FFSB0465A [ONSEMI]
Silicon Carbide (SiC) Schottky Diode, 650 V, 4 A, D2PAK;
| 型号： | FFSB0465A |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode, 650 V, 4 A, D2PAK |
| 文件： | 总6页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
4 A, 650 V, D1, D2PAK-2L
ELECTRICAL CONNECTION
FFSB0465A
1, 3 Cathode
2. Anode
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
3
1
2
Features
2
D PAK2 (TO−263−2L)
• Max Junction Temperature 175°C
• Avalanche Rated 25 mJ
CASE 418BK
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
MARKING DIAGRAM
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
FFSP
Compliant
0465A
AYWWZZ
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
ABSOLUTE MAXIMUM RATINGS
C
FFSB0465A
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
(T = 25°C, Unless otherwise specified)
Symbol
Parameter
FFSB0465A Unit
V
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current
650
25
4
V
mJ
A
RRM
E
AS
I
F
@ T < 160°C
C
ORDERING INFORMATION
Continuous Rectified Forward Current
7.7
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
@ T < 135°C
C
T
T
= 25°C, 10 ms
= 150°C, 10 ms
360
330
38
I
Non−Repetitive Peak
Forward Surge Current
A
C
F, Max
C
I
Non−Repetitive Forward Half−Sine Pulse,
A
A
F, SM
Surge Current
t = 8.3 ms
p
I
Repetitive Forward
Surge Current
Half−Sine Pulse,
p
18
F, RM
t = 8.3 ms
T
T
= 25°C
63
P
tot
Power Dissipation
W
C
= 150°C
10.5
C
T , T
Operating and Storage Temperature Range −55 to +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. E of 25 mJ is based on starting T = 25°C, L = 0.5 mH, I = 10 A, V = 50 V.
AS
J
AS
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2023 − Rev. 4
FFSB0465A/D
FFSB0465A
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction to Case, Max.
2.38
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
I = 4 A, T = 25°C
Min.
Typ.
1.50
1.6
1.72
−
Max.
1.75
2.0
2.4
200
400
600
−
Unit
V
F
Forward Voltage
Reverse Current
−
−
−
−
−
−
−
−
−
−
V
F
C
I = 4 A, T = 125°C
F
C
I = 4 A, T = 175°C
F
C
I
R
mA
V
R
= 650 V, T = 25°C
C
V
R
V
R
= 650 V, T = 125°C
−
C
= 650 V, T = 175°C
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
16
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
258
29
−
−
21
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method†
Reel Size
Tape Width
Quantity
FFSB0465A
FFSB0465A
D2PAK−2L
Tape/Reel
N/A
N/A
800 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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2
FFSB0465A
TYPICAL CHARACTERISTICS T = 25°C UNLESS OTHERWISE NOTED
J
10−6
4
3
2
1
0
10−7
TJ = 175 oC
TJ = −55 oC
10−8
T
J = 75 o
C
TJ = 25 o
C
J = 75 o
C
TJ = 125 o
TJ = 175 o
C
T
TJ = 25 o
C
T
J = 125 oC
TJ = −55oC
C
10−9
0.0
0.5
1.0
1.5
2.0
200
300
400
500
600 650
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
70
56
70
56
42
28
14
0
D = 0.1
42 D = 0.2
D = 0.3
28
D = 0.5
14
D = 1
D = 0.7
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (5C)
C
T , CASE TEMPERATURE (5C)
C
Figure 3. Current Derating
Figure 4. Power Derating
25
20
15
10
5
1000
100
10
0
0
100
200
300
400
500
600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitance Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSB0465A
TYPICAL CHARACTERISTICS T = 25°C UNLESS OTHERWISE NOTED (CONTINUED)
J
5
4
3
2
1
0
0
100
200 300
400
500
600 650
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
0.1
0.01
PDM
0.5
t1
0.2
t2
0.1
NOTES:
0.05
0.02
Z
R
(t) = r(t) x R
o
0.01
SINGLE PULSE
qJC
qJC
0.001
0.0001
= 2.38 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
10−6
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK2 (TO−263−2L)
CASE 418BK
ISSUE O
DATE 02 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXG
AYWW
XXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93788G
D2PAK2 (TO−263−2L)
PAGE 1 OF 1
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