FDMQ8203 [ONSEMI]
双 N 沟道和双 P 沟道，PowerTrench® MOSFET，GreenBridge™ 系列高效桥式整流器;
| 型号： | FDMQ8203 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道和双 P 沟道，PowerTrench® MOSFET，GreenBridge™ 系列高效桥式整流器 PC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Dual N-Channel
and Dual P-Channel,
POWERTRENCH),
GreenBridgetSeries of
High-Efficiency Bridge
Rectifiers
Top
Bottom
Pin 1
G4
S4
S4
G3
S3
S3
G1
D1/
D2
D3/
D4
S1
S1
G2
S2
S2
D3/ D1/
D4 D2
WDFN12 5x4.5, 0.8P
CASE 511CS
MARKING DIAGRAM
N-Channel: 100 V, 6 A, 110 mW
P-Channel: -80 V, -6 A, 190 mW
ZXYKK
FDMQ
8203
FDMQ8203
General Description
This quad mosfet solution provides ten−fold improvement in power
dissipation over diode bridge.
FDMQ8203 = Specific Device Code
Z
XY
KK
= Assembly Plant Code
= Date Code
Features
= Lot Run Traceability Code
• Q1/Q4: N−Channel
♦ Max R
♦ Max R
= 110 mΩ at V = 10 V, I = 3 A
GS D
DS(on)
N−Channel / P−Channel
= 175 mΩ at V = 6 V, I = 2.4 A
DS(on)
GS
D
• Q2/Q3: P−Channel
6
7
8
S3
S3
G3
S4
S2
♦ Max R
♦ Max R
= 190 mΩ at V = −10 V, I = −2.3 A
GS D
Q3 (Pch)
Q2 (Pch)
DS(on)
= 235 mΩ at V = −4.5 V, I = −2.1 A
DS(on)
GS
D
5
4
3
2
S2
G2
S1
S1
9
Applications
Q4 (Nch)
Q1 (Nch)
10
• High−Efficiency Bridge Rectifiers
S4 11
G4 12
• Substantial Efficiency Benefit in PD Solutions
G1
1
• These Device is Pb−Free, Halide Free and is RoHS Compliant
D1,D2 to backside
D3,D4 to backside
(isolated from D1,D2)
ORDERING INFORMATION
†
Shipping
Device
Package
FDMQ8203
3000 /
MLP 4.5x5
(Pb−Free,
Tape & Reel
Halide Free)
†For information on tape and reel specifications, in-
cluding part orientation and tape sizes, please refer
to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
August 2022 − Rev.4
FDMQ8203/D
FDMQ8203
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Q1/Q4
100
20
Q2/Q3
−80
20
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
I
D
− Continuous (Package Limited) T = 25°C
6
−6
A
C
− Continuous (Silicon Limited)
− Continuous
T
= 25°C
10
−10
−2.6
−10
37
C
T = 25°C (Note 1a)
A
3.4
12
− Pulsed
P
Power Dissipation for Single Operation
Power Dissipation for Dual Operation
T
= 25°C
22
W
D
C
T = 25°C (Note 1a)
A
2.5
−55 to +150
T , T
Operating and Storage Junction Temperature Range
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
50
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
°C/W
R
R
θ
θ
JA
JA
160
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown
Voltage
I
D
I
D
= 250 mA, V = 0
Q1/Q4
Q2/Q3
100
−80
−
−
−
−
V
DSS
GS
= −250 mA, V = 0
GS
Breakdown Voltage
Temperature Coefficient
I = 250 mA, Referenced to 25_C
Q1/Q4
Q2/Q3
−
−
72
−79
−
−
mV/_C
D
DBVDSS
DTJ
