FGH4L40T120LQD [ONSEMI]
IGBT, 1200V, 40A, Ultra Field Stop, Fast-switching Co-packed Diode.;
| 型号： | FGH4L40T120LQD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 1200V, 40A, Ultra Field Stop, Fast-switching Co-packed Diode. 双极性晶体管 |
| 文件： | 总11页 (文件大小：433K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IGBT - Ultra Field Stop
1200 V, 40 A, VCE(Sat) = 1.55V,
TO247 4L
FGH4L40T120LQD
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost−effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for motor driver applications. Incorporated into the device
is a soft and fast co−packaged free−wheeling diode with a low forward
voltage.
TO−247−4LD
CASE 340CJ
MARKING DIAGRAM
Features
FGH40T
120LQD
$Y&Z&3&K
• Extremely Efficient Trench with Field Stop Technology
• Maximum Junction Temperature: T = 175°C
J
• Fast and Soft Reverse Recovery Diode
• Optimized for Low V
CE(Sat)
FGH40T120LQD = Specific Device Code
Typical Applications
• Solar Inverter and UPS
• Industrial Switching
• Welding
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
PIN CONNECTIONS
Collector−Emitter Voltage
V
CE
1200
C
Gate−Emitter Voltage
Transient Gate−Emitter Voltage
V
GE
20
30
V
E1: Kelvin Emitter
E2: Power Emitter
Collector Current @ T = 25°C (Note 1)
I
C
80
40
A
C
@ T = 100°C
C
G
Pulsed Collector Current (Note 2)
I
160
160
A
A
A
LM
E1
E2
Pulsed Collector Current (Note 3)
Diode Forward Current
I
CM
I
F
@ T = 25°C (Note 1)
80
40
C
@ T = 100°C
C
ORDERING INFORMATION
Maximum Power Dissipation
P
W
D
@ T = 25°C
306
153
Device
FGH4L40T120LQD
Package
Shipping
30 Units / Rail
C
@ T = 100°C
C
TO−247
Operating Junction and Storage
Temperature Range
T , T
−55 to
+175
°C
°C
J
STG
Maximum Lead Temp. for Soldering
Purposes (1/8″ from case for 5 s)
T
260
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. V = 600 V, V = 15 V, I = 160 A, R = 15 W, Inductive Load, 100% Tested
CC
GE
C
G
3. Repetitive rating: Pulse width limited by max. junction temperature
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
September, 2021 − Rev. 0
FGH4L40T120LQD/D
FGH4L40T120LQD
THERMAL CHARACTERISTICS
Rating
Symbol
Min
−
Typ
0.38
0.64
−
Max
0.49
0.84
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
−
q
JC
R
−
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTIC
Collector−Emitter Breakdown Voltage
V
V
= 0 V, I = 1 mA
BV
CES
1200
−
−
−
V
GE
C
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
DBV
/
−
1.3
V/°C
GE
C
CES
DT
J
Collector−Emitter Cut−Off Current
V
GE
= 0 V, V = 1200 V
I
−
−
−
500
40
−
mA
CE
CES
Gate Leakage Current
V
GE
= 20 V, V = 0 V
I
−
−
200
nA
CE
GES
ON CHARACTERISTIC
Gate−Emitter Threshold Voltage
Collector−Emitter Saturation Voltage
V
= V , I = 40 mA
V
GE(th)
5.5
−
6.5
1.55
2
7.5
1.80
−
V
V
GE
CE
C
V
= 15 V, I = 40 A, T = 25°C
V
CE(sat)
GE
C
J
V
GE
= 15 V, I = 40 A, T = 175°C
−
C
J
DYNAMIC CHARACTERISTIC
Input Capacitance
C
C
−
−
−
−
−
−
5079
113
62
−
−
−
−
−
−
pF
nC
ies
Output Capacitance
V
= 30 V, V = 0 V, f = 1 MHz
GE
oes
CE
Reverse Transfer Capacitance
Gate Charge Total
C
res
Q
227
40
g
Gate−to−Emitter Charge
Gate−to−Collector Charge
Q
Q
V
CC
= 600 V, I = 40 A, V = 15 V
C GE
ge
gc
108
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on Delay Time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
38
13
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
d(on)
Rise Time
t
r
T = 25°C
J
Turn−off Delay Time
t
227
51
d(off)
V
= 600 V, I = 20 A
CC
C
Fall Time
t
f
R = 10 W
g
GE
V
= 15 V
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
0.63
0.77
1.40
42
mJ
ns
Inductive Load
E
