FGA40N65SMD [ONSEMI]
IGBT,650V,40A,场截止;型号: | FGA40N65SMD |
厂家: | ONSEMI |
描述: | IGBT,650V,40A,场截止 局域网 栅 瞄准线 双极性晶体管 功率控制 |
文件: | 总11页 (文件大小:478K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2013 年 12 月
FGA40N65SMD
650 V, 40 A 场截止 IGBT
特性
•
•
•
•
•
•
•
最大结温:TJ = 175°C
正温度系数,易于并联运行
高电流能力
概述
飞兆半导体的新型场截止第二代 IGBT 系列产品采用创新型场截
止 IGBT 技术,为光伏逆变器、 UPS、焊机、感应加热、通信电
源、 ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳
性能。
低饱和电压:VCE(sat) = 1.9 V (Typ.) @ IC = 40 A
快速开关:EOFF = 6.5 µJ/A
紧密的参数分布
符合 RoHS 标准
应用
•
光付逆变器、 UPS、焊机、 PFC、感应加热
•
通信电源、 ESS
C
G
TO-3PN
E
G C E
绝对最大额定值
符号
VCES
说明
额定值
650
单位
V
集电极-发射极间电压
20
V
栅极-发射极间电压
瞬态栅极-发射极间电压
集电极电流
VGES
30
V
@ TC = 25°C
@ TC = 100°C
80
40
A
IC
A
集电极电流
ICM (1)
IF
IFM (1)
PD
120
A
集电极脉冲电流
二极管正向电流
二极管正向电流
二极管最大正向脉冲电流
最大功耗
@ TC = 25°C
@ TC = 100°C
40
A
20
A
120
A
@ TC = 25°C
@ TC = 100°C
349
W
W
°C
°C
°C
174
最大功耗
TJ
-55 至 +175
-55 至 +175
300
工作结温
Tstg
TL
存储温度范围
用于焊接的最大引脚温度,距离外壳 1/8",持续 5 秒
注意:
1: 重复额定值:脉宽受最大结温限制
©2011 飞兆半导体公司
www.fairchildsemi.com
FGA40N65SMD Rev. C3
热性能
符号
RθJC(IGBT)
RθJC(Diode)
RθJA
参数
典型值
最大值
0.43
1.5
单位
°C/W
°C/W
°C/W
结点 - 壳体的热阻
结点 - 壳体的热阻
结至环境热阻
40
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷尺寸
带宽
数量
FGA40N65SMD
FGA40N65SMD
TO-3P
塑料管
不适用
不适用
30
IGBT 电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0 V, IC = 250 μA
VGE = 0 V, IC = 250 μA
650
V
集电极 - 发射极击穿电压
ΔBVCES
ΔTJ
击穿温度系数电压
0.6
V/°C
ICES
IGES
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
250
μA
集电极切断电流
±400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 250 μA, VCE = VGE
3.5
4.5
1.9
6.0
2.5
V
V
G-E 阈值电压
I
C = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V,
C = 175oC
VCE(sat)
集电极 - 发射极间饱和电压
2.1
V
T
动态特性
Cies
1880
180
50
pF
pF
pF
输入电容
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Coes
输出电容
Cres
反向传输电容
开关特性
td(on)
tr
12
20
16
28
ns
ns
导通延迟时间
上升时间
td(off)
tf
92
120
17
ns
关断延迟时间
下降时间
VCC = 400 V, IC = 40 A,
R
G = 6 Ω, VGE = 15 V,
13
ns
感性负载, TC = 25°C
Eon
Eoff
Ets
0.82
0.26
1.08
15
1.23
0.34
1.57
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
导通延迟时间
上升时间
td(on)
tr
td(off)
tf
22
ns
116
16
ns
关断延迟时间
下降时间
VCC = 400 V, IC = 40 A,
R
G = 6 Ω, VGE = 15 V,
ns
感性负载, TC = 175°C
Eon
Eoff
Ets
1.08
0.60
1.68
mJ
mJ
mJ
导通开关损耗
关断开关损耗
总开关损耗
©2011 飞兆半导体公司
2
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FGA40N65SMD Rev. C3
IGBT 电气特性(续)
符号
参数
测试条件
最小值 典型值 最大值 单位
Qg
119
180
nC
nC
nC
总栅极电荷
VCE = 400 V, IC = 40 A,
Qge
Qgc
13
20
栅极-发射极间电荷
栅极-集电极间电荷
V
GE = 15 V
58
90
二极管电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
T
C = 25°C
C = 175°C
2.1
1.7
96
2.6
VFM
IF = 20 A
V
二极管正向电压
T
Erec
trr
TC = 175°C
TC = 25°C
TC = 175°C
TC = 25°C
TC = 175°C
TC = 25°C
TC = 175°C
µJ
ns
反向恢复电能
42
二极管反向恢复时间
IF =20 A,
200
3.6
8.0
76
diF/dt = 200 A/μs
Irr
A
二极管反向恢复峰值电流
二极管反向恢复电荷
Qrr
nC
800
©2011 飞兆半导体公司
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FGA40N65SMD Rev. C3
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
120
120
20V
15V
TC = 25oC
20V
15V
TC = 175oC
12V
12V
10V
100
80
60
40
20
10V
100
80
60
40
20
VGE = 8V
VGE = 8V
0
0
0
0
2
4
6
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 饱和电压特性
图 4. 饱和电压与可变电流强度下壳温的关系
3.0
120
100
80
60
40
20
0
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
