FGA40T65UQDF [ONSEMI]
IGBT，650 V，40A，场截止沟槽;
| 型号： | FGA40T65UQDF |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650 V，40A，场截止沟槽 双极性晶体管 |
| 文件： | 总11页 (文件大小：849K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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May 2016
FGA40T65UQDF
650 V, 40 A Field Stop Trench IGBT
Features
General Description
o
•
•
•
•
•
•
•
•
•
Maximum Junction Temperature: T = 175 C
Using novel field stop IGBT technology, Fairchild’s new series of
J
th
field stop 4 generation IGBTs offer superior conduction and
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
switching performance and easy parallel operation. This device
is well suited for the resonant or soft switching application such
as induction heating and MWO.
Low Saturation Voltage: V
= 1.33 V ( Typ.) @ I = 40 A
C
CE(sat)
100% of the Parts tested for I (1)
LM
High Input Impedance
Fast Switching
Applications
•
Induction Heating, MWO
Tighten Parameter Distribution
RoHS Compliant
C
G
G
C
E
TO-3PN
E
Absolute Maximum Ratings
Symbol
Description
FGA40T65UQDF
Unit
V
V
V
Collector to Emitter Voltage
650
20
CES
Gate to Emitter Voltage
V
GES
Transient Gate to Emitter Voltage
Collector Current
30
V
o
@ T = 25 C
80
A
C
I
C
o
Collector Current
@ T = 100 C
40
A
C
o
I
I
(1)
(2)
Pulsed Collector Current
Pulsed Collector Current
Diode Forward Current
@ T = 25 C
120
A
LM
C
120
A
CM
o
@ T = 25 C
40
A
C
I
F
o
Diode Forward Current
@ T = 100 C
20
A
C
I
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
60
A
FM
o
@ T = 25 C
231
W
W
C
P
D
o
@ T = 100 C
115
C
o
T
T
-55 to +175
-55 to +175
C
J
o
C
stg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
T
300
C
L
Notes:
1. V = 400 V, V = 15 V, I = 120 A, R = 20 , Inductive Load
CC
GE
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature
©2016 Fairchild Semiconductor Corporation
FGA40T65UQDF Rev. 1.0
1
www.fairchildsemi.com
Thermal Characteristics
Symbol
Parameter
FGA40T65UQDF
Unit
o
R
R
R
(IGBT)
(Diode)
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.65
1.75
40
C/W
JC
JC
JA
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Qty per Tube
FGA40T65UQDF
FGA40T65UQDF
TO-3PN
-
-
30
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
Collector to Emitter Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
-
-
-
-
V
CES
GE
C
BV
T
/
Temperature Coefficient of Breakdown
Voltage
CES
o
= 0 V, I = 1mA
0.52
V/ C
GE
C
J
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0 V
-
-
-
-
250
A
CES
CE
CES
GE
I
, V = 0 V
400
nA
GES
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 40 mA, V = V
GE
2.5
-
4.0
5.5
V
V
GE(th)
C
C
C
CE
= 40 A, V = 15 V
1.33
1.67
GE
V
Collector to Emitter Saturation Voltage
CE(sat)
= 40 A, V = 15 V,
GE
-
1.5
-
V
o
T
= 175 C
C
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
7309
58
-
-
-
pF
pF
pF
ies
V
= 30 V V = 0 V,
, GE
CE
Output Capacitance
oes
res
f = 1 MHz
Reverse Transfer Capacitance
30
Switching Characteristics
T
T
T
T
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
32
18
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
J
J
J
ns
ns
ns
ns
J
J
J
d(on)
r
Turn-Off Delay Time
Fall Time
271
11
d(off)
f
V
R
= 400 V, I = 40 A,
= 6 , V = 15 V,
GE
CC C
G
o
Inductive Load, T = 25 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
989
310
1299
30
on
off
ts
T
T
T
T
d(on)
22
r
Turn-Off Delay Time
Fall Time
298
16
d(off)
f
V
= 400 V, I = 40 A,
= 6 , V = 15 V,
GE
CC C
R
G
o
Inductive Load, T = 175 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
1400
553
1953
on
off
ts
©2016 Fairchild Semiconductor Corporation
FGA40T65UQDF Rev. 1.0
2
www.fairchildsemi.com
Electrical Characteristics of the IGBT (Continued)
Symbol Parameter Test Conditions
Min.
Typ.
306
30
Max.
Unit
nC
Q
Q
Q
Total Gate Charge
-
-
-
-
-
-
g
V
V
= 400 V, I = 40 A,
= 15 V
CE
GE
C
Gate to Emitter Charge
Gate to Collector Charge
nC
ge
gc
77
nC
Electrical Characteristics of the Diode
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.5
Max. Unit
o
T
T
T
T
T
T
T
= 25 C
-
-
-
-
-
-
-
1.95
C
C
C
C
C
C
C
V
Diode Forward Voltage
I = 20 A
V
FM
rec
F
o
= 175 C
1.39
115
-
o
E
T
Reverse Recovery Energy
= 175 C
-
-
-
-
-
J
o
= 25 C
89
Diode Reverse Recovery Time
ns
I = 20 A, dI /dt = 200 A/s
rr
F
F
o
= 175 C
251
289
1502
o
= 25 C
Q
Diode Reverse Recovery Charge
nC
rr
o
= 175 C
©2016 Fairchild Semiconductor Corporation
FGA40T65UQDF Rev. 1.0
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
©2016 Fairchild Semiconductor Corporation
FGA40T65UQDF Rev. 1.0
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
©2016 Fairchild Semiconductor Corporation
FGA40T65UQDF Rev. 1.0
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
Figure15.LoadCurrentVs.Frequency
Figure16.SOACharacteristics
Figure17.ForwardCharacteristics
Figure18.ReverseRecoveryCurrent
©2016 Fairchild Semiconductor Corporation
FGA40T65UQDF Rev. 1.0
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
Figure 21.Transient Thermal Impedance of IGBT
PDM
t1
t2
Figure 22.Transient Thermal Impedance of Diode
PDM
t1
t2
©2016 Fairchild Semiconductor Corporation
FGA40T65UQDF Rev. 1.0
7
www.fairchildsemi.com
Mechanical Dimensions
Figure 23. TO3PN, 3-Lead, Plastic, EIAJ SC-65
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2016 Fairchild Semiconductor Corporation
FGA40T65UQDF Rev. 1.0
8
www.fairchildsemi.com
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©2016 Fairchild Semiconductor Corporation
FGA40T65UQDF Rev. 1.0
9
www.fairchildsemi.com
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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