FGA40S65SH [ONSEMI]
IGBT，650 V，40A，场截止沟槽;
| 型号： | FGA40S65SH |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650 V，40A，场截止沟槽 双极性晶体管 |
| 文件： | 总8页 (文件大小：358K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
February 2016
FGA40S65SH
650 V, 40 A Field Stop Trench IGBT
Features
General Description
•
•
•
•
•
•
•
•
Maximum Junction Temperature : TJ = 175oC
Positive Temperaure Co-efficient for Easy Parallel Operating
High Current Capability
Using Fairchild’s proprietary trench design and advanced field
stop IGBT technology, 650V field stop offers superior conduc-
tion and switching performance and easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating and MWO.
Low Saturation Voltage: VCE(sat) = 1.4 V ( Typ.) @ IC = 40 A
100% of the Parts tested for ILM(1)
High Input Impedance
Applications
Tighten Parameter Distribution
•
Induction Heating, MWO
RoHS Compliant
C
E
G
TO-3PN
G C E
Absolute Maximum Ratings
Symbol
Description
FGA40S65SH
Unit
V
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
650
20
V
Transient Gate to Emitter Voltage
Collector Current
30
V
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
80
A
IC
Collector Current
40
A
ILM (1)
ICM (2)
Pulsed Collector Current
Pulsed Collector Current
Diode Forward Current
120
A
120
A
@ TC = 25oC
@ TC = 100oC
40
A
IF
Diode Forward Current
20
A
IFM
PD
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
240
A
@ TC = 25oC
@ TC = 100oC
268
W
W
oC
oC
134
TJ
-55 to +175
-55 to +175
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Thermal Characteristics
Symbol
Parameter
FGA40S65SH
Unit
oC/W
oC/W
RJC (IGBT)
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.56
40
Notes:
1. V = 400 V, V = 15 V, I = 120 A, R = 35 , Inductive Load
CC
GE
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature
©2016 Fairchild Semiconductor Corporation
FGA40S65SH Rev. 1.1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Qty per Tube
FGA40S65SH
FGA40S65SH
TO-3PN
-
-
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown
650
-
-
-
-
V
BVCES
TJ
V/oC
V
GE = 0 V, IC = 1mA
0.65
Voltage
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
250
A
400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 40 mA, VCE = VGE
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V,
4.0
-
5.3
7.5
V
V
1.40
1.81
VCE(sat)
Collector to Emitter Saturation Voltage
Diode Forward Voltage
-
1.65
-
V
T
C = 175oC
IF = 20 A, TC = 25oC
IF = 20 A, TC = 175oC
-
-
1.45
1.65
1.95
-
V
V
VFM
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
2012
49
-
-
-
pF
pF
pF
V
CE = 30 V VGE = 0 V,
,
Output Capacitance
f = 1 MHz
Reverse Transfer Capacitance
26
Switching Characteristics
Td(on) Turn-On Delay Time
Tr
Td(off)
Tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
19.2
65.6
68.8
96.8
194
388
592
19.2
87.2
75.2
158
292
633
925
73
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
Rise Time
Turn-Off Delay Time
Fall Time
VCC = 400 V, IC = 40 A,
R
G = 6 , VGE = 15 V,
Resistive Load, TC = 25oC
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Td(on)
Tr
Td(off)
Tf
Turn-Off Delay Time
Fall Time
VCC = 400 V, IC = 40 A,
G = 6 , VGE = 15 V,
ResistiveLoad, TC = 175oC
R
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Qg
VCE = 400 V, IC = 40 A,
GE = 15 V
Qge
Qgc
13
V
28
©2016 Fairchild Semiconductor Corporation
FGA40S65SH Rev. 1.1
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
TC = 25oC
20V
15V
12V
15V
12V
TC = 175oC
20V
10V
10V
90
90
60
30
0
VGE = 8V
60
VGE = 8V
30
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
3
2
1
120
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
90
80A
60
40A
30
0
IC = 20A
-100
-50
0
50
100
150
200
0
1
2
3
4
Collector-Emitter Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
20
16
12
8
20
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
16
12
8
40A
80A
IC = 20A
40A
IC = 20A
80A
4
4
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2016 Fairchild Semiconductor Corporation
FGA40S65SH Rev. 1.1
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
15
10000
Common Emitter
TC = 25oC
Cies
12
300V
1000
VCC = 200V
400V
9
6
3
0
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
10
0
20
40
60
80
1
10
Collector-Emitter Voltage, VCE [V]
30
Gate Charge, Qg [nC]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
td(off)
TC = 175oC
tr
tf
100
100
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG []
Gate Resistance, RG []
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
400
1000
tr
Eoff
100
Eon
td(on)
Common Emitter
10
VCC = 400V, VGE = 15V
Common Emitter
IC = 40A
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
100
50
TC = 25oC
TC = 175oC
1
20
30
40
50
60
70
80
0
10
20
30
40
50
Gate Resistance, RG []
Collector Current, IC [A]
©2016 Fairchild Semiconductor Corporation
FGA40S65SH Rev. 1.1
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
500
5000
1000
tf
100
Eoff
td(off)
Eon
Common Emitter
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
100
50
10
20
20
30
40
50
60
70
80
30
40
50
60
70
80
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Load Current Vs. Frequency
Figure 16. SOA Characteristics
300
100
250
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
10s
200
150
100
50
VGE = 15/0V, RG = 6
100s
TC = 25oC
10
1
1ms
10 ms
DC
TC = 75oC
*Notes:
1. TC = 25oC
2. TJ = 175oC
TC = 100oC
3. Single Pulse
0.1
0
1k
1
10
100
1000
10k
100k
1M
Collector-Emitter Voltage, VCE [V]
Switching Frequency, f[Hz]
Figure 17. Transient Thermal Impedance of IGBT
0.6
0.1
0.5
0.2
0.1
0.05
PDM
0.02
t1
0.01
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
single pulse
0.005
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
©2016 Fairchild Semiconductor Corporation
FGA40S65SH Rev. 1.1
5
www.fairchildsemi.com
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW ISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
R0.50
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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