FGB3040G2-F085 [ONSEMI]
IGBT,400V,26A,1.35V,300mJ,D2PAKEcoSPARK® II,N 沟道点火;型号: | FGB3040G2-F085 |
厂家: | ONSEMI |
描述: | IGBT,400V,26A,1.35V,300mJ,D2PAKEcoSPARK® II,N 沟道点火 栅 双极性晶体管 |
文件: | 总13页 (文件大小:808K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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ECOSPARK)2 300 mJ, 400 V,
N-Channel Ignition IGBT
COLLECTOR
(FLANGE)
G
E
JEDEC TO−263AB
D PAK−3 (TO−263, 3−LEAD)
FGB3040G2-F085,
FGD3040G2-F085,
FGP3040G2-F085,
FGI3040G2-F085
2
CASE 418AJ
COLLECTOR
(FLANGE)
G
E
JEDEC TO−263AA
DPAK3 (TO−252 3 LD)
Features
CASE 369AS
• SCIS Energy = 300 mJ at T = 25°C
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
J
E
C
G
E
C
G
Applications
• Automotive Ignition Coil Driver Circuits
• Coil On Plug Applications
JEDEC TO−220AB
TO−220−3LD
JEDEC TO−262AA
I2PAK (TO−262 3 LD)
CASE 340AT
CASE 418AV
SYMBOL
COLLECTOR
MARKING DIAGRAMS
$Y&Z&3&K
FGB
$Y&Z&3&K
FGD
R1
GATE
3040G2
3040G2
R2
EMITTER
$Y&Z&3&K
FGI
3040G2
$Y&Z&3&K
FGP
3040G2
FGx3040G2 = Specific Device Code (x = B/D/P/I)
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digits Lot Run Traceability Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
July, 2022 − Rev. 4
FGI3040G2−F085/D
FGB3040G2−F085, FGD3040G2−F085, FGP3040G2−F085, FGI3040G2−F085
DEVICE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Collector to Emitter Breakdown Voltage (I = 1 mA)
Rating
Unit
V
BV
BV
400
CER
ECS
C
Emitter to Collector Voltage − Reverse Battery Condition (I = 10 mA)
28
V
C
E
Self Clamping Inductive Switching Energy (Note 1)
Self Clamping Inductive Switching Energy (Note 2)
300
mJ
mJ
A
SCIS25
E
170
SCIS150
I
Collector Current Continuous, at V = 5.0 V, T = 25°C
41
C25
GE
C
I
Collector Current Continuous, at V = 5.0 V, T = 110°C
25.6
A
C110
GE
C
V
Gate to Emitter Voltage Continuous
Power Dissipation Total, at T = 25°C
10
V
GEM
P
150
W
D
C
Power Dissipation Derating, for T > 25°C
1
W/°C
°C
°C
°C
°C
kV
kV
C
T
J
Operating Junction Temperature Range
Storage Junction Temperature Range
−55 to +175
T
T
−55 to +175
STG
T
L
Max. Lead Temp. for Soldering (Leads at 1.6 mm from case for 10 s)
Reflow Soldering according to JESD020C
300
260
4
PKG
ESD
HBM−Electrostatic Discharge Voltage at 100 pF, 1500
CDM−Electrostatic Discharge Voltage at 1
ꢀ
ꢀ
2
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Self Clamping Inductive Switching Energy (E
) of 300 mJ is based on the test conditions that starting Tj = 25°C; L = 3 mHy,
SCIS25
I
= 14.2 A, V = 100 V during inductor charging and V = 0 V during the time in clamp.
SCIS
CC CC
2. Self Clamping Inductive Switching Energy (E
) of 170 mJ is based on the test conditions that starting Tj = 150°C; L = 3 mHy,
SCIS150
I
= 10.8 A, V = 100 V during inductor charging and V = 0 V during the time in clamp.
