FGB20N60SFD-F085 [ONSEMI]
IGBT，600V，20A，2.2V，D2PAK 场截止;
| 型号： | FGB20N60SFD-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，20A，2.2V，D2PAK 场截止 PC 栅 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：924K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FGB20N60SFD-F085
600V, 20A Field Stop IGBT
General Description
Features
Using novel field-stop IGBT t echnology, ON Semiconductor’s
new series of field-stop IGBTs offers the optimum
performance for automotive chargers, inverters, and other
applications where low conduction and switching losses are
essential.
•
•
•
•
•
•
High current capability
Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A
High input impedance
Fast switching
Qualified to Automotive Requirements of AEC-Q101
RoHS complaint
Applications
•
Inverters, SMPS, PFC, UPS
•
Automotive Chargers, Converters, High Voltage
Auxiliaries
C
C
D2-PAK
G
G
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
600
Units
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
A
A
± 20
40
@ TC = 25oC
@ TC = 100oC
IC
ICM (1)
IF
IFM(1)
PD
Collector Current
20
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
60
Diode Forward Current
20
10
A
A
Diode Forward Current
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
60
A
@ TC = 25oC
@ TC = 100oC
208
W
W
oC
oC
83
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Thermal Characteristics
Symbol
Parameter
Ratings
0.6
Units
oC/W
oC/W
RθJC(IGBT)(2) Thermal Resistance, Junction to Case
RθJC(Diode)
Thermal Resistance, Junction to Case
2.6
Symbol
Parameter
Typ.
Units
RθJA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
75
oC/W
1
©2013 Semiconductor Components Industries, LLC.
August-2017, Rev. 3
Publication Order Number:
FGB20N60SFD-F085/D
Package Marking and Ordering Information
Max Qty
Packaging
Type
Device Marking
Device
Package
Qty per Tube
per Box
FGB20N60SFD
FGB20N60SFD-F085
TO-263
Tube
50ea
-
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
600
-
-
-
V
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage
-
-
0.79
-
V/oC
V
GE = 0V, IC = 250μA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
250
μA
ICES at 80%*BVCES, 150oC
VGE = VGES, VCE = 0V
-
-
-
-
250
IGES
G-E Leakage Current
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250μA, VCE = VGE
4.0
-
4.8
2.2
6.5
V
V
IC = 20A, VGE = 15V
2.85
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 20A, VGE = 15V,
TC = 125oC
-
2.4
-
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
940
110
40
1250
146
53
pF
pF
pF
VCE = 30V VGE = 0V,
f = 1MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
16
13
21
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
90
120
36
ns
V
CC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
24
ns
Inductive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.31
0.13
0.44
12
0.41
0.21
0.59
16
mJ
mJ
mJ
ns
16
21
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
95
126
43
ns
V
CC = 400V, IC = 20A,
G = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
R
28
ns
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
0.45
0.21
0.66
63
0.60
0.38
0.88
95
mJ
mJ
mJ
nC
nC
nC
VCE = 400V, IC = 20A,
GE = 15V
Qge
Qgc
7
11
V
32
48
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2
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.9
Max Units
TC = 25oC
-
-
-
-
-
-
2.5
VFM
Diode Forward Voltage
IF = 10A
V
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
1.7
-
111
-
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
204
174
463
-
IES = 10A, dIES/dt = 200A/μs
244
nC
-
Qrr
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2:Rthjc for D2-PAK: according to Mil standard 883-1012 test method.
Rthja for D2-PAK: according to JESD51-2, test method environmental condition and JESD51-3,low effective thermal conductivity test board for leaded surface mount package.
thermal measurements. JESD51-2: Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air).
www.onsemi.com
3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
60
60
TC = 125oC
15V
12V
TC = 25oC
20V
15V
20V
12V
10V
40
20
0
10V
40
20
0
VGE = 8V
VGE = 8V
0.0
1.5
3.0
4.5
6.0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
60
60
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
40
40
20
0
20
0
0
2
4
6
8
10
12
0
1
2
3
4
5
Gate-Emitter Voltage,VGE [V]
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
4
3
2
1
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
40A
16
12
8
20A
IC = 10A
20A
40A
IC = 10A
4
0
25
50
75
100
125
0
4
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
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4
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
16
12
8
IC = 10A
20A
IC = 10A
20A
40A
40A
12
4
4
0
0
0
4
8
16
20
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
2500
Common Emitter
Common Emitter
TC = 25oC
VGE = 0V, f = 1MHz
TC = 25oC
Cies
12
2000
1500
1000
500
0
300V
VCC = 100V
9
200V
6
3
0
Coes
Cres
0
20
40
60
80
0.1
1
10
30
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
100
10μs
Common Emitter
VCC = 600V, VGE = 15V
100μs
IC = 20A
10
TC = 25oC
TC = 125oC
1ms
10 ms
DC
tr
1
0.1
td(on)
*Notes:
1. TC = 25oC
10
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
1000
0
10
20
30
40
50
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [Ω]
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5
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
100
Common Emitter
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
tr
td(off)
100
10
td(on)
t
f
10
0
10
20
30
40
50
60
0
10
20
30
40
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs. Gate Resistance
500
3
Common Emitter
Common Emitter
VGE = 15V, RG = 10Ω
VCC = 600V, VGE = 15V
TC = 25oC
IC = 20A
TC = 25oC
1
TC = 125oC
TC = 125oC
td(off)
100
Eon
tf
Eoff
10
0.1
0
10
20
30
40
0
10
20
30
40
50
60
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn off Switching
SOA Characteristics
100
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
Eon
1
10
0.1
Eoff
Safe Operating Area
VGE = 15V, TC = 125oC
0.01
1
0
10
20
30
40
1
10
100
1000
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
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6
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Typical Reverse Current vs.
Reverse Voltage
100
40
10
10
TJ = 125oC
TJ = 125oC
1
TJ = 75oC
TJ = 75oC
0.1
1
TJ = 25oC
0.01
TJ = 25oC
0.1
1E-3
0
1
2
3
4
0
100
200
300
400
500
600
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
150
250
120
200
di/dt = 100A/μs
200A/μs
90
150
100
50
0
200A/μs
60
30
di/dt = 100A/μs
0
5
10
15
20
0
5
10
15
20
Forward Current, IF [A]
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0. 5
0.2
0. 1
0.1
PDM
0. 05
t1
0.02
t2
0. 01
Duty Factor, D = t1/t2
single pulse
Peak Tj = Pdm x Zthjc + TC
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
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7
Mechanical Dimensions
D2PAK
Dimensions in Millimeters
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8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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