FGB3040CS [ONSEMI]
430 V、19 A、1.6 V、300 mJ、D2PAK、电流感测EcoSPARK® I、N 沟道点火 IGBT;
| 型号： | FGB3040CS |
| 厂家： | 
ONSEMI |
| 描述： | 430 V、19 A、1.6 V、300 mJ、D2PAK、电流感测EcoSPARK® I、N 沟道点火 IGBT 栅 双极性晶体管 |
| 文件： | 总10页 (文件大小：951K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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FGB3040CS
EcoSPARK® 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
General Description
Applications
The FGB3040CS is an lgnition IGBT that offers outstand-
ing SCIS capability along with a ratiometric emitter current
sensing capability. This sensing is based on a emitter
active area ratio of 200:1. The output is provided through a
fourth (sense) lead. This signal provides a current level
that is proportional to the main collector to emitter current.
The effective ratio as measured on the sense lead is a
function of the sense output, the collector current and the
gate to emitter drive voltage.
Smart Automotive lgnition Coil Driver Circuits
ECU Based Systems
Distributorless Based Systems
Coil on Plug Based Systems
Features
SCIS Energy = 300mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Package
Symbol
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
BVCER Collector to Emitter Breakdown Voltage (IC = 2mA)
430
24
BVECS Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition)
ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C)
ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150°C)
V
300
mJ
mJ
A
170
IC25
Continuous Collector Current, at VGE = 4.0V, TC = 25°C
Continuous Collector Current, at VGE = 4.0V, TC = 110°C
Maximum Continuous Gate to Emitter Voltage
Power Dissipation, at TC = 25°C
21
IC110
VGEM
19
A
±10
V
150
W
PD
Power Dissipation Derating, for TC > 25oC
1
W/oC
oC
oC
oC
oC
kV
TJ
Operating Junction Temperature Range
-40 to 175
-40 to 175
300
TSTG
TL
Storage Junction Temperature Range
Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
Max. Package Temp. for Soldering (Package Body for 10 sec)
Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms)
TPKG
ESD
260
4
@2012 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FGB3040CS/D
Package Marking and Ordering Information
Device Marking
3040CS
Device
Package
Reel Size
300mm
Tube
Tape Width
24mm
Quantity
800
FGB3040CS
FGB3040CS
TO-263 6 Lead
TO-263 6 Lead
3040CS
N/A
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
ICE = 2mA, VGE = 0,
BVCER Collector to Emitter Breakdown Voltage RGE = 1KΩ, See Fig. 17
370 410 430
390 430 450
V
TJ = -40 to 150oC
ICE = 10mA, VGE = 0V
BVCES Collector to Emitter Breakdown Voltage RGE = 0, See Fig. 17
V
V
TJ = -40 to 150oC
I
CE = -75mA, VGE = 0V,
BVECS Emitter to Collector Breakdown Voltage
BVGES Gate to Emitter Breakdown Voltage
30
-
-
TC = 25°C
IGES = ±2mA
VGE = ±10V
±12 ±14
-
±9
25
1
V
IGEO
ICES
IECS
R1
Gate to Emitter Leakage Current
-
-
-
-
μA
μA
mA
T
C = 25oC
TC = 150oC
C = 25oC
TC = 150oC
-
VCES = 250V,
See Fig. 13
Collector to Emitter Leakage Current
-
T
-
-
-
1
VEC = 24V,
See Fig. 13
Emitter to Collector Leakage Current
mA
-
-
40
-
Series Gate Resistance
100
Ω
On State Characteristics
T
C = 25oC
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V
-
-
1.3
1.6
V
See Fig. 5
TC = 150oC
See Fig. 6
TC = 150oC
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V
1.6 1.85
1.8 2.35
V
-
-
V
ICE(ON) Collector to Emitter On State Current
VCE = 5V, VGE = 5V
37
-
A
Dynamic Characteristics
I
CE = 10A, VCE = 12V,
QG(ON) Gate Charge
-
15
-
nC
VGE = 5V, See Fig. 16
T
C = 25oC
TC = 150oC
1.3
1.6
2.2
ICE = 1mA, VCE = VGE
See Fig. 12
VGE(TH) Gate to Emitter Threshold Voltage
V
0.75 1.1
1.8
VGEP
βAREA
β5Ω
Gate to Emitter Plateau Voltage
Emitter Sense Area Ratio
ICE = 10A, VCE = 1 2 V
Sense Area/Total Area
-
-
-
3 . 0
1/200
230
-
-
-
V
-
Emitter Current Sense Ratio
Emitter Current Sense Ratio
ICE = 8.0A, VGE = 5V, RSENSE = 5 Ω
ICE = 9.0A, VGE = 5V, RSENSE = 20 Ω
-
β20Ω
550 640 765
-
Switching Characteristics
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
GE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 14
-
-
-
-
0.6
1.5
4.7
2.6
4
7
μs
μs
μs
μs
V
trR
Current Rise Time-Resistive
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500μHy,
