FGA40T65SHDF [ONSEMI]
IGBT，650 V，40A，场截止沟槽;
| 型号： | FGA40T65SHDF |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650 V，40A，场截止沟槽 双极性晶体管 |
| 文件： | 总10页 (文件大小：704K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
April 2015
FGA40T65SHDF
650 V, 40 A Field Stop Trench IGBT
Features
General Description
o
•
•
•
•
•
•
•
•
•
Maximum Junction Temperature : T = 175 C
Using novel field stop IGBT technology, Fairchild’s new series of
J
rd
field stop 3 generation IGBTs offer superior conduction and
Positive Temperature Co-efficient for Easy Parallel Operating
switching performance and easy parallel operation. This device
is well suited for the resonant or soft switching application such
as induction heating and MWO.
High Current Capability
Low Saturation Voltage: V
= 1.45 V ( Typ.) @ I = 40 A
C
CE(sat)
100% of the Parts tested for I (1)
LM
High Input Impedance
Fast Switching
Applications
•
Induction Heating, MWO
Tighten Parameter Distribution
RoHS Compliant
C
G
G
C
E
TO-3PN
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
FGA40T65SHDF
Unit
V
V
V
Collector to Emitter Voltage
650
20
CES
Gate to Emitter Voltage
V
GES
Transient Gate to Emitter Voltage
Collector Current
30
V
o
@ T = 25 C
80
A
C
I
C
o
Collector Current
@ T = 100 C
40
A
C
o
I
I
(1)
(2)
Pulsed Collector Current
Pulsed Collector Current
Diode Forward Current
@ T = 25 C
120
A
LM
C
120
A
CM
o
@ T = 25 C
40
A
C
I
F
o
Diode Forward Current
@ T = 100 C
20
A
C
I
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
60
A
FM
o
@ T = 25 C
268
W
W
C
P
D
o
@ T = 100 C
134
C
o
T
T
-55 to +175
-55 to +175
C
J
o
C
stg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
T
300
C
L
Notes:
1. V = 400 V, V = 15 V, I = 120 A, R = 30 , Inductive Load
CC
GE
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
1
www.fairchildsemi.com
Thermal Characteristics
Symbol
Parameter
FGA40T65SHDF
Unit
o
R
R
R
(IGBT)
(Diode)
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.56
1.75
40
C/W
JC
JC
JA
o
C/W
o
C/W
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method Reel Size Tape Width Quantity
FGA40T65SHDF
FGA40T65SHDF
TO-3PN
Tube
-
-
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
Collector to Emitter Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
-
-
-
-
V
CES
GE
C
BV
/
Temperature Coefficient of Breakdown
Voltage
CES
o
= 0 V, I = 1mA
0.6
V/ C
GE
C
T
J
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0 V
-
-
-
-
250
A
CES
CE
CES
GE
I
, V = 0 V
400
nA
GES
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 40 mA, V = V
GE
4.0
-
5.5
7.5
V
V
GE(th)
C
C
C
CE
= 40 A, V = 15 V
1.45
1.81
GE
V
Collector to Emitter Saturation Voltage
CE(sat)
= 40 A, V = 15 V,
GE
-
1.8
-
V
o
T
= 175 C
C
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
1982
70
-
-
-
pF
pF
pF
ies
V
= 30 V V = 0 V,
, GE
CE
Output Capacitance
oes
res
f = 1 MHz
Reverse Transfer Capacitance
25
Switching Characteristics
T
T
T
T
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
27
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
d(on)
r
Turn-Off Delay Time
Fall Time
64
ns
d(off)
f
V
R
= 400 V, I = 40 A,
CC C
= 6 , V = 15 V,
GE
G
3
ns
o
Inductive Load, T = 25 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
1.22
0.44
1.66
18
mJ
mJ
mJ
ns
on
off
ts
T
T
T
T
d(on)
31
ns
r
Turn-Off Delay Time
Fall Time
70
ns
d(off)
f
V
= 400 V, I = 40 A,
= 6 , V = 15 V,
GE
CC C
R
G
56
ns
o
Inductive Load, T = 175 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
1.78
0.78
2.56
mJ
mJ
mJ
on
off
ts
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
2
www.fairchildsemi.com
Electrical Characteristics of the IGBT (Continued)
Symbol Parameter Test Conditions
Min.
Typ.
68
Max.
Unit
nC
Q
Q
Q
Total Gate Charge
-
-
-
-
-
-
g
V
V
= 400 V, I = 40 A,
= 15 V
CE
GE
C
Gate to Emitter Charge
Gate to Collector Charge
12
nC
ge
gc
25
nC
Electrical Characteristics of the Diode
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.5
Max. Unit
o
T
T
T
T
T
T
T
= 25 C
-
-
-
-
-
-
-
1.95
C
C
C
C
C
C
C
V
Diode Forward Voltage
I = 20 A
V
FM
rec
F
o
= 175 C
1.37
153
-
o
E
T
Reverse Recovery Energy
= 175 C
-
-
-
-
-
J
o
= 25 C
101
Diode Reverse Recovery Time
ns
I = 20 A, dI /dt = 200 A/s
rr
F
F
o
= 175 C
238
o
= 25 C
343
Q
Diode Reverse Recovery Charge
nC
rr
o
= 175 C
1493
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
Figure 15. Load Current Vs. Frequency
Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
PDM
t1
t2
Figure 22. Transient Thermal Impedance of Diode
PDM
t1
t2
©2014 Fairchild Semiconductor Corporation
FGA40T65SHDF Rev. 1.1
7
www.fairchildsemi.com
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW ISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
R0.50
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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