FDPF190N15A [ONSEMI]
N 沟道 PowerTrench® MOSFET 150V，27.4A，19mΩ;
| 型号： | FDPF190N15A |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 150V，27.4A，19mΩ 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：1033K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2015 年12 月
FDPF190N15A
N 沟道PowerTrench MOSFET
150 V，27.4 A，19 mΩ
®
特性
•
说明
此N 沟道MOSFET 采用飞兆半导体先进的PowerTrench® 工艺
生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越
开关性能而定制的。
RDS(on) = 14.7 mΩ (Typ.)@VGS = 10 V, ID = 27.4 A
• 低栅极电荷，QG = 31 nC （典型值）
• 低Crss （典型值56 pF）
• 快速开关速度
应用
• 消费电子设备
• 改善的dv/dt 处理能力
• 符合RoHS 标准
•
LED 电视
• 用于ATX/Sever/Telecom PSU 的同步整流
• 不间断电源
• 微型太阳能逆变器
D
G
G
D
S
TO-220F
S
绝对最大额定值TC = 25oC 除非另有说明。
FDPF190N15A
符号
参数
- DC
单位
VDSS
VGSS
150
±20
V
漏极－源极电压
栅极－源极电压
V
A
- AC
(f > 1 Hz)
±30
27.4
－连续(TC = 25oC)
－连续(TC = 100oC)
－脉冲
ID
漏极电流
17.4
IDM
（注1）
110
A
mJ
漏极电流
EAS
dv/dt
261
单脉冲雪崩能量
二极管恢复dv/dt 峰值
（注2）
（注3）
6.0
V/ns
W
W/oC
oC
(TC = 25oC)
－超过25oC 时降额
33
PD
功耗
0.26
TJ, TSTG
TL
-55 至+150
300
工作和存储温度范围
oC
用于焊接的最大引脚温度，距离外壳1/8”，持续5 秒
热性能
FDPF190N15A
符号
RθJC
参数
单位
结至外壳热阻最大值
3.3
oC/W
结至环境热阻最大值
RθJA
62.5
www.fairchildsemi.com
©2011 飞兆半导体公司
FDPF190N15A Rev. 1.5
1
封装标识与定购信息
器件编号
顶标
FDPF190N15A
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FDPF190N15A
TO-220F
不适用
50 单元
电气特性TC = 25oC 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 μA, VGS = 0 V
D = 250 μA，参考25oC
150
-
-
-
-
V
漏极－源极击穿电压
ΔBVDSS
/ ΔTJ
击穿电压温度系数
I
0.14
V/oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
μA
零栅极电压漏极电流
500
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
V
V
V
GS = VDS, ID = 250 μA
GS = 10 V, ID = 27.4 A
DS = 10 V, ID = 27.4 A
2.0
-
4.0
19.0
-
V
mΩ
S
栅极阈值电压
-
-
14.7
64
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
2020
700
56
2685
pF
pF
pF
pF
nC
nC
nC
Ω
输入电容
V
DS = 25 V, VGS = 0 V,
Coss
Crss
930
输出电容
f = 1 MHz
85
-
反向传输电容
Coss(er)
Qg(tot)
Qgs
VDS = 75 V, VGS = 0 V
252
30
能源相关输出电容
10V 的栅极电荷总量
栅极－源极栅极电荷
栅极－漏极“ 密勒” 电荷
等效串联电阻(G-S)
39
-
VDS = 120 V, ID = 27.4 A,
VGS = 10 V
8.8
7.3
1.5
（说明4）
Qgd
-
ESR
f = 1 MHz
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
18
16
32
8
46
42
74
26
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 75 V, ID = 27.4 A,
VGS = 10 V, RG = 4.7 Ω
（说明4）
漏极－源极二极管特性
IS
-
-
-
-
-
-
-
27.4
110
1.3
-
A
A
漏极－源极二极管最大正向连续电流
漏极－源极二极管最大正向脉冲电流
漏极－源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 27.4 A
VGS = 0 V, ISD = 27.4 A,
dIF/dt = 100 A/μs, VDD = 120 V
-
V
76
0.18
ns
μC
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. L = 0.33 mH，I = 29 A，R = 25 Ω，启动T = 25°C。
AS
G
J
3. I ≤ 27.4 A，di/dt ≤ 200 A/μs，V ≤ BV
，启动T = 25°C。
SD
DD
DSS
J
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2011 飞兆半导体公司
FDPF190N15A Rev. 1.5
2
典型性能特征
图1. 导通区域特性
图2. 传输特性
200
200
VGS = 15.0V
*Notes:
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1. VDS = 10V
100
100
2. 250μs Pulse Test
150oC
25oC
10
-55oC
10
4
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.1
1
2
2
3
4
5
6
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压
图4. 体二极管正向电压变化与源电流和温度
0.020
200
100
150oC
VGS = 10V
25oC
0.015
10
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
100 125
2. 250μs Pulse Test
0.010
1
0.0
0
25
50
75
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图5. 电容特性
图6. 栅极电荷
5000
10
Ciss
VDS = 30V
8
6
4
2
0
VDS = 75V
1000
VDS = 120V
Coss
100
*Note:
1. VGS = 0V
Crss
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds
= C
gd
oss
rss
gd
10
5
*Note: ID = 27.4A
24
0.1
1
10
100 200
0
8
16
32
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
©2011 飞兆半导体公司
3
FDPF190N15A Rev. 1.4
典型性能特征（接上页）
图7. 击穿电压变化与温度
图8. 导通电阻变化与温度
1.10
2.5
2.0
1.5
1.0
0.5
0.0
1.05
1.00
0.95
0.90
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250μA
2. ID = 27.4A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与壳体温度
500
30
100
10
25
20
15
10
5
100μs
1ms
Operation in This Area
is Limited by R DS(on)
10ms
1
0.1
100ms
DC
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0
25
0.1
1
10
100 300
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. Eoss 与漏极－源极电压
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com
©2011 飞兆半导体公司
FDPF190N15A Rev. 1.5
4
典型性能特征（接上页）
图12. 瞬态热响应曲线
5
1
0.5
0.2
0.1
PDM
0.05
t1
t2
0.1
0.02
0.01
*Notes:
1. ZθJC(t) = 3.8oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
100
101
100
t
1，矩形脉冲持续时间[ 秒]
www.fairchildsemi.com
©2011 飞兆半导体公司
FDPF190N15A Rev. 1.5
5
I
= 常量
G
图13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图14. 阻性开关测试电路与波形
VGS
图15. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
©2011 飞兆半导体公司
FDPF190N15A Rev. 1.5
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图16. 二极管恢复dv/dt 峰值测试电路与波形
www.fairchildsemi.com
©2011 飞兆半导体公司
FDPF190N15A Rev. 1.5
7
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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