FDMD8530 [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，30V，201A，1.25mΩ;
| 型号： | FDMD8530 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，30V，201A，1.25mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：710K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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October 2015
FDMD8530
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 201 A, 1.25 mΩ Q2: 30 V, 201 A, 1.25 mΩ
Features
General Description
Q1: N-Channel
This device includes two 30V N-Channel MOSFETs in a dual
power (5 mm X 6 mm) package. HS source and LS drain
internally connected for half/full bridge, low source inductance
package, low rDS(on)/Qg FOM silicon.
Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 35 A
Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 32 A
Q2: N-Channel
Applications
Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 35 A
POL Synchronous Dual
Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 32 A
One Phase Motor Half Bridge
Half/Full Bridge Secondary Synchronous Rectification
Ideal for Flexible Layout in Primary Side of Bridge Topology
100% UIL Tested
Kelvin High Side MOSFET Drive Pin-out Capability
RoHS Compliant
Bottom
Top
D2/S1
D2/S1
G1
G2
Pin 1
D2/S1
G2
S2
GR
D1
D2/S1
D2/S1
D2/S1
D1
D1
D1
D1
GR
Pin 1
G1
Power 5 x 6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Q1
30
Q2
30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±20
201
127
351a
1047
661
78
±20
201
127
351b
1047
661
78
TC = 25 °C
TC = 100 °C
TA = 25 °C
(Note 5)
(Note 5)
ID
A
Drain Current -Continuous
-Pulsed
(Note 4)
(Note 3)
EAS
Single Pulse Avalanche Energy
Power Dissipation
mJ
W
TC = 25 °C
TA = 25 °C
PD
Power Dissipation
2.21a
2.21b
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.6
551a
1.6
55 1b
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
Quantity
3000 units
FDMD8530
FDMD8530
Power 5 x 6
12 mm
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max. Units
Off Characteristics
Q1
Q2
30
30
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
V
ΔBVDSS Breakdown Voltage Temperature
Q1
Q2
20
20
I
D = 250 μA, referenced to 25 °C
mV/°C
ΔTJ
IDSS
Coefficient
Q1
Q2
1
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
μA
1
Q1
Q2
±100
nA
IGSS
Gate to Source Leakage Current
±100
On Characteristics
Q1
Q2
1.0
1.0
1.5
1.5
3.0
V
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
3.0
ΔVGS(th) Gate to Source Threshold Voltage
Q1
Q2
-5
-5
I
D = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 35 A
GS = 4.5 V, ID = 32 A
mV/°C
ΔTJ
Temperature Coefficient
0.77
0.96
1.1
1.25
1.5
V
Q1
Q2
VGS = 10 V, ID = 35 A, TJ = 125 °C
VGS = 10 V, ID = 35 A
1.8
1.25
1.5
mΩ
rDS(on)
Static Drain to Source On Resistance
0.77
0.96
1.1
VGS = 4.5 V, ID = 32 A
VGS = 10 V, ID = 35 A, TJ = 125 °C
1.8
Q1
Q2
259
259
gFS
Forward Transconductance
VDD = 5 V, ID = 35 A
S
Dynamic Characteristics
Q1
Q2
7425 10395
7425 10395
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
Ω
V
DS = 15 V, VGS = 0 V
Q1
Q2
2190 3070
2190 3070
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1 MHz
Q1
Q2
220
220
310
310
Q1
Q2
0.1
0.1
1.9
1.9
3.8
3.8
Switching Characteristics
Q1
Q2
14
14
25
25
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ns
ns
Q1
Q2
13
13
24
24
VDD = 15 V, ID = 35 A
V
GS = 10 V, RGEN = 6 Ω
Q1
Q2
71
71
114
114
Turn-Off Delay Time
Fall Time
ns
Q1
Q2
21
21
34
34
ns
Q1
Q2
106
106
149
149
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
nC
nC
nC
nC
Q1
Q2
50
50
70
70
V
DD = 15 V,
Q1
Q2
16
16
I
D =35 A
Q1
Q2
13
13
Qgd
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
2
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
Q1
Q2
0.8
0.8
1.3
1.3
VSD
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 35 A
(Note 2)
(Note 2)
V
V
Q1
Q2
0.7
0.7
1.2
1.2
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A
Reverse Recovery Time
Q1
Q2
54
54
87
87
ns
nC
IF = 35 A, di/dt = 100 A/μs
Q1
Q2
39
39
63
63
Qrr
Reverse Recovery Charge
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is determined by the user's board design.
θJA
θCA
a. 55 °C/W when mounted on
a 1 in padof 2oz copper
b. 55 °C/W when mounted on
a 1 in padof 2oz copper
2
2
c. 155 °C/W when mounted on
a minimum pad of 2 oz copper
d. 155 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
o
3. Q1: E of 661 mJ is based on starting T = 25 C, L = 3 mH, I = 21 A, V = 30 V, V = 10 V. 100% tested at L = 0.1 mH, I = 65 A.
