FGH75T65SHD-F155 [ONSEMI]
IGBT，650V，75A 场截止沟槽;
| 型号： | FGH75T65SHD-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，75A 场截止沟槽 双极性晶体管 |
| 文件： | 总9页 (文件大小：992K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FGH75T65SHD
650 V, 75 A 场截止沟槽 IGBT
特性
概述
ON Semiconductor 场截止第三代 IGBT 新系列采用创新型场截
•
•
•
•
•
•
•
•
•
最大结温：TJ =175°C
正温度系数，易于并联运行
高电流能力
止
IGBT 技术，为光伏逆变器、 UPS、焊机、通讯、 ESS 和
PFC 等低导通和开关损耗至关重要的应用提供最佳性能。
低饱和电压：VCE(sat) =1.6 V( 典型值 )@ IC = 75 A
器件 100% 经过 ILM(1) 测试
高输入阻抗
应用
•
太阳能逆变器、 UPS、电焊机、电信、 ESS 、 PFC
快速开关
紧密的参数分布
符合 RoHS 标准
C
G
G
TO-247
长引脚
C
E
E
绝对最大额定值 TC = 25°C 除非另有说明
符号 描述
FGH75T65SHD-F155
单位
V
VCES
650
± 20
± 30
150
75
集电极－发射极之间电压
栅极－发射极间电压
瞬态栅极－发射极间电压
集电极电流
V
VGES
V
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
A
IC
A
集电极电流
ILM (1)
ICM (2)
225
225
75
A
集电极脉冲电流
集电极脉冲电流
二极管正向电流
二极管正向电流
二极管最大正向脉冲电流
最大功耗
A
@ TC = 25°C
@ TC = 100°C
A
IF
50
A
IFM (2)
PD
225
455
227
A
@ TC = 25°C
@ TC = 100°C
W
W
°C
°C
°C
最大功耗
TJ
工作结温
-55 至 +175
-55 至 +175
300
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
注：
1. V = 400 V, V = 15 V, I = 225 A, R = 20 Ω, 电感负载
CC
GE
C
G
2. 重复额定值：脉宽受最大结温限制
Publication Order Number:
FGH75T65SHDCN/D
©2014 飞兆半导体公司
December-2017, Rev. 3
热性能
FGH75T65SHD-F155
符号
RθJC(IGBT)
RθJC(Diode)
RθJA
参数
单位
°C/W
°C/W
°C/W
0.33
0.65
40
结至外壳热阻最大值
结至外壳热阻最大值
结至环境热阻最大值
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷尺寸
带宽
每管数量
FGH75T65SHD-F155 FGH75T65SHD TO-247 G03
-
-
30
塑料管
IGBT 电气特性 TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0 V, IC = 1 mA
650
-
-
-
-
V
集电极－发射极击穿电压
击穿电压温度系数电压
ΔBVCES
/
I
C = 1 mA, 参考 25°C 数值
0.33
V/°C
ΔTJ
ICES
VCE = VCES, VGE = 0 V
GE = VGES, VCE = 0 V
-
-
-
-
250
μA
集电极切断电流
IGES
V
±400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 75 mA, VCE = VGE
4
-
5.45
1.6
7.5
2.1
V
V
G-E 阈值电压
I
C = 75 A, VGE = 15 V
VCE(sat)
集电极－发射极间饱和电压
I
T
C = 75 A, VGE = 15 V,
C = 175°C
-
2.28
-
V
动态特性
Cies
-
-
-
3680
179
43
-
-
-
pF
pF
pF
输入电容
V
CE = 30 V VGE = 0 V,
,
Coes
输出电容
f = 1 MHz
Cres
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
28
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
导通延迟时间
上升时间
56
td(off)
tf
80
ns
关断延迟时间
下降时间
VCC = 400 V, IC = 75 A,
R
G = 3 Ω, VGE = 15 V,
14.4
2.4
ns
感性负载 , TC = 25°C
Eon
Eoff
Ets
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
导通延迟时间
上升时间
0.72
3.12
26.4
58.4
86.4
13.6
3.7
td(on)
tr
td(off)
tf
ns
ns
关断延迟时间
下降时间
V
CC = 400 V, IC = 75 A,
RG = 3 Ω, VGE = 15 V,
感性负载 , C = 175°C
ns
T
Eon
Eoff
Ets
mJ
mJ
mJ
导通开关损耗
关断开关损耗
总开关损耗
0.98
4.68
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2
IGBT 电气特性 ( 接上页 )
符号 参数
测试条件
最小值 典型值 最大值 单位
Qg
-
-
-
123
22.6
44.9
-
-
-
nC
nC
nC
总栅极电荷
V
CE = 400 V, IC = 75 A,
Qge
Qgc
栅极－发射极间电荷
栅极－集电极间电荷
VGE = 15 V
二极管电气特性
TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
TC = 25°C
-
-
-
-
-
-
-
2.2
1.8
2.8
VFM
IF = 50 A
V
二极管正向电压
TC = 175°C
-
-
-
-
-
-
Erec
trr
TC = 175°C
60
uJ
ns
反向恢复电能
TC = 25°C
TC = 175°C
TC = 25°C
TC = 175°C
43.4
207
87.9
1243
二极管反向恢复时间
IF =50 A, dIF/dt = 200 A/μs
Qrr
nC
二极管反向恢复电荷
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3
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
225
225
TC = 175oC
200
TC = 25oC
200
15V
20V
20V
15V
12V
12V
10V
10V
150
100
50
150
100
50