I = −250 mA, Referenced to 25_C
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
Q1/Q4
Q2/Q3
−
−
−
−
1
mA
DSS
DS
DS
GS
= −64 V, V = 0 V
−1
GS
I
V
GS
=
20 V, V = 0 V
Q1/Q4
Q2/Q3
−
−
−
−
100
100
nA
GSS
DS
ON CHARACTERISTICS (Note 2)
Gate to Source Threshold Voltage
V
V
GS
V
GS
= V , I = 250 mA
Q1/Q4
Q2/Q3
2
−1
3
−1.6
4
−3
V
GS(th)
DS
D
= V , I = −250 mA
DS
D
Gate to Source Threshold Voltage I = 250 mA, Referenced to 25_C
Q1/Q4
Q2/Q3
−
−
−8
5
−
−
mV/_C
DVGS(th)
DTJ
D
Temperature Coefficient
I = −250 mA, Referenced to 25_C
D
R
Static Drain−Source
On−Resistance
V
V
V
= 10 V, I = 3 A
Q1/Q4
−
−
−
85
118
147
110
175
191
mW
DS(on)
GS
GS
GS
D
= 6 V, I = 2.4 A
D
= 10 V, I = 3 A, T = 125_C
D
J
V
GS
V
GS
V
GS
= −10 V, I = −2.3 A
Q2/Q3
−
−
−
161
188
273
190
235
323
D
= −4.5 V, I = −2.1 A
D
= −10 V, I = −2.3 A, T = 125_C
D
J
g
FS
Forward Transconductance
V
DS
V
DS
= 10 V, I = 3 A
Q1/Q4
Q2/Q3
−
−
6
6
−
−
S
D
= −10 V, I = −2.3 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1/Q4
= 50 V, V = 0 V, f = 1.0 MHz
Q1/Q4
Q2/Q3
−
−
158
639
210
850
pF
pF
pF
iss
V
DD
GS
C
Output Capacitance
Q1/Q4
Q2/Q3
−
−
41
46
55
65
oss
Q2/Q3
V
DS
= −40 V, V = 0 V, f = 1.0 MHz
GS
C
Reverse Transfer Capacitance
Q1/Q4
Q2/Q3
−
−
2.6
24
5
40
rss
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2
FDMQ8203
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Type
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Rise Time
Q1/Q4
Q1/Q4
Q2/Q3
−
−
3.8
4.7
10
10
ns
ns
ns
ns
nC
d(on)
V
DD
V
GS
= 50 V, I = 3 A,
D
= 10 V, R
= 6 W
GEN
t
r
Q1/Q4
Q2/Q3
−
−
1.3
2.8
10
10
Q2/Q3
V
DD
V
GS
= −40 V, I = −2.3 A,
= −10 V, R
D
GEN
t
Turn–Off Delay Time
Fall Time
Q1/Q4
Q2/Q3
−
−
7.5
22
15
35
d(off)
= 6 W
t
f
Q1/Q4
Q2/Q3
−
−
1.9
2.7
10
10
Q
Q
Total Gate Charge
V
GS
V
GS
= 0 V to 10 V
= 0 V to −10 V
Q1/Q4:
= 50 V,
Q1/Q4
Q2/Q3
−
−
2.9
13
5
19
g
g
V
DD
D
I
= 3 A
Total Gate Charge
V
GS
V
GS
= 0 V to 5 V
= 0 V to −4.5 V
Q1/Q4
Q2/Q3
−
−
1.6
6.4
3
10
nC
nC
nC
Q2/Q3
= −40 V,
V
DD
I
= −2.3 A
D
Q
Gate–Source Gate Charge
Gate to Drain Miller" Charge
Q1/Q4
Q2/Q3
−
−
0.8
1.6
−
−
gs
Q
Q1/Q4
Q2/Q3
−
−
0.8
2.6
−
−
gd
DRAIN–SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drine Diode
Forward Voltage
V
GS
V
GS
= 0 V, I = 3 A
(Note 2) Q1/Q4
(Note 2) Q2/Q3
−
−
0.86
−0.82
1.3
−1.3
V
S
= 0 V, I = −2.3 A
S
t
Reverse Recovery Time
Q1/Q4:
Q1/Q4
Q2/Q3
−
−
32
26
52
42
ns
rr
I = 3 A, di/dt = 100 A/ms
F
Q2/Q3:
Q
Reverse Recovery Charge
Q1/Q4
Q2/Q3
−
−
21
26
34
42
nC
I = −2.3 A, di/dt = 100 A/ms
rr
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
b) 160°C/W when mounted on
a minimum pad of 2 oz copper,
the board designed Q1+Q3 or
Q2+Q4.