AS
J
AS
DD
GS
AS
o
Q2: E of 661 mJ is based on starting T = 25 C, L = 3 mH, I = 21 A, V = 30 V, V = 10 V. 100% tested at L = 0.1 mH, I = 65 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
3
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
20
15
10
5
150
120
90
60
30
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 3 V
VGS = 3.5 V
VGS = 2.5 V
VGS = 4.5 V
VGS = 10 V
0
0
30
60
90
120
150
0.0
0.2
0.4
0.6
0.8
1.0
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
1.6
5
ID = 35 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
VGS = 10 V
4
3
2
1
0
ID = 35 A
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
150
200
100
VGS = 0 V
TJ = 150 o
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
90
60
30
0
10
C
VDS = 5 V
TJ = 150 o
C
1
TJ = 25 o
C
TJ = 25 o
C
0.1
TJ = -55 o
C
0.01
TJ = -55 o
C
0.001
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
4
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
10
8
10000
1000
100
ID = 35 A
Ciss
VDD = 15 V
6
Coss
VDD = 10 V
VDD = 20 V
4
2
f = 1 MHz
GS = 0 V
V
Crss
0
0
22
44
66
88
110
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
210
180
150
120
90
100
TJ = 25 oC
TJ = 100 o
VGS = 10 V
C
10
VGS = 4.5 V
TJ = 125 o
C
60
30
RθJC = 1.6 oC/W
0
25
1
0.001
0.01
0.1
1
10
100
1000
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs. Case Temperature
2000
1000
100000
SINGLE PULSE
RθJC = 1.6 oC/W
10 μs
T
C = 25 oC
10000
1000
100
100
10
1
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.6 oC/W
10 ms
100 ms/DC
CURVE BENT TO
MEASURED DATA
T
C = 25 oC
0.1
0.1
10
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum Power
Dissipation
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
5
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted.
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
t
1
t
2
NOTES:
(t) = r(t) x R
0.01
0.001
SINGLE PULSE
Z
θJC
θJC
o
R
= 1.6 C/W
θJC
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
6
www.fairchildsemi.com
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
20
15
10
5
150
120
90
60
30
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 3 V
VGS = 3.5 V
VGS = 2.5 V
VGS = 4.5 V
VGS = 10 V
0
0
30
60
90
120
150
0.0
0.2
0.4
0.6
0.8
1.0
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On- Region Characteristics
Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
5
1.6
ID = 35 A
PULSE DURATION = 80 μs
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
DUTY CYCLE = 0.5% MAX
VGS = 10 V
4
ID = 35 A
3
2
TJ = 125 o
C
1
0
TJ = 25 o
C
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs. Gate to
Source Voltage
Figure 16. Normalized On-Resistance
vs. Junction Temperature
150
200
100
VGS = 0 V
TJ = 150 o
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
120
90
60
30
0
10
C
VDS = 5 V
TJ = 150 o
C
1
TJ = 25 o
C
TJ = 25 o
C
0.1
TJ = -55 o
C
0.01
0.001
TJ = -55 o
C
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
7
www.fairchildsemi.com
Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted.
10000
1000
100
10
8
ID = 35 A
Ciss
VDD = 15 V
6
Coss
VDD = 10 V
VDD = 20 V
4
2
f = 1 MHz
VGS = 0 V
Crss
0
0.1
1
10
30
0
22
44
66
88
110
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 21. Capacitance vs. Drain
to Source Voltage
Figure 20. Gate Charge Characteristics
210
180
150
120
90
100
10
1
TJ = 25 o
C
VGS = 10 V
TJ = 100 o
C
VGS = 4.5 V
TJ = 125 o
C
60
30
RθJC = 1.6 oC/W
0
25
0.001
0.01
0.1
1
10
100
1000
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure 22. Unclamped Inductive
Switching Capability
F ig ure 23 . Ma ximum C on tin uo us D rain
Current vs. Case Temperature
2000
1000
100000
10000
1000
100
SINGLE PULSE
RθJC = 1.6 oC/W
TC = 25 o
10 μs
C
100
10
1
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.6 oC/W
10 ms
100 ms/DC
CURVE BENT TO
MEASURED DATA
TC = 25 o
C
0.1
0.1
10
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe
Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
8
www.fairchildsemi.com
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted.
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
(t) = r(t) x R
0.01
0.001
SINGLE PULSE
Z
θJC
θJC
o
R
= 1.6 C/W
θJC
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 26. Junction-to-Case Transient Thermal Response Curve
©2015 Fairchild Semiconductor Corporation
FDMD8530 Rev.1.0
9
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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FAIRCHILD
FDME1034CZT
Complementary PowerTrench® MOSFET N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ
FAIRCHILD
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