CC CC
SCIS
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FGB3040G2−F085, FGD3040G2−F085, FGP3040G2−F085, FGI3040G2−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF STATE CHARACTERISTICS
BV
BV
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
I
= 2 mA, V = 0, R = 1 kꢀ,
370
390
400
420
430
450
V
V
CER
CE
J
GE
GE
T = −40 to 150°C
I
= 10 mA, V = 0 V, R = 0,
GE GE
CES
CE
T = −40 to 150°C
J
BV
BV
I
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
I
= −20 mA, V = 0 V, T = 25°C
28
12
−
−
14
−
−
−
V
V
ECS
CE
GE
J
=
2 mA
GES
GES
V
= 250 V, R = 1 k
ꢀ
T = 25°C
25
1
ꢁ A
mA
mA
CER
CE
EC
GE
J
T = 150°C
J
−
−
I
Emitter to Collector Leakage Current
V
= 24 V
T = 25°C
J
−
−
1
ECS
T = 150°C
J
−
−
40
−
R
R
Series Gate Resistance
−
120
−
ꢀ
ꢀ
1
2
Gate to Emitter Resistance
10K
30K
ON STATE CHARACTERISTICS
V
V
V
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Self Clamped Inductive Switching
I
I
I
= 6 A, V = 4 V
T = 25°C
−
−
−
−
1.15
1.35
1.68
−
1.25
1.50
1.85
300
V
V
CE(SAT)
CE(SAT)
CE(SAT)
CE
CE
CE
GE
J
= 10 A, V = 4.5 V
T = 150°C
J
GE
= 15 A, V = 4.5 V
T = 150°C
J
V
GE
E
L = 3.0 mHy, RG = 1 kꢀ, TJ = 25°C
VGE = 5 V, (Note 3)
mJ
SCIS
DYNAMIC CHARACTERISTICS
Q
Gate Charge
I
I
= 10 A, V = 12 V, V = 5 V
−
1.3
0.75
−
21
1.7
1.2
2.8
−
2.2
1.8
−
nC
V
G(ON)
CE
CE
GE
V
Gate to Emitter Threshold Voltage
= 1 mA, V = V
T = 25°C
J
GE(TH)
CE
CE
GE
T = 150°C
J
V
Gate to Emitter Plateau Voltage
V
= 12 V, I = 10 A
V
GEP
CE
CE
SWITCHING CHARACTERISTICS
t
Current Turn−On Delay Time−Resistive
Current Rise Time−Resistive
V
V
J
= 14 V, R = 1 k
ꢀ
−
−
−
−
0.9
1.9
4.8
2.0
4
7
ꢁ s
ꢁ s
ꢁ s
ꢁ s
d(ON)R
CE
GE
L
= 5 V, R = 1 kꢀ ꢂ
G
t
rR
T = 25°C
t
Current Turn−Off Delay Time−Inductive
Current Fall Time−Inductive
V
V
I
= 300 V, L = 1 mH,
15
15
d(OFF)L
CE
GE
CE
= 5 V, R = 1 kꢀ ꢂ
G
t
fL
= 6.5 A, T = 25°C
J
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
R
−
−
1
°C/W
ꢃ
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Self Clamping Inductive Switching Energy (E
) of 300 mJ is based on the test conditions that starting Tj = 25°C; L = 3 mHy,
SCIS25
I
= 14.2 A, V = 100 V during inductor charging and V = 0 V during the time in clamp.
CC CC
SCIS
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FGB3040G2−F085, FGD3040G2−F085, FGP3040G2−F085, FGI3040G2−F085
TYPICAL PERFORMANCE CURVES
100
10
1
45
R
= 1 kꢀ, V = 5 V, V = 100 V
R = 1 kꢀ, V = 5 V, V = 100 V
G GE CE
G
GE
CE
40
35
30
T = 25°C
J
T = 150°C
J
25
20
15
T = 25°C
J
10
5
T = 150°C
J
SCIS Curves valid for V
Voltages of <430 V
clamp
SCIS Curves valid for V
Voltages of <430 V
clamp
0
1
10
100
1000
0
3
6
9
12
15
t , TIME IN CLAMP (ꢁ s)
CLP
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.20
1.50
I
= 6 A
V
= 3.7 V
I
= 10 A
CE
GE
CE
1.45
1.40
V
GE
= 4.0 V
V
= 4.0 V
1.15
1.10
1.05
1.00
GE
V
= 3.7 V
V
GE
1.35
1.30
1.25
1.20
V
GE
= 8 V
V
= 5 V
V
GE
= 4.5 V
GE
V
GE
= 4.5 V
= 5 V
GE
V
= 8 V
GE
1.15
1.10
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Collector to Emitter On−State Voltage
Figure 4. Collector to Emitter On−State Voltage
vs. Junction Temperature
vs. Junction Temperature
30
30
V
GE
V
GE
V
GE
V
GE
V
GE
= 8.0 V
= 5.0 V
= 4.5 V
= 4.0 V
= 3.7 V
V
GE
V
GE
V
GE
V
GE
V
GE
= 8.0 V
= 5.0 V
= 4.5 V
= 4.0 V
= 3.7 V
20
10
0
20
10
0
T = −40°C
T = 25°C
J
J
0
1
2
3
4
0
1
2
3
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On−State Voltage
Figure 5. Collector to Emitter On−State Voltage
vs. Collector Current
vs. Collector Current
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FGB3040G2−F085, FGD3040G2−F085, FGP3040G2−F085, FGI3040G2−F085
TYPICAL PERFORMANCE CURVES (Continued)
30
30
V
V
V
V
V
= 8.0 V
= 5.0 V
= 4.5 V
= 4.0 V
= 3.7 V
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
GE
GE
GE
GE
GE
V
CE
= 5 V
20
20
10
0
T = 175°C
J
10
0