a) 50°C/W when mounted on a
2
1 in pad of 2 oz copper, the
board designed Q1+Q3 or
Q2+Q4.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
FDMQ8203
TYPICAL CHARACTERISTICS (N−CHANNEL) (T = 25°C unless otherwise noted)
J
12
9
5
PULSE DURATION = 80 μs
V
= 10 V
= 8 V
GS
V
GS
= 5 V
DUTY CYCLE = 0.5% MAX
V
GS
= 7 V
V
GS
= 6 V
V
4
GS
V
GS
= 6 V
3
2
6
V
GS
= 5 V
V
GS
= 7 V
3
0
1
0
PULSE DURATION = 80 μs
V
GS
= 10 V
DUTY CYCLE = 0.5% MAX
V
I
= 8 V
GS
1
5
4
3
0
6
9
2
0
12
3
DRAIN CURRENT (A)
V
, DRAIN TO SOURCE VOLTAGE (V)
D,
DS
Figure 2. Normalized On−Resistance vs
Figure 1. On Region Characteristics
Drain Current and Gate Voltage
400
2.0
1.8
1.6
1.4
I
V
= 3 A
D
PULSE DURATION = 80 μs
I
D
= 3 A
= −10 V
GS
DUTY CYCLE = 0.5% MAX
300
200
T = 125°C
J
1.2
T = 25°C
J
1.0
0.8
100
0
0.6
−25
T , JUNCTION TEMPERATURE (°C)
125 150
100
−75 −50
0
25
75
6
8
9
50
7
4
5
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
J
Figure 3. Normalized On Resistance vs
Junction Temperature
Figure 4. On−Resistance vs Gate to Source
Voltage
12
20
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
9
6
3
0
T = 150°C
J
V
DS
= 5 V
1
T = 25°C
J
0.1
T = 150°C
J
T = 25°C
J
T = −55°C
J
0.01
T = −55°C
J
0.001
7
2
6
1.0
0.4
5
0.2
0.6
0.8
1.2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
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4
FDMQ8203
TYPICAL CHARACTERISTICS (N−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
1000
10
8
I
D
= 3 A
C
ISS
V
DD
= 25 V
100
10
1
V
= 50 V
DD
6
4
V
= 75 V
DD
C
OSS
RSS
2
0
F = 1 Mhz
V
GS
= 0 V
C
0.1
2.5
1
0
1.0
1.5
2.0
3.0
100
0.5
10
Q , GATE CHARGE (°C)
G
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source
Voltage
20
10
1 ms
1
10 ms
THIS AREA IS
LIMITED BY R
100 ms
1 s
0.1
DS(on)
SINGLE PULSE
T = MAX RATED
J
R
= 160°C/W
10 s
DC
θ
JA
0.01
T = 25°C
A
0.005
1
10
0.1
100
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area
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5
FDMQ8203
TYPICAL CHARACTERISTICS (P−CHANNEL) (T = 25°C unless otherwise noted)
J
10
8
4
V
= −10 V
GS
V
= −3 V
V
GS
= −2.5 V
GS
V
= −4.5 V
V
= −3.5 V
GS
GS
3
2
V
GS
= −3.5 V
6
V
= −3 V
GS
V
GS
= −4.5 V
4
PULSE DURATION = 80 μs
1
0
DUTY CYCLE = 0.5% MAX
V
GS
= −10 V
2
0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
= −2.5 V
GS
2
4
5
1
3
0
2
0
4
8
6
10
−I DRAIN CURRENT (A)
D,
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 11. Normalized On−Resistance vs
Figure 10. On−Region Characteristics
Drain Current and Gate Voltage
2.0
1.8
0.14
0.12
0.1
PULSE DURATION = 80 μs
I
D
= −2.3 A
I
V
= −2.3 A
D
DUTY CYCLE = 0.5% MAX
= −10 V
GS
1.6
1.4
1.2
1
T = 125°C
J
0.08
0.06
0.04
0.02
0
T = 25°C
J
0.8
0.6
0.4
