FGB3040G2-F085C [ONSEMI]
IGBT，400V，26A，1.35V，300mJ，D2PAKEcoSPARK® II，N 沟道点火;
| 型号： | FGB3040G2-F085C |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，400V，26A，1.35V，300mJ，D2PAKEcoSPARK® II，N 沟道点火 双极性晶体管 |
| 文件： | 总9页 (文件大小：963K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FGD3040G2-F085C
FGB3040G2-F085C
EcoSPARKꢀ 2 Ignition IGBT
300 mJ, 400 V, N−Channel Ignition IGBT
Features
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• SCIS Energy = 300 mJ at T = 25°C
J
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
COLLECTOR
Applications
R
1
GATE
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Application
R
2
EMITTER
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Value
Unit
V
BV
400
Collector to Emitter Breakdown
Voltage (IC = 1 mA)
CER
V
mJ
mJ
A
BV
28
300
170
41
Emitter to Collector Voltage − Reverse
ECS
Battery Condition (IC = 10 mA)
E
ISCIS = 14.2 A, L = 3.0 mHy,
SCIS25
RGE = 1 KW, T = 25°C (Note 1)
C
2
DPAK3
CASE 369AS
D PAK−3
E
ISCIS = 10.8 A, L = 3.0 mHy,
SCIS150
CASE 418AJ
RGE = 1 KW, T = 150°C (Note 2)
C
IC25
Collector Current Continuous
at VGE = 5.0 V, T = 25°C
MARKING DIAGRAM
C
A
IC110
25.6
Collector Current Continuous
at VGE = 5.0 V, T = 110°C
C
AYWW
XXX
XXXXXG
V
W
V
10
Gate to Emitter Voltage Continuous
GEM
PD
Power Dissipation Total, T = 25°C
150
1
C
W/°C
°C
Power Dissipation Derating, T > 25°C
C
A
Y
WW
XXXX
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
T , T
J
−55 to +175
Operating Junction and Storage
Temperature
STG
°C
°C
kV
kV
T
L
300
260
4
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
T
Reflow Soldering according to
JESD020C
PKG
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
ESD
HBM−Electrostatic Discharge Voltage
at 100 pF, 1500 W
2
CDM−Electrostatic Discharge Voltage
at 1 W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on
the test conditions that is starting T = 25°C, L = 3 mHy, ISCIS = 14.2 A,
J
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on
the test conditions that is starting T = 150°C, L = 3mHy, ISCIS = 10.8 A,
J
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
April, 2019 − Rev. 1
FGX3040G2−F085C//D
FGD3040G2−F085C
THERMAL RESISTANCE RATINGS
Characteristic
Junction−to−Case – Steady State (Drain)
Symbol
Max
Units
R
1
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
OFF CHARACTERISTICS
BV
BV
BV
Collector to Emitter Breakdown
Voltage
I
= 2 mA, V = 0 V,
GE
GE
370
390
28
400
430
450
−
V
V
V
CER
CE
R
= 1 kW,
T = −40 to 150°C
J
Collector to Emitter Breakdown
Voltage
I
= 10 mA, V
GE
= 0 V,
= 0 V,
420
CES
CE
GE
R
= 0,
T = −40 to 150°C
J
Emitter to Collector Breakdown
Voltage
I
= −75 mA, V
GE
−
ECS
CE
T = 25°C
J
BV
I
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
=
2 mA
12
−
14
−
−
25
1
V
GES
GES
V
R
= 175 V
= 1 kW
T = 25°C
mA
mA
mA
CER
CE
J
GE
T = 150°C
J
−
−
I
Emitter to Collector Leakage Current
V
= 24 V
T = 25°C
J
−
−
1
ECS
EC
T = 150°C
J
−
−
40
−
R
R
Series Gate Resistance
−
120
−
W
W
1
2
Gate to Emitter Resistance
10K
30K
ON CHARACTERISTICS
V
V
V
Collector to Emitter Saturation
Voltage
I
I
I
= 6 A, V
= 4 V, T = 25°C
−
−
−
1.15
1.35
1.68
1.25
1.50
1.85
V
V
V
CE(SAT)
CE(SAT)
CE(SAT)
CE
CE
CE
GE
J
Collector to Emitter Saturation
Voltage
= 10 A, V
= 15 A, V
= 4.5 V, T = 150°C
J
GE
GE
Collector to Emitter Saturation
Voltage
= 5 V, T = 150°C
J
DYNAMIC CHARACTERISTICS
Q
Gate Charge
I
I
V
= 10 A, V
= 1 mA
= 12 V, V = 5 V
−
1.3
0.75
−
21
1.5
1.2
2.8
−
2.2
1.8
−
nC
V
G(ON)
CE
CE
CE
GE
V
Gate to Emitter Threshold Voltage
T = 25°C
J
GE(TH)
CE
= V
GE
CE
T = 150°C
J
V
Gate to Emitter Plateau Voltage
V
= 12 V, I
= 10 A
V
GEP
CE
SWITCHING CHARACTERISTICS
td
Current Turn−On Delay
Time−Resistive
V
V
J
= 14 V, R = 1 W,
−
0.9
4
ms
(ON)R
CE
GE
L
= 5 V, R = 470 W,
G
T = 25°C
t
rR
Current Rise Time−Resistive
−
−
1.9
4.8
7
td
(OFF)L
Current Turn−Off Delay
Time−Inductive
V
V
CE
= 300 V, L = 1 mH,
10
CE
GE
= 5 V, R = 470 W,
G
I
= 6.5 A, T = 25°C
J
t
fL
Current Fall Time−Inductive
−
2.0
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Package
Shipping
FGD3040G2−F085C
DPAK
(Pb−Free)
2500 Units / Tape & Reel
2
FGB3040G2−F085C
D PAK
800 Units / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
FGD3040G2−F085C
TYPICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching
Figure 2. Self Clamped Inductive
Switching Current vs. Inductance
Current vs. Time in Clamp
Figure 3. Collector to Emitter On−State Voltage
Figure 4. Collector to Emitter On−State Voltage
vs. Junction Temperature
vs. Junction Temperature
Figure 5. Collector to Emitter On−State Voltage
Figure 6. Collector to Emitter On−State Voltage
vs. Collector Current
vs. Collector Current
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3
FGD3040G2−F085C
TYPICAL CHARACTERISTICS (continued)
Figure 7. Collector to Emitter On−State Voltage
Figure 8. Transfer Characteristics
vs. Collector Current
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
Figure 11. Threshold Voltage vs. Junction
Temperature
Figure 12. Leakage Current vs. Junction
Temperature
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4
FGD3040G2−F085C
TYPICAL CHARACTERISTICS (continued)
Figure 13. Switching Time vs. Junction Temperature
Figure 14. Capacitance vs. Collector to Emitter
Figure 15. Break Down Voltage vs. Series Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
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5
FGD3040G2−F085C
TEST CIRCUIT AND WAVEFORMS
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
ECOSPARK is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
DESCRIPTION:
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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