T = 25°C
J
T = −40°C
J
T = 175°C
J
0
1
2
3
4
1.0
1.5
V , GATE TO EMITTER VOLTAGE (V)
GE
2.0
2.5
3.0
3.5
4.0
4.5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 7. Collector to Emitter On−Stage
Figure 8. Transfer Characteristics
Voltage vs. Collector Current
45
10
8
V
GE
= 5.0 V
I
= 10 A, T = 25°C
J
CE
40
35
30
25
20
15
10
5
V
CE
= 6 V
6
V
CE
= 12 V
4
2
0
0
0
10
20
30
40
50
60
25
50
75
100
125
150
175
T , CASE TEMPERATURE (°C)
C
Q , GATE CHARGE (nC)
g
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
2.0
10000
1000
100
10
V
= V
GE
= 1 mA
CE
I
CE
V
ECS
= 24 V
1.8
1.6
1.4
1.2
1.0
V
CES
= 300 V
1
V
CES
= 250 V
0.1
−50 −25
−50 −25
0
25 50 75 100 125 150 175
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 12. Leakage Current vs. Junction
Temperature
Figure 11. Threshold Voltage vs. Junction
Temperature
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FGB3040G2−F085, FGD3040G2−F085, FGP3040G2−F085, FGI3040G2−F085
TYPICAL PERFORMANCE CURVES (Continued)
12
10
8
2000
I
= 6.5 A, V = 5 V, R = 1 k
ꢀ
f = 1 MHz
CE
GE
G
V
GE
= 0 V
Resistive t
OFF
1600
1200
800
400
0
C
Inductive t
IES
OFF
6
4
C
RES
2
Resistive t
C
OES
ON
0
25
50
75
100
125
150
175
0
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Switching Time vs. Junction
Temperature
Figure 14. Capacitance vs. Collector to
Emitter Voltage
430
420
410
400
390
380
I
= 10 mA
CER
T = −40°C
J
T = 25°C
J
T = 175°C
J
10
100
1000
6000
R , SERIES GATE RESISTANCE (ꢀ)
G
Figure 15. Breakdown Voltage vs. Series Gate Resistance
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.20
0.10
0.05
0.02
0.1
0.01
SINGLE PULSE
0.01
10−5
10−4
10−3
10−2
10−1
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
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FGB3040G2−F085, FGD3040G2−F085, FGP3040G2−F085, FGI3040G2−F085
TYPICAL PERFORMANCE CURVES (Continued)
*Operation in this
area is permitted
100
during SCIS
Pulse Operation *
Operation in this area
is limited by Vce(on)
10us
or transconductance
10
100us
1
1ms
10ms
*For Single Non Repetitive
Pulse operation
Tj=175°C
DC &
100ms
Tc=25°C
Vge=5.0V
Rev. 2.1
0.1
1
10
100
500
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Forward Safe Operating Area
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FGB3040G2−F085, FGD3040G2−F085, FGP3040G2−F085, FGI3040G2−F085
TEST CIRCUIT AND WAVEFORMS
L
R
VCC
or
L
LOAD
C
C
RG
RG = 1KW
G
+
G
PULSE
GEN
VCC
DUT
E
DUT
−
5V
E
Figure 18. Inductive Switching Test Circuit
Figure 19. tON and tOFF Switching Test Circuit
V
CE
BV
CES
L
t
P
V
CE
C
VARY t TO OBTAIN
P
+
I
SCIS
R
REQUIRED PEAK I
G
SCIS
V
V
CC
G
CC
DUT
−
V
GE
E
t
P
I
0V
SCIS
0.01W
0
t
AV
Figure 20. Energy Test Circuit
Figure 21. Energy Waveforms
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Shipping
2
FGB3040G2−F085
FGB3040G2
D PAK−3 (TO−263, 3−LEAD) (TO−263AB)
(Pb−Free)
800 / Tape & Reel
2500 / Tape & Reel
400 / Tube
FGD3040G2−F085
FGP3040G2−F085
FGI3040G2−F085
FGD3040G2
FGP3040G2
FGI3040G2
DPAK3 (TO−252 3 LD) (TO−252AA)
(Pb−Free)
TO−220−3LD (TO−220AB)
(Pb−Free)
I2PAK (TO−262 3 LD) (TO−262AA)
(Pb−Free)
400 / Tube
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ECOSPARK is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/
or other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
DESCRIPTION:
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
I2PAK (TO−262 3 LD)
CASE 418AV
ISSUE A
DATE 30 AUG 2022
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXXX
XXXXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13814G
I2PAK (TO−262 3 LD)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
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相关型号:
FGB30N6S2T
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
FAIRCHILD
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