VGE = 5V, RG = 1KΩ
15
15
tfL
Current Fall Time-Inductive
TJ = 25°C, See Fig. 14
TJ = 25°C, L = 3.0mHy, ICE = 14.2A,
RG = 1k Ω, VGE = 5V, See Fig. 3&4
SCIS
Self Clamped inductive Switching
-
-
300
mJ
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case All Packages
-
-
1.0 oC/W
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2
Typical Performance Curves
0.6
400
300
200
100
0
o
VGE = 5V, RSENSE = 5 ohms, TJ = 25oC
I
I
I
I
I
I
I
I
= 18A
= 15A
= 10A
= 8A
V
= 5V, T = 25
J
C
CE
CE
CE
CE
CE
CE
CE
CE
GE
0.5
0.4
0.3
0.2
0.1
0.0
= 5A
= 3A
= 1A
= 0.5A
1
10
100
1000
0
2
4
6
8
10 12 14 16 18 20
RSENSE, Emitter Sense Resistance (ohms)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 1. Emitter Sense Voltage vs. Emitter Sense
Resistance
Figure 2. Emitter Sense Voltage vs. Collector to
Emitter Current
35
35
RG = 1KΩ, VGE = 5V, VCE = 14V
RG = 1KΩ, VGE = 5V, VCE = 14V
30
25
30
25
TJ = 25oC
TJ = 25oC
20
20
15
15
TJ = 150oC
10
TJ = 150oC
10
5
5
SCIS Curves valid for Vclamp Voltages of <430V
0
SCIS Curves valid for Vclamp Voltages of <430V
0
0
25
50
75 100 125 150 175 200
0
2
4
6
8
10
tCLP, TIME IN CLAMP (μS)
L, INDUCTANCE (mHy)
Figure 3. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 4. Self Clamped Inductive Switching
Current vs. Inductance
1.36
1.8
ICE = 10A
ICE = 6A
VGE = 3.7V
VGE = 4.0V
VGE = 3.7V
1.7
1.32
1.28
VGE = 4.0V
1.6
1.24
1.5
1.20
1.16
1.12
1.4
VGE = 5V
VGE = 4.5V
VGE = 8V
VGE = 4.5V
VGE = 5V
VGE = 8V
1.3
1.2
-75 -50 -25
-75 -50 -25
0
25 50 75 100 125 150 175
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE (oC)
TJ, JUNCTION TEMPERTURE (oC)
Figure 5. Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 6. Collector to Emitter On-State Voltage
vs. Junction Temperature
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3
(Continued)
Typical Performance Curves
40
40
30
20
10
0
VGE = 8.0V
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
VGE = 5.0V
VGE = 4.5V
30
VGE = 4.0V
VGE = 3.7V
20
10
0
TJ = -40oC
TJ = 25oC
0
1
2
3
4
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
Figure 8. Collector to Emitter On-State Voltage
vs. Collector Current
40
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGE = 8.0V
VGE = 5.0V
VCE = 5V
VGE = 4.5V
30
30
20
10
0
TJ = -40oC
TJ = 25oC
VGE = 4.0V
TJ = 175oC
VGE = 3.7V
20
10
TJ = 175oC
0
0
1
2
3
4
5
6
0
1
2
3
4
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Collector to Emitter On-State Voltage
vs. Collector Current
Figure 10. Transfer Characteristics
25
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGE = 4.0V
VCE = VGE
= 1mA
I
CE
20
15
10
5
0
25
50
75
100
125
150
175
-50 -25
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. DC Collector Current vs. Case
Temperature
Figure 12. Threshold Voltage vs. Junction
Temperature
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4
(Continued)
Typical Performance Curves
10000
12
10
8
ICE = 6.5A, VGE = 5V, RG = 1KΩ
VECS = 24V
Resistive tOFF
1000
Inductive tOFF
Resistive tON
100
6
10
VCES = 300V
4
1
2
VCES = 250V
0.1
-50 -25
0
25
0
25 50 75 100 125 150 175
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. Leakage Current vs. Junction
Temperature
Figure 14. Switching Time vs. Junction
Temperature
2000
10
f = 1MHz
ICE = 10A, TJ = 25oC
VGE = 0V
1600
8
VCE = 6V
CIES
1200
6
VCE = 12V
800
4
2
0
CRES
400
0
COES
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Collector to Emitter
Voltage
Figure 16. Gate Charge
415
ICER = 10mA
TJ = -40oC
410
405
400
395
TJ = 25oC
TJ = 175oC
6000
10
100
RG, SERIES GATE RESISTANCE (Ω)
1000
Figure 17. Break Down Voltage vs. Series Gate Resistance
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5
Typical Performance Curves
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
P
DM
t
1
0.01
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
θJC C
J
DM
θJC
SINGLE PULSE
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 18. IGBT Normalized Transient Thermal Impedance, Junction to Case
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6
Test Circuit and Waveforms
BV
CER
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7
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
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