FDMS0310AS [ONSEMI]
N 沟道，PowerTrench® SyncFET™，30V，22A，4.3mΩ;
| 型号： | FDMS0310AS |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® SyncFET™，30V，22A，4.3mΩ |
| 文件： | 总9页 (文件大小：471K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH), SyncFETt
V
R
MAX
I MAX
D
DS
DS(on)
30 V
4.3 mW @ 10 V
5.2 mW @ 4.5 V
22 A
30 V, 22 A, 4.3 mW
Pin 1
S
S
FDMS0310AS
General Description
S
G
The FDMS0310AS has been designed to minimize losses in power
conversion application. Advancements in both silicon and package
D
D
D
D
technologies have been combined to offer the lowest R
while
DS(on)
Top
Bottom
maintaining excellent switching performance. This device has
the added benefit of an efficient monolithic Schottky body diode.
PQFN8 5 y 6, 1.27P
(Power 56)
CASE 483AE
Features
• Max R
• Max R
= 4.3 mW at V = 10 V, I = 19 A
GS D
DS(on)
= 5.2 mW at V = 4.5 V, I = 17 A
DS(on)
GS
D
ELECTRICAL CONNECTION
• Advanced Package and Silicon Combination for Low R
and High Efficiency
DS(on)
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
• SyncFET Schottky Body Diode
• MSL1 Robust Package Design
• 100% UIL Tested
• Pb−Free, Halide Free and RoHS Compliant
Applications
• Synchronous Rectifier for DC/DC Converters
• Notebook Vcore/GPU Low Side Switch
• Networking Point of Load Low Side Switch
• Telecom Secondary Side Rectification
N-CHANNEL MOSFET
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
&Z&3&K
FDMS
0310AS
Symbol
Parameter
Drain to Source Voltage
Value
Unit
V
V
DS
V
GS
30
20
Gate to Source Voltage (Note 4)
Drain Current:
− Continuous (Package limited)
− Continuous (Silicon limited)
− Continuous T = 25°C (Note 1a)
V
I
D
A
T
C
= 25°C
22
80
19
100
C
&Z
&3
= Assembly Plant Code
= 3−Digit Date Code
(Year and Week)
T
= 25°C
A
− Pulsed
&K
= 2−Digit Lot Run Code
FDMS0310AS = Specific Device Code
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation:
33
mJ
W
AS
P
D
T
= 25°C
41
2.5
C
ORDERING INFORMATION
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to
+150
°C
J
STG
†
Device
Package
Shipping
FDMS0310AS PQFN8 5X6, 1.27P
(Pb−Free, Halide
3000 /
Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2023 − Rev. 3
FDMS0310AS/D
FDMS0310AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
3.0
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
R
q
JC
JA
R
50
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
= 1 mA, V = 0 V
30
33
−
−
−
−
V
V
DSS
D
GS
BV
Drain to Source Breakdown Voltage
Transient
V
= 0 V, Transient = 100 ns
DSST
GS
Breakdown Voltage Temperature
Coefficient
I = 10 mA, Referenced to 25_C
D
−
23
−
mV/_C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
−
−
−
−
500
100
mA
DSS
GSS
DS
GS
I
Gate to Source Leakage Current, Forward
= 20 V, V = 0 V
nA
GS
DS
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = 1 mA
1.2
1.5
3.0
V
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
I = 10 mA, Referenced to 25_C
D
−
−4
−
mV/_C
DVGS(th)
DTJ
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 19 A
−
−
−
−
3.6
4.5
4.8
103
4.3
5.2
6.0
−
mW
DS(on)
D
= 4.5 V, I = 17 A
D
= 10 V, I = 19 A, T = 125°C
D
J
g
FS
= 5 V, I = 19 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
1715
655
75
2280
870
110
2.5
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.7
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 15 V, I = 19 A, V = 10 V,
GEN
−
−
−
−
−
9.0
3.9
25
18
10
40
10
37
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
3.2
27
Q
Total Gate Charge
V
= 0 V to 10 V, V = 15 V,
DD
= 19 A
g
GS
I
D
V
D
= 0 V to 4.5 V, V = 15 V,
−
13
19
nC
GS
DD
I
= 19 A
Q
Gate to Source Charge
V
DD
V
DD
= 15 V, I = 19 A
−
−
4.2
3.7
−
−
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
= 15 V, I = 19 A
D
gd
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2
FDMS0310AS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2 A (Note 2)
−
−
−
−
0.6
0.8
24
0.8
1.2
38
V
SD
GS
S
= 0 V, I = 19 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 19 A, di/dt = 300 A/ms
F
ns
rr
Q
Reverse Recovery Charge
24
38
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a) 50°C/W when mounted on
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 33 mJ is based on starting T = 25°C, L = 0.3 mH, I = 15 A, V = 27 V, V = 10 V.
