FGH40N60SMDF [ONSEMI]
600 V、40 A、1.9 V、TO-247场截止 IGBT;
| 型号： | FGH40N60SMDF |
| 厂家： | 
ONSEMI |
| 描述： | 600 V、40 A、1.9 V、TO-247场截止 IGBT 局域网 PC 栅 双极性晶体管 功率控制 |
| 文件： | 总11页 (文件大小：578K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2013 年 12 月
FGH40N60SMDF
600 V、 40 A 场截止 IGBT
特性
应用
•
•
•
•
•
•
•
•
•
最大结温：TJ=175°C
正温度系数，易于并联运行
高电流能力
太阳能逆变器、 UPS、电焊机、 PFC、电信、 ESS
概述
低饱和电压：VCE(sat)=1.9 V （典型值） @ IC=40 A
高输入阻抗
飞兆半导体的场截止第 2 代 IGBT 新系列采用新型场截止 IGBT
技术，为光伏逆变器、 UPS、焊机、通讯、 ESS 和 PFC 等低导
通和开关损耗至关重要的应用提供最佳性能。
快速开关 EOFF =6.5 μJ/A
紧密的参数分布
符合 RoHS 标准
E
C
C
G
G
集电极
(FLANGE)
E
绝对最大额定值
符号
说明
额定值
600
单位
VCES
VGES
V
V
A
A
A
集电极 - 发射极之间电压
栅极－发射极间电压
集电极电流
± 20
80
@ TC = 25°C
@ TC = 100°C
IC
40
集电极电流
ICM (1)
PD
120
集电极脉冲电流
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
349
174
W
W
最大功耗
最大功耗
TJ
°C
°C
工作结温
-55 至 +175
-55 至 +175
300
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
°C
注意：
1：可重复的额定值：脉宽受最大结温限制
热性能
符号
参数
典型值
最大值
0.43
单位
°C/W
°C/W
°C/W
RJC(IGBT)
RJC（二极管）
RJA
-
-
-
结点 - 壳体的热阻
结点 - 壳体的热阻
结至环境热阻
1.45
40
©2013 飞兆半导体公司
1
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FGH40N60SMDF 修订版 C1
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷尺寸
带宽
数量
FGH40N60SMDF FGH40N60SMDF
TO-247
30
塑料管
不适用
不适用
IGBT 的电气特性 TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0 V， IC = 250 A
GE = 0 V， IC = 250 A
600
-
-
-
-
V
集电极 - 发射极击穿电压
BVCES
TJ
击穿温度系数电压
V
0.6
V/°C
ICES
IGES
VCE = VCES， VGE = 0 V
VGE = VGES， VCE = 0 V
-
-
-
-
250
A
集电极切断电流
±400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 250 A， VCE = VGE
3.5
-
4.6
1.9
6.0
2.5
V
V
G-E 阈值电压
I
C = 40 A, VGE = 15 V
IC = 40 A， VGE = 15 V，
C = 150 °C
VCE(sat)
集电极 - 发射极间饱和电压
-
2.1
-
V
T
动态特性
Cies
-
-
-
1880
180
50
-
-
-
pF
pF
pF
输入电容
VCE = 30 V， VGE = 0 V，
f =1 MHz
Coes
输出电容
Cres
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
20
-
-
ns
ns
导通延迟时间
上升时间
td(off)
tf
92
-
ns
关断延迟时间
下降时间
VCC = 400 V， IC = 40 A，
R
G = 6 ， VGE = 15 V，
13
20
-
ns
感性负载， TC = 25°C
Eon
Eoff
Ets
1.3
0.26
1.56
12
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
-
-
td(on)
tr
td(off)
tf
-
导通延迟时间
上升时间
19
-
ns
97
-
ns
关断延迟时间
下降时间
VCC = 400 V， IC = 40 A，
RG=6 ， VGE = 15 V，
感性负载， TC = 150°C
14
21
-
ns
Eon
Eoff
Ets
2.09
0.44
2.53
119
13
mJ
mJ
mJ
nC
nC
nC
导通开关损耗
关断开关损耗
总开关损耗
-
-
Qg
-
总栅极电荷
V
CE = 400 V， IC = 40 A，
Qge
Qgc
-
栅极－发射极间电荷
栅极－发射极间电荷
VGE = 15 V
58
-
©2013 飞兆半导体公司
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FGH40N60SMDF 修订版 C1
二极管电气特性 TC = 25°C 除非另有说明
符号 参数
测试条件
最小值 典型值 最大值 单位
T
C = 25°C
-
-
-
-
-
-
1.3
1.2
70
1.7
VFM
IF = 20 A
V
二极管正向电压
TC = 150°C
TC = 25°C
TC = 150°C
TC = 25°C
TC = 150°C
90
trr
ns
nC
二极管反向恢复时间
二极管反向恢复电荷
126
207
638
IF = 20 A， diF/dt = 200 A/s
290
Qrr
©2013 飞兆半导体公司
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FGH40N60SMDF 修订版 C1
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
120
120
20V
15V
TC = 25oC
20V
15V
12V
12V
TC = 150oC
10V
10V
90
60
30
90
60
30
0
VGE = 8V
VGE = 8V
0
0
2
4
6
0
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 传输特性
120
120
90
60
30
0
Common Emitter
Common Emitter
VGE = 15V
TC = 25oC
TC = 150oC
VCE = 20V
TC = 25oC
TC = 150oC
90
60
30
0
0
2
4
6
8
10
12
