29  
0.8  
1.2  
47  
VSD  
Source to Drain Diode Forward Voltage  
V
VGS = 0 V, IS = 19 A  
trr  
Reverse Recovery Time  
ns  
IF = 19 A, di/dt = 300 A/μs  
Qrr  
Reverse Recovery Charge  
33  
53  
nC  
Notes:  
2
1. R  
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R  
is guaranteed by design while R is determined by  
θCA  
θJA  
θJC  
the user's board design.  
a. 53 °C/W when mounted on a  
b. 125 °C/W when mounted on a  
minimum pad of 2 oz copper.  
2
1 in pad of 2 oz copper.  
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.  
3. E of 66 mJ is based on starting T = 25 °C, L = 0.3 mH, I = 21 A, V = 27 V, V = 10 V. 100% tested at L = 3 mH, I = 10.2 A.  
AS  
J
AS  
DD  
GS  
AS  
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.  
©2013 Fairchild Semiconductor Corporation  
FDMC8026S Rev.C7  
www.fairchildsemi.com  
2
Typical Characteristics TJ = 25 °C unless otherwise noted  
100  
5
4
3
2
1
0
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
VGS = 10 V  
VGS = 6 V  
80  
VGS = 4.5 V  
VGS = 3 V  
VGS = 4 V  
60  
VGS = 3.5 V  
VGS = 3 V  
VGS = 3.5 V  
40  
20  
PULSE DURATION = 80 μs  
VGS = 10 V  
80  
VGS = 4.5 V VGS = 6 V  
VGS = 4 V  
20  
DUTY CYCLE = 0.5% MAX  
0
0.0  
0.5  
1.0  
1.5  
2.0  
0
40  
60  
100  
ID, DRAIN CURRENT (A)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 1. On Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs. Drain Current and Gate Voltage  
1.6  
12  
ID = 19 A  
GS = 10 V  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
V
ID = 19 A  
1.4  
1.2  
1.0  
0.8  
0.6  
9
6
3
0
TJ = 125 o  
C
TJ = 25 o  
C
2
4
6
8
10  
-75 -50 -25  
0
25 50 75 100 125 150  
TJ, JUNCTION TEMPERATURE (oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Figure4. On-Resistance vs. Gate to  
Source Voltage  
Figure 3. Normalized On Resistance  
vs. Junction Temperature  
100  
100  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
VGS = 0 V  
80  
60  
40  
20  
0
VDS = 5 V  
TJ = 125 o  
C
TJ = 125 o  
C
10  
1
TJ = 25 oC  
TJ = 25 o  
C
TJ = -55 o  
C
TJ = -55 o  
C
0.1  
0.0  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VGS, GATE TO SOURCE VOLTAGE (V)  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs. Source Current  
©2013 Fairchild Semiconductor Corporation  
FDMC8026S Rev.C7  
www.fairchildsemi.com  
3
Typical Characteristics TJ = 25 °C unless otherwise noted  
10  
5000  
1000  
ID = 19 A  
8
Ciss  
VDD = 15 V  
VDD = 10 V  
6
4
2
0
Coss  
VDD = 20 V  
Crss  
100  
50  
f = 1 MHz  
= 0 V  
V
GS  
30  
0
8
16  
24  
32  
40  
0.1  
1
10  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Qg, GATE CHARGE (nC)  
Figure 7. Gate Charge Characteristics  
Figure8. C a p a c i t a n c e v s . D r a i n  
to Source Voltage  
80  
60  
40  
20  
0
30  
VGS = 10 V  
TJ = 25 oC  
10  
TJ = 100 oC  
VGS = 4.5 V  
TJ = 125 o  
C
R
θJC = 3.4 oC/W  
Limited by Package  
1
25  
50  
75  
100  
125  
150  
0.001  
0.01  
0.1  
1
10  
100  
TC, CASE TEMPERATURE (oC)  
tAV, TIME IN AVALANCHE (ms)  
Figure9. U n c l a m p e d I n d u c t i v e  
Switching Capability  
Figure10.M a x i m u m C o n t i n u o u s D r a i n  
Current vs. Case Temperature  
200  
100  
1000  
100 μs  
10  
1
100  
10  
1 ms  
10 ms  
100 ms  
1 s  
THIS AREA IS  
LIMITED BY rDS(on)  
SINGLE PULSE  
TJ = MAX RATED  
RθJA = 125oC/W  
SINGLE PULSE  
θJA = 125 oC/W  
0.1  
10 s  
DC  
R
T
A = 25 oC  
T
A = 25 oC  
1
0.01  
0.5  
10-4  
10-3  
10-2  
t, PULSE WIDTH (sec)  
10-1  
1
10  
0.01  
0.1  
1
10  
100200  
100 1000  
VDS, DRAIN to SOURCE VOLTAGE (V)  
Figure12. Single Pulse Maximum  
Power Dissipation  
Figure 11. Forward Bias Safe  
Operating Area  
©2013 Fairchild Semiconductor Corporation  
FDMC8026S Rev.C7  
www.fairchildsemi.com  
4
Typical Characteristics TJ = 25 °C unless otherwise noted  
2
1
DUTY CYCLE-DESCENDING ORDER  
D = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
P
DM  
0.01  
t
1
t
2
SINGLE PULSE  
NOTES:  
DUTY FACTOR: D = t /t  
0.001  
0.0001  
R
θJA = 125 oC/W  
1
2
PEAK T = P  
J
x Z  
x R  
+ T  
DM  
θJA  
θJA A  
(Note 1b)  
10-4  
10-3  
10-2  
10-1  
t, RECTANGULAR PULSE DURATION (sec)  
1
10  
100  
1000  
Figure 13. Junction-to-Ambient Transient Thermal Response Curve  
©2013 Fairchild Semiconductor Corporation  
FDMC8026S Rev.C7  
www.fairchildsemi.com  
5
Typical Characteristics (continued)  
TM  
SyncFET Schottky body diode  
Characteristics  
Fairchild’s SyncFETTM process embeds a Schottky diode in  
parallel with PowerTrench MOSFET. This diode exhibits similar  
characteristics to a discrete external Schottky diode in parallel  
Schottky barrier diodes exhibit significant leakage at high tem-  
perature and high reverse voltage. This will increase the power  
in the device.  
with  
a MOSFET. Figure 14 shows the reverse recovery  
characteristic of the FDMC8026S.  
25  
20  
15  
10  
0.01  
TJ = 125 o  
C
0.001  
0.0001  
TJ = 100 o  
C
di/dt = 300 A/μs  
5
0
0.00001  
0.000001  
TJ = 25 o  
C
-5  
0
50  
100  
TIME (ns)  
150  
200  
250  
0
5
10  
15  
20  
25  
30  
VDS, REVERSE VOLTAGE (V)  
Figure 14. FDMC8026S SyncFETTM Body  
Diode Reverse Recovery Characteristic  
Figure 15. SyncFETTM Body Diode Re-  
verse Leakage vs. Drain-Source Voltage  
©2013 Fairchild Semiconductor Corporation  
FDMC8026S Rev.C7  
www.fairchildsemi.com  
6
(3.40)  
2.37  
0.05 C  
B
3.30  
A
8
5
2X  
0.45(4X)  
(0.40)  
2.15  
(1.70)  
3.30  
KEEP OUT  
AREA  
(0.65)  
0.70(4X)  
0.05 C  
PIN#1 IDENT  
1
4
TOP VIEW  
SIDE VIEW  
0.65  
0.42(8X)  
2X  
1.95  
ꢀꢁꢅꢃ“ꢀꢁꢀꢃ  
RECOMMENDED LAND PATTERN  
0.10 C  
0.08 C  
ꢀꢁꢂꢃ“ꢀꢁꢀꢃ  
ꢀꢁꢀꢄꢃ“ꢀꢁꢀꢄꢃ  
NOTES:  
C
SEATING  
A. DOES NOT CONFORM TO JEDEC  
REGISTRATION MO-229  
PLANE  
B. DIMENSIONS ARE IN MILLIMETERS.  
ꢆꢁꢆꢀ“ꢀꢁꢀꢃ  
C. DIMENSIONS AND TOLERANCES PER  
ASME Y14.5M, 2009.  
2.27+0.05  
(0.50)4X  
PIN #1 IDENT  
(0.79)  
D. LAND PATTERN RECOMMENDATION IS  
EXISTING INDUSTRY LAND PATTERN.  
1
4
ꢀꢁꢃꢀ“ꢀꢁꢀꢃꢇꢊ;ꢉ  
E. DRAWING FILENAME: MKT-MLP08Srev3.  
(0.35)  
(1.15)  
ꢆꢁꢆꢀ“ꢀꢁꢀꢃ  
R0.15  
ꢄꢁꢀꢀ“ꢀꢁꢀꢃ  
ꢀꢁꢆꢀ“ꢀꢁꢀꢃꢇꢆ;ꢉ  
8
5
ꢀꢁꢆꢃ“ꢀꢁꢀꢃꢇꢈ;ꢉ  
0.65  
0.10  
C A B  
1.95  
0.05  
C
BOTTOM VIEW  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
© Semiconductor Components Industries, LLC  
www.onsemi.com  