ts
t
t
d(on)
t
r
19
T = 25°C
J
Turn−off Delay Time
218
80
d(off)
V
CC
= 600 V, I = 40 A
C
Fall Time
t
f
R = 10 W
g
GE
V
= 15 V
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
on
E
off
1.04
1.35
2.39
mJ
Inductive Load
E
ts
www.onsemi.com
2
FGH4L40T120LQD
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on Delay Time
Test Conditions
Symbol
Min
Typ
Max
Unit
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
32
12
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
d(on)
Rise Time
t
r
T = 175°C
J
Turn−off Delay Time
264
156
1.05
1.62
2.67
36
d(off)
V
CC
= 600 V, I = 20 A
C
Fall Time
t
f
R = 10 W
g
GE
V
= 15 V
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
mJ
ns
Inductive Load
E
ts
t
t
d(on)
t
r
20
T = 175°C
J
Turn−off Delay Time
236
204
1.62
2.51
4.13
d(off)
V
CC
= 600 V, I = 40 A
C
Fall Time
t
f
R = 10 W
g
GE
V
= 15 V
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTIC
E
on
E
off
mJ
V
Inductive Load
E
ts
Forward Voltage
V
GE
= 0 V, I = 40 A, T = 25°C
V
F
−
−
−
−
−
−
−
−
−
−
−
3.31
2.97
126
59
3.80
−
F
J
V
GE
= 0 V, I = 40 A, T = 175°C
F J
Reverse Recovery Energy
E
REC
−
mJ
ns
nC
mJ
ns
nC
mJ
ns
nC
T = 25°C
J
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
I = 40 A, V = 600 V
F
T
rr
−
R
di /dt = 1000 A/ms
F
Q
804
540
115
−
rr
E
REC
−
T = 175°C
J
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
I = 20 A, V = 600 V
F
T
rr
−
R
di /dt = 1000 A/ms
F
Q
2090
667
127
2613
−
rr
E
REC
−
T = 175°C
J
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
T
rr
−
I = 40 A, V = 600 V
F
R
di /dt = 1000 A/ms
F
Q
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH4L40T120LQD
TYPICAL CHARACTERISTICS
160
120
80
160
20 V
15 V 12 V
20 V
15 V
12 V
120
80
10 V
10 V
40
0
40
0
V
4
= 8 V
GE
V
= 8 V
GE
0
1
2
3
4
5
0
1
2
3
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
(TJ = 255C)
(TJ = 1755C)
160
120
80
80
60
V
GE
= 15 V
Common Emitter
V
CE
= 20 V
T = 25°C
J
T = 175°C
J
40
40
0
20
0
T = 175°C
T = 25°C
J
J
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
14
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE EMITTER VOLTAGE (V)
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Typical Transfer Characteristics
3.5
3.0
2.5
2.0
100K
10K
1K
Common Emitter
V
GE
= 15 V
C
C
iss
I
= 80 A
C
oss
100
10
C
rss
I
I
= 40 A
= 25 A
C
C
Common Emitter
f = 1 MHz
1.5
1.0
1
I
C
= 20 A
V
GE
= 0 V
0.1
−100
−50
0
50
100
150
200
0.1
1
10
30
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 5. Saturation Voltage vs. Junction
Temperature
Figure 6. Capacitances Characteristics
www.onsemi.com
4
FGH4L40T120LQD
TYPICAL CHARACTERISTICS
300
15
12
V
CC
= 400 V
100
10
V
CC
= 500 V
10 ms
V
CC
= 600 V
100 ms
9
6
1 ms
10 ms
100
1
T
= 25°C
C
3
0
Single Pulse
T = 175°C
Common Emitter
= 40 A
DC
J
I
C
0.1
0
50
100
150
200
250
1
10
1000
Q , GATE CHARGE (nC)
g
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics (FBSOA)
1000
1000
t
d(off)
V
V
= 600 V
= 15 V
= 40 A
T = 25°C
T = 175°C
J
CC
J
GE
I
C
t
t
f
d(on)
100
10
100
10
t
r
V
V
I
= 600 V
= 15 V
= 40 A
CC
T = 25°C
T = 175°C
J
GE
J
C
0
10
20
30
40
50
0
10
20
30
40
50
R , GATE RESISTANCE (W)
G
R , GATE RESISTANCE (W)
G
Figure 9. Turn−on Characteristics vs. Gate
Figure 10. Turn−off Characteristics vs. Gate
Resistance
Resistance
200
100
500
100
t
d(off)
t
d(on)
t
f
10
1
t
r
V
V
R
= 600 V
= 15 V
= 10 W
V
V
R
= 600 V
= 15 V
= 10 W
CC
CC
GE
GE
G
G
T = 25°C
J
T = 25°C
J
J
J
T = 175°C
T = 175°C
10
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80 90
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Turn−on Characteristics vs.