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
图 5. 饱和电压与壳温的关系 （在可变电流强度下）
图 6. 饱和电压与 V 的关系
GE
3.0
20
16
12
8
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
80A
2.5
2.0
40A
40A
80A
1.5
4
IC = 20A
IC = 20A
0
1.0
25
4
8
12
16
20
50
75
100
125
150
Gate-Emitter Voltage, VGE [V]
Case Temperature, TC [oC]
©2013 飞兆半导体公司
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FGH40N60SMDF 修订版 C1
典型性能特征
图 7. 饱和电压与 V 的关系
图 8. 饱和电压与 V 的关系
GE
GE
20
20
16
12
8
Common Emitter
TC = 150oC
Common Emitter
TC = 25oC
16
12
8
40A
80A
80A
4
40A
4
IC = 20A
IC = 20A
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
图 9. 电容特性
图 10. 栅极电荷特性
15
4000
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
12
VCC = 100V
3000
2000
1000
200V
9
6
3
0
Cies
300V
Coes
Cres
0
0.1
0
40
80
120
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
图 11. SOA 特性
图 12. 开启特性与栅极阻抗
300
100
100
10s
tr
100s
1ms
10 ms
DC
10
1
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
*Notes:
1. TC = 25oC
2. TJ = 150oC
IC = 40A
TC = 25oC
TC = 150oC
0.1
0.01
3. Single Pulse
1
1
10
100
1000
0
10
20
30
40
50
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG []
©2013 飞兆半导体公司
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FGH40N60SMDF 修订版 C1
典型性能特征
图 13. 关断特性与栅极电阻的关系
图 14. 开启特性与集电极电流的关系
1000
1000
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
td(off)
TC = 150oC
100
100
10
1
tr
tf
Common Emitter
VCC = 400V, VGE = 15V
10
td(on)
IC = 40A
TC = 25oC
TC = 150oC
1
20
30
40
50
60
70
80
0
10
20
30
40
50
Gate Resistance, RG []
Collector Current, IC [A]
图 15. 关断特性与集电极电流的关系
图 16. 开关损耗与栅极电阻
5
1000
Eon
td(off)
100
1
Eoff
tf
Common Emitter
VCC = 400V, VGE = 15V
10
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 150oC
IC = 40A
TC = 25oC
TC = 150oC
0.1
1
20
0
10
20
30
40
50
30
40
50
60
70
80
Gate Resistance, RG []
Collector Current, IC [A]
图 17. 开关损耗与集电极电流
图 18. 关断开关 SOA 特性
200
6
100
Eon
1
Eoff
10
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 150oC
Safe Operating Area
VGE = 15V, TC = 150oC
0.1
20
1
30
40
50
60
70
80
1
10
100
1000
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
©2013 飞兆半导体公司
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FGH40N60SMDF 修订版 C1
典型性能特征
图 19. 正向特性
图 20. 反向电流
1000
100
TC = 150oC
100
10
TC = 150oC
TC = 75oC
TC = 25oC
TC = 75oC
TC = 25oC
1
10
0.1
TC = 25oC
TC = 75oC ----
0.01
1E-3
TC = 150oC
1
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
图 21. 存储电荷
图 22. 反向恢复时间
120
350
300
250
200
150
100
50
100
200A/s
diF/dt = 100A/s
80
60
40
200A/s
diF/dt = 100A/s
0
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
Forwad Current, IF [A]
Forward Current, IF [A]
图 23. IGBT 的瞬态热阻
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
0.02
0.01
single pulse
Duty Factor, D = t1/t2
0.01
Peak Tj = Pdm x Zthjc + TC
0.006
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2013 飞兆半导体公司
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FGH40N60SMDF 修订版 C1
机械尺寸
图 24. TO-247 3L - TO-247，模塑， 3 引脚， JEDEC 变体 AB
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
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FGH40N60SMDF 修订版 C1
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