相关型号：

FDMC8030

 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ
FAIRCHILD

FDMC8030

 双 N 沟道，Power Trench® MOSFET，40V，12A，10mΩ
ONSEMI

FDMC8032L

 双 N 沟道 PowerTrench® MOSFET 40V，7A，20mΩ
ONSEMI

FDMC8097AC

 双 N 和 P 沟道 PowerTrench® MOSFET 150V
ONSEMI

FDMC8200

 Dual N-Channel PowerTrench? MOSFET 30 V, 9.5 mΩ and 20 mΩ
FAIRCHILD

FDMC8200

 双 N 沟道，PowerTrench® MOSFET，30V，9.5mΩ 和 20mΩ
ONSEMI

FDMC8200S

 暂无描述
FAIRCHILD

FDMC8200S

 双 N 沟道，PowerTrench® MOSFET，30V，10mΩ，20mΩ
ONSEMI

FDMC8296

 N-Channel Power Trench㈢ MOSFET 30V, 18A, 8.0mヘ
FAIRCHILD

FDMC8296

 N 沟道，Power Trench® MOSFET，30V，18A，8.0mΩ
ONSEMI

FDMC8296_10

 N-Channel Power Trench® MOSFET 30V, 18A, 8.0m
FAIRCHILD

FDMC8321L

 Power Field-Effect Transistor, 22A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA, ROHS COMPLIANT, POWER 33, 8 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明