80A
2.5
2.0
40A
1.5
IC = 20A
1.0
25
50
75
100
125
150
175
0
1
2
3
4
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
16
12
8
20
16
12
8
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
40A
80A
80A
4
4
40A
IC = 20A
IC = 20A
0
4
0
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2011 飞兆半导体公司
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FGA40N65SMD Rev. C3
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
15
4000
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
400V
TC = 25oC
12
VCC = 200V
3000
2000
1000
300V
9
6
3
0
Cies
Coes
Cres
0
0.1
0
40
80
120
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
100
1000
tr
td(off)
100
td(on)
10
tf
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VCC = 400V, VGE = 15V
10
1
IC = 40A
IC = 40A
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
1
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
1000
5
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
Eon
100
tr
1
Eoff
Common Emitter
VCC = 400V, VGE = 15V
10
td(on)
IC = 40A
TC = 25oC
TC = 175oC
1
20
0.1
30
40
50
60
70
80
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG [Ω]
©2011 飞兆半导体公司
5
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FGA40N65SMD Rev. C3
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
1000
6
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
Eon
td(off)
TC = 175oC
100
Eoff
1
tf
10
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
1
20
0.1
20
30
40
50
60
70
80
30
40
50
60
70
80
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
300
120
Square Wave
TJ < 175oC,D = 0.5,VCE = 400V
110
100
10μs
100μs
100
90
80
70
60
50
40
30
20
10
0
VGE = 15/0V,RG = 6Ω
10 ms
1ms
DC
10
Tc = 75oC
1
Tc = 100oC
*Notes:
1. TC = 25oC
2. TJ = 175oC
0.1
3. Single Pulse
0.01
1
10
100
1000
1k
10k
100k
1M
Switching Frequency, f [Hz]
Collector-Emitter Voltage, VCE [V]
图 17. 正向特性
图 18. 反向恢复电流
12
200
TC = 25oC
TC = 175oC
100
10
TC = 175oC
8
6
TC = 125oC
TC = 75oC
di/dt =100A/uS
di/dt = 200A/uS
10
TC = 175oC
TC = 125oC
TC = 75oC
TC = 25oC
4
2
0
TC = 25oC
2
1
0
10
20
30
40
0
1
3
4
Forward Voltage, VF [V]
Forward Current, IF [A]
©2011 飞兆半导体公司
6
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FGA40N65SMD Rev. C3
典型性能特征
图 19. 反向恢复时间
图 20. 存储电荷
1200
300
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
250
1000
200
150
800
600
400
di/dt = 100A/μs
di/dt = 200A/μs
100
50
0
di/dt = 100A/μs
di/dt = 200A/μs
200
0
0
10
20
30
40
0
10
20
30
40
Forward Current, IF [A]
Forwad Current, IF [A]
图 23. IGBT 的瞬态热阻
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
3
1
0.5
0.2
0.1
0.05
0.1
PDM
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
single pulse
Peak Tj = Pdm x Zthjc + TC
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2011 飞兆半导体公司
7
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FGA40N65SMD Rev. C3
机械尺寸
图 23. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和 /
或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件,尤其指保修,保修涵盖飞
兆半导体的全部产品。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
©2011 飞兆半导体公司
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FGA40N65SMD Rev. C3
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