VGE = 8V
VGE = 8V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 饱和电压与可变电流强度下壳温的关系
225
4
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
200
TC = 25oC
TC = 175oC
150
3
150A
100
50
0
75A
2
IC = 40A
1
-100
0
1
2
3
4
5
-50
0
50
100
150
200
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
16
12
20
16
12
Common Emitter
TC = 175oC
Common Emitter
TC = 25oC
75A
75A
8
8
IC = 40A
150A
150A
IC = 40A
4
0
4
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
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4
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
10000
15
Common Emitter
TC = 25oC
Cies
12
300V
1000
100
VCC = 200V
400V
9
6
3
0
Coes
Cres
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10
1
10
Collector-Emitter Voltage, VCE [V]
0
25
50
75
100
125
30
50
50
Gate Charge, Qg [nC]
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
1000
200
td(off)
tr
100
100
tf
td(on)
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V
10
1
VCC = 400V, VGE = 15V
IC = 75A
TC = 25oC
TC = 175oC
IC = 75A
TC = 25oC
TC = 175oC
10
0
10
20
30
40
50
0
10
20
30
40
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
200
10
100
td(on)
Eon
tr
Common Emitter
VCC = 400V, VGE = 15V
Eoff
Common Emitter
VGE = 15V, RG = 3Ω
IC = 75A
1
TC = 25oC
TC = 175oC
10
5
TC = 25oC
TC = 175oC
0.5
0
25
50
75
100
125
150
0
10
20
30
40
Gate Resistance, RG [Ω]
Collector Current, IC [A]
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5
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
1000
20
10
td(off)
Eon
100
1
tf
10
Common Emitter
Common Emitter
VGE = 15V, RG = 3Ω
TC = 25oC
VGE = 15V, RG = 3Ω
TC = 25oC
Eoff
TC = 175oC
TC = 175oC
1
0.1
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
300
375
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
10μs
100
300
225
150
75
VGE = 15/0V, RG = 3Ω
100μs
1ms
TC = 25oC
TC = 75oC
10 ms
DC
10
TC = 100oC
1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.1
0
1k
1
10
100
1000
10k
100k
1M
Switching Frequency, f[Hz]
Collector-Emitter Voltage, VCE [V]
图 17. 正向特性
图 18. 反向恢复电流
16
300
TC = 25oC
TC = 175oC ---
di/dt = 200A/μs
di/dt = 100A/μs
100
12
8
TJ = 175oC
TJ = 25oC
TJ = 75oC
10
di/dt = 200A/μs
di/dt = 100A/μs
TC = 25oC
TC = 75oC
TC = 175oC
4
4
0
1
0
20
40
60
80
0
1
2
3
5
Forward Voltage, VF [V]
Forward Current, IF [A]
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6
典型性能特征
图 19. 反向恢复时间
图 20. 存储电荷
1500
350
TC = 25oC
TC = 25oC
TC = 175oC ---
TC = 175oC ---
280
1200
900
600
300
0
210
140
di/dt = 100A/μs
di/dt = 200A/μs
di/dt = 200A/μs
di/dt = 100A/μs
70
0
0
20
40
60
80
0
20
40
60
80
Forward Current, IF [A]
Forward Current, IF [A]
图 21. IGBT 的瞬态热阻
0.6
0.5
0.1
0.2
0.1
0.05
0.02
PDM
0.01
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
0.005
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
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7
机械尺寸
图 23. TO-247 3L - TO-247，模塑封装， 3 引脚， JEDEC AB 长引脚
封装图纸是作为一项服务提供给考虑飞兆半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版
本或日期，如有疑问，请联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆半导体全球范围内的条款与条件，尤其是其
中涉及飞兆半导体产品保修的部分。
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8
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