FGB20N60SF [ONSEMI]
600 V、20 A、2.2 V、TO-247高速场截止 IGBT;
| 型号： | FGB20N60SF |
| 厂家： | 
ONSEMI |
| 描述： | 600 V、20 A、2.2 V、TO-247高速场截止 IGBT PC 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：688K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2015
FGB20N60SF
600 V, 20 A Field Stop IGBT
Features
General Description
•
•
•
•
•
High Current Capability
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
Low Saturation Voltage: VCE(sat) =2.2 V @ IC = 20 A
High Input Impedance
Fast Switching : EOFF = 8 uJ/A
RoHS Compliant
Applications
•
Solar Inverter, UPS, Welder, PFC
C
COLLECTOR
(FLANGE)
G
G
E
C
D2-PAK
E
Absolute Maximum Ratings
Symbol
Description
Ratings
600
Unit
VCES
Collector to Emitter Voltage
V
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
±20
VGES
V
±30
@ TC = 25oC
@ TC = 100oC
40
A
A
A
IC
ICM (1)
PD
Collector Current
20
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
60
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
208
83
W
W
oC
oC
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.6
Unit
oC/W
oC/W
RθJC
Thermal Resistance, Junction to Case
-
-
RθJA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
40
Notes:
2: Mounted on 1” square PCB(FR4 or G-10 material)
©2010 Fairchild Semiconductor Corporation
FGB20N60SF Rev. 1.5
1
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method
Reel Size
Tape Width
Quantity
FGB20N60SF
FGB20N60SF
D2-PAK
Reel
13” Dia
N/A
800
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA
600
-
-
-
-
V
ΔBVCES
ΔTJ
/
Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 μA
Voltage
0.6
V/oC
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
250
μA
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250 μA, VCE = VGE
4.0
-
5.0
2.2
6.5
2.8
V
V
I
C = 20 A, VGE = 15 V
VCE(sat)
Collector to Emitter Saturation Voltage
I
C = 20 A, VGE = 15 V,
-
2.4
-
V
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
940
110
40
-
-
-
pF
pF
pF
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
16
-
-
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
90
-
ns
V
CC = 400 V, IC = 20 A,
RG = 10 Ω, VGE = 15 V,
24
48
-
ns
Inductive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.37
0.16
0.53
12
mJ
mJ
mJ
ns
-
-
-
16
-
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
95
-
ns
V
CC = 400 V, IC = 20 A,
RG = 10 Ω, VGE = 15 V,
28
-
ns
Inductive Load, TC = 125oC
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
0.4
0.28
0.69
65
-
mJ
mJ
mJ
nC
nC
nC
-
-
-
V
CE = 400 V, IC = 20 A,
Qge
Qgc
7
-
VGE = 15 V
33
-
©2010 Fairchild Semiconductor Corporation
FGB20N60SF Rev. 1.5
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
60
60
TC = 25oC
20V
TC = 125oC
12V
10V
20V
12V
15V
10V
15V
40
40
20
0
VGE = 8V
20
VGE = 8V
0
0.0
1.5
3.0
4.5
6.0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
60
60
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
TC = 125oC
40
40
20
0
20
0
4
6
8
10
12
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
4
3
2
1
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
16
12
8
40A
20A
40A
IC = 10A
4
20A
IC = 10A
0
25
50
75
100
125
0
4
8
12
16
20
Collector-Emitter Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2010 Fairchild Semiconductor Corporation
FGB20N60SF Rev. 1.5
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
16
12
8
40A
20A
12
40A
4
4
20A
IC = 10A
4
IC = 10A
0
0
0
4
8
12
16
20
0
8
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
2500
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
12
2000
300V
VCC = 100V
200V
Cies
9
6
3
0
1500
1000
Coes
500
Cres
0
0.1
0
20
40
60
80
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
100
10μs
100μs
10
1ms
10 ms
tr
DC
Common Emitter
VCC = 400V, VGE = 15V
1
td(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
10
5
IC = 20A
TC = 25oC
TC = 125oC
3. Single Pulse
0.1
1
10
100
1000
0
10
20
30
40
50
60
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [Ω]
©2010 Fairchild Semiconductor Corporation
FGB20N60SF Rev. 1.5
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 14. Turn-on Characteristics vs.
Collector Current
Gate Resistance
200
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
Common Emitter
VCC = 400V, VGE = 15V
100
IC = 20A
TC = 25oC
TC = 125oC
TC = 125oC
td(off)
tr
100
tf
td(on)
10
3
10
0
10
20
30
40
0
10
20
30
40
50
60
Collector Current, IC [A]
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
3
300
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V
VGE = 15V, RG = 10Ω
TC = 25oC
IC = 20A
TC = 25oC
1
TC = 125oC
TC = 125oC
td(off)
100
Eon
Eoff
tf
0.1
10
0
10
20
30
40
50
60
0
10
20
30
40
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
Figure 18. Turn off Switching
SOA Characteristics
80
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
1
Eon
10
Eoff
0.1
Safe Operating Area
VGE = 15V, TC = 125oC
1
0.02
0
10
20
30
40
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
©2010 Fairchild Semiconductor Corporation
FGB20N60SF Rev. 1.5
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
t2
0.01
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FGB20N60SF Rev. 1.5
6
www.fairchildsemi.com
10.67
9.65
10.67
-A-
1.68
1.00
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
0.25 MAX
2
3.80
PLASTIC BODY
STUB
1
3
1
3
1.78
1.14
(2.12)
1.05
5.08
0.99
0.51
M
M
B A
0.25
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
5.08
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
-B-
4.83
4.06
6.22 MIN
1.65
1.14
4
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
GAGE PLANE
0.74
0.25
0.33
ꢄ
ꢃ
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
0.10
B
F) FILENAME: TO263A02REV8
2.79
1.78
ꢄ
ꢃ
0.25 MAX
(5.38)
SEATING
PLANE
'(7$,/ꢀ$ꢁꢀ527$7('ꢀꢂꢃ
SCALE: 2X
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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