FFSB0665A [ONSEMI]
SiC 二极管，650V，6A，D2PAK;
| 型号： | FFSB0665A |
| 厂家： | 
ONSEMI |
| 描述： | SiC 二极管，650V，6A，D2PAK 功效 测试 光电二极管 |
| 文件： | 总6页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
6 A, 650 V, D1, D2PAK-2L
1.,3. Cathode
2. Anode
Schottky Diode
FFSB0665A
3
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
D2PAK−2L (TO−263−2L)
CASE 418BK
MARKING DIAGRAM
Features
AYWWZZ
FFSB
0665A
• Max Junction Temperature 175°C
• Avalanche Rated 36 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
A
YWW
ZZ
= Assembly Location
= Data Code (Year & Week)
= Lot Code
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
FFSB0665A = Specific Device Code
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
January, 2023 − Rev. 6
FFSB0665A/D
FFSB0665A
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 152°C
650
E
AS
36
mJ
A
I
F
6
C
Continuous Rectified Forward Current @ T < 135°C
9
C
I
Non-Repetitive Peak Forward Surge Current
430
A
A
T
C
T
C
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
415
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
42
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
24
A
F,RM
p
Ptot
T
= 25°C
65
11
W
W
°C
C
C
T
= 150°C
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 36 mJ is based on starting T = 25°C, L = 0.5 mH, I = 12 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
2.3
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 6 A, T = 25°C
Min
−
Typ
1.50
1.6
1.72
−
Max
1.75
2.0
2.4
200
400
600
−
Unit
V
F
V
F
C
I = 6 A, T = 125°C
−
F
C
I = 6 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
−
mA
C
= 650 V, T = 125°C
−
−
C
= 650 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
22
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
−
361
41
−
−
−
−
32
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Marking
Package
Reel Size
Tape Width
Shipping
FFSB0665A
FFSB0665A
D2PAK−2L
(TO−263−2L)
Pb−Free/Halogen
Free
330 mm
24 mm
800 Units /
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FFSB0665A
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
10−6
10−7
10−8
6
5
4
3
2
1
0
o
= 175 C
T
J
TJ = 175 o
J = 125 o
J = 75 o
C
TJ = 25 o
C
o
= 125 C
T
J
T
T
C
T
J = −55oC
o
T
= 75
o
C
J
C
o
= −55 C
T
J
T
= 25
C
J
10−9
0.0
0.5
1.0
1.5
2.0
200
300
400
500
600 650
VR, REVERSE VOLTAGE (V)
V , FORWARD VOLTAGE (V)
Figure 1. FForward Characteristics
Figure 2. Reverse Characteristics
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
o
TC, CASE TEMPERATURE (oC)
TC, CASE TEMPERATURE (C)
Figure 3. Current Derating
Figure 4. Power Derating
30
25
20
15
10
5
1000
100
10
0
0
100 200 300 400 500 600650
VR, REVERSE VOLTAGE (V)
0.1
1
10
100
650
VR, REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSB0665A
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
8
6
4
2
0
0
100 200 300 400 500 600650
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
10−1
10−2
10−3
10−4
PDM
D=0.2
D=0.1
D=0.05
D=0.02
t1
t2
D=0.01
NOTES:
Z
R
(t) = r(t) x R
o
qJC
qJC
= 2.3 C/W
qJC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
J
DM
qJC
C
SINGLE PULSE
1
2
10−6
10−5
10−4
t, RECTANGULAR PULSE DURATION (sec)
10−3
10−2
10−1
1
Figure 8. Junction-to-Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK2 (TO−263−2L)
CASE 418BK
ISSUE O
DATE 02 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXG
AYWW
XXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93788G
D2PAK2 (TO−263−2L)
PAGE 1 OF 1
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