AS
J
AS
DD
GS
4. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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3
FDMS0310AS
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
5
100
80
60
40
20
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
V
= 10 V
= 6 V
GS
GS
V
GS
= 3 V
4
3
2
1
0
V
V
= 4.5 V
= 4 V
GS
GS
V
GS
= 3 V
V
= 3.5 V
GS
V
= 3.5 V
= 6 V
GS
V
GS
= 4 V
V
GS
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
V
GS
= 4.5 V
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
16
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 19 A
= 10 V
D
GS
I
D
= 19 A
6
T = 125°C
J
4
T = 25°C
J
2
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
10
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
100
80
60
40
20
0
100
10
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
DS
= 5 V
T = 125°C
J
1
T = 125°C
J
T = 25°C
J
0.1
T = 25°C
J
T = −55°C
J
0.01
0.001
T = −55°C
J
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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4
FDMS0310AS
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
3000
I
D
= 19 A
C
iss
1000
V
DD
= 10 V
6
V
DD
= 15 V
C
C
oss
rss
4
V
DD
= 20 V
100
2
f = 1 MHz
= 0 V
V
GS
0
40
0.1
1
10
30
0
5
10
15
20
25
30
V
DS
, Drain to Source Voltage (V)
Q , Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
100
80
60
40
20
0
40
10
R
= 3.0°C/W
q
JC
V
= 10 V
GS
T = 25°C
J
T = 100°C
J
V
GS
= 4.5 V
T = 125°C
J
Limited by Package
25 50
1
0.001
0.01
0.1
1
10
40
75
100
125
150
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
200
100
2000
1000
Single pulse
R
= 125°C/W
q
JA
100 ms
T = 25°C
A
10
100
10
1 ms
10 ms
1
This Area is
100 ms
Limited by R
DS(on)
1 s
Single Pulse
0.1
0.01
10 s
DC
T = Max Rated
J
q
R
= 125°C/W
JA
1
T = 25°C
A
0.5
10
−4
−3
−2
−1
0.01
100 200
0.1
1
10
10
10
10
1
10
100 1000
t, Pulse Width (s)
V
DS
, Drain to Source Voltage (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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5
FDMS0310AS
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
= 125°C/W
(Note 1b)
NOTES:
Duty Factor: D = t /t
R
0.001
0.0001
q
JA
1
2
Peak T = P
× Z (t) × R + T
q q
JA JA A
J
DM
−3
−2
−1
−4
10
10
10
1
100
1000
10
10
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
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6
FDMS0310AS
TYPICAL CHARACTERISTICS (continued)
SyncFET Schottky Body Diode Characteristics
onsemi’s SyncFET process embeds a Schottky diode in
parallel with POWERTRENCH MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 14 shows
the reverse recovery characteristic of the FDMS0310AS.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
−2
25
20
15
10
T = 125°C
J
−3
−4
−5
10
10
10
T = 100°C
J
di/dt = 300 A/ms
10
5
0
T = 25°C
J
−6
−5
10
0
5
10
15
20
25
0
50
100
150
200
Time (ns)
V
DS
, Reverse Voltage (V)
Figure 15. SyncFET Body Diode Reverse
Figure 14. FDMS0310AS SyncFET Body Diode
Reverse Recovery Characteristics
Leakage vs. Drain−Source Voltage
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SyncFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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