125 150
−25
T , JUNCTION TEMPERATURE (°C)
8
, GATE TO SOURCE VOLTAGE (V)
100
−75 −50
0
25
75
6
50
4
2
10
V
GS
J
Figure 12. Normalized On−Resistance vs
Figure 13. On−Resistance vs Gate to
Junction Temperature
Source Voltage
10
10
1
PULSE DURATION = 80 μs
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
8
6
4
2
T = 150°C
J
V
DS
= −5°C
T = 25°C
J
T = 150°C
J
0.1
T = −55°C
J
T = 25°C
J
0.01
T = −55°C
J
0
0.001
1
0.8
1.2
1
2
5
0.4
0.6
3
0
4
0.2
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 15. Source to Drain Diode Forward
Voltage vs Source Current
Figure 14. Transfer Characteristics
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6
FDMQ8203
TYPICAL CHARACTERISTICS (Q1 P−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
1000
10
8
I
D
= −2.3 A
C
ISS
V
DS
= −8 V
6
4
100
V
DS
= −10 V
C
OSS
V
DD
= −12 V
2
0
f = 1 MHz
= 0 V
C
RSS
V
GS
10
8
6
14
10
12
2
4
0
1
10
100
0.1
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 17. Capacitance vs Drain to Source
Voltage
Figure 16. Gate Charge Characteristics
20
10
1 ms
10 ms
1
THIS AREA IS
100 ms
1 s
LIMITED BY r
DS(on)
0.1
SINGLE PULSE
T = MAX RATED
J
10 s
DC
R
= 160°C/W
θ
JA
0.01
T = 25°C
A
0.005
0.1
1
10
100
300
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 18. Forward Bias Safe Operating Area
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7
FDMQ8203
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
2000
1000
SINGLE PULSE
= 160°C/W
R
q
JA
T = 25°C
A
100
10
1
0.1
−4
−3
−2
−1
10
10
10
10
100
1
10
1000
t, PULSE WIDTH (s)
Figure 19. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.05
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
= 160°C/W
R
1
2
q
JA
PEAK T = P
* Z
* R
+ T
JA A
q
q
J
DM
JA
0.001
0.0005
−1
−4
−3
−2
10
10
100
1000
10
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 20. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries.
GreenBridge is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN12 5x4.5, 0.8P
CASE 511CS
ISSUE O
DATE 31 AUG 2016
5.00
A
B
4.45
(0.40)
(0.25)
0.10 C
2.10(4X)
7
2X
12
1.00(4X)
(0.50)
3.50
4.50
PIN#1
IDENT AREA
4.80
(0.50)2X
0.10 C
1
0.80
(0.65)
6
TOP VIEW
2X
0.40
(12x)
RECOMMENDED LAND PATTERN
0.80 MAX
0.10 C
(0.20)
0.08 C
0.05
C
NOTES:
0.00
A. PACKAGE DOES NOT FULLY CONFORM TO
JEDEC MO−229 REGISTRATION
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.
SEATING
SIDE VIEW
PLANE
0.05
5.00
1.95
(4X)
(0.35)4X
(0.50)2X
1.85
1
6
PIN#1
IDENT
(0.50)2X
0.05
4.50
1.05
0.95
(4X)
0.55
0.45
0.10 C A B
0.05
C
7
12
0.80
2.40
0.35
0.25
(12X)
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13607G
WDFN12 5X4.5, 0.8P
PAGE 1 OF 1
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