Figure 12. Turn−off Characteristics vs.
Collector Current
Collector Current
www.onsemi.com
5
FGH4L40T120LQD
TYPICAL CHARACTERISTICS
10
5
10
V
V
= 600 V
= 15 V
= 40 A
V
V
= 600 V
= 15 V
CC
CC
E
off
GE
GE
I
C
I = 40 A
C
R
= 10 W
G
E
off
E
on
1
E
on
T = 25°C
T = 175°C
J
T = 25°C
T = 175°C
J
J
J
0.5
0.1
0
10
20
30
40
50
0
10
20
30
40
50
60
70
80 90
R , GATE RESISTANCE (W)
G
I , COLLECTOR CURRENT (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
80
60
40
50
40
di/dt 1000 A/ms
di/dt 500 A/ms
30
20
T = 175°C
J
T = 25°C
J
20
0
10
0
T = 25°C
T = 175°C
J
J
0
1
2
3
4
0
10
20
30
40
50
60
70
80 90
V , FORWARD VOLTAGE (V)
F
I , FORWARD CURRENT (A)
F
Figure 15. (Diode) Forward Characteristics
Figure 16. (Diode) Reverse Recover Current
vs. Forward Current
200
150
100
4000
3000
2000
T = 25°C
T = 175°C
J
J
di/dt 1000 A/ms
di/dt 1000 A/ms
di/dt 500 A/ms
di/dt 500 A/ms
50
0
1000
0
T = 25°C
T = 175°C
J
J
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80 90
I , FORWARD CURRENT (A)
F
I , FORWARD CURRENT (A)
F
Figure 17. (Diode) Reverse Recovery Time
Figure 18. (Diode) Stored Charge
www.onsemi.com
6
FGH4L40T120LQD
TYPICAL CHARACTERISTICS
1
0.5 Duty Cycle
0.2
Duty Factor, D = t /t
0.1
1
2
P
i:
0.1
0.05
0.02
DM
Peak T = P
x Z
+ T
q
J
DM
JC C
R
R
2
1
t
1
t
2
0.01
0.01
C = t / R
C = t / R
2 2 2
1
1
1
Single Pulse
1
2
3
4
ri [K/W]: 0.01438
0.08956
0.07977
0.09921
T [s]: 1.452E−05 2.162E−04 6.944E−04 3.525E−03
0.001
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
RECTANGULAR PULSE DURATION (sec)
Figure 19. Transient Thermal Impedance of IGBT
1
0.5 Duty Cycle
Duty Factor, D = t /t
1
2
0.2
0.1
P
i:
DM
Peak T = P
x Z
+ T
q
J
DM
JC C
R
R
2
1
t
1
0.1
0.05
0.02
t
2
C = t / R
C = t / R
2 2 2
0.01
1
1
1
1
2
3
4
Single Pulse
ri [K/W]: 0.0291
T [s]:
0.0619
0.1610
0.1572
4.272E−06 5.358E−05 3.408E−04 2.119E−03
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
RECTANGULAR PULSE DURATION (sec)
Figure 20. Transient Thermal Impedance of Diode
www.onsemi.com
7
FGH4L40T120LQD
Figure 21. Test Circuits for Switching Characteristics
Figure 22. Definition of Turn−On Waveforms
www.onsemi.com
8
FGH4L40T120LQD
Figure 23. Definition of Turn−Off Waveforms
www.onsemi.com
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FGH50N6S2D_NL
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247
FAIRCHILD
FGH50N6S2_NL
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明