HUF76629D3ST [ONSEMI]
N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，20A，52mΩ;
| 型号： | HUF76629D3ST |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，20A，52mΩ 开关 晶体管 |
| 文件： | 总7页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
HUF76629D3ST-F085
®
N-Channel Logic Level UltraFET Power MOSFET
100V, 20A, 52mΩ
D
Features
Typ r
= 41mΩ at V = 10V, I = 20A
GS D
DS(on)
Typ Q
= 39nC at V = 10V, I = 20A
GS D
g(tot)
G
UIS Capability
RoHS Compliant
Qualified to AEC Q101
S
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
100
V
V
VGS
±16
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
TC = 25°C
C = 25°C
20
ID
A
T
See Figure4
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25oC
(Note 2)
(Note 3)
231
mJ
W
W/oC
oC
oC/W
oC/W
150
1
TJ, TSTG Operating and Storage Temperature
-55 to + 175
RθJC
RθJA
Thermal Resistance Junction to Case
1
Maximum Thermal Resistance Junction to Ambient
52
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
HUF76629D3ST HUF76629D3ST-F085 D-PAK(TO-252)
13”
2500 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting T = 25°C, L = 1.8mH, I = 16A, V = 100V during inductor charging and V = 0V during time in avalanche
J
AS
DD
DD
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating
2
presented here is based on mounting on a 1 in pad of 2oz copper.
©2013 Semiconductor Components Industries, LLC
August-2017, Rev. 3
Publication Order number:
HUF76629D3ST-F085/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
100
-
-
-
-
-
1
V
V
DS=100V, TJ = 25oC
-
-
-
μA
mA
nA
VGS = 0V
TJ = 175oC(Note 4)
1
IGSS
VGS = ±16V
±100
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
1.0
1.6
41
3.0
52
V
TJ = 25oC
-
-
mΩ
mΩ
mΩ
mΩ
I
V
D = 20A,
GS= 10V
TJ = 175oC(Note 4)
TJ = 25oC
102
47
128
55
rDS(on)
Drain to Source On Resistance
ID = 20A,
GS= 4.5V
TJ = 175oC(Note 4)
115
135
V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
1280
214
33
-
-
pF
pF
pF
Ω
V
DS = 25V, VGS = 0V,
Coss
Crss
Rg
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
2.5
39
-
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge
VGS = 0 to 10V
VGS = 0 to 2V
43
3
-
nC
nC
nC
nC
VDD = 50V
ID = 20A
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
2.3
3.5
11
Qgd
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
7
27
-
ns
ns
ns
ns
ns
ns
12
38
5
-
V
DD = 50V, ID = 20A,
VGS = 10V, RGEN = 8.2Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
-
47
Drain-Source Diode Characteristics
I
SD = 20A, VGS = 0V
SD = 10A, VGS = 0V
-
-
-
-
-
-
1.25
1.0
V
VSD
Source to Drain Diode Voltage
I
V
Trr
Reverse Recovery Time
77
221
99
ns
nC
IF = 20A, dISD/dt = 100A/μs,
DD=80V
V
Qrr
Reverse Recovery Charge
305
Notes:
4: The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
www.onsemi.com
2
Typical Characteristics
25
20
15
10
5
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
VGS = 4.5V
0
25
50
T
75
100
125
150
175
0
25
50
75
100
125
150
175
, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
C
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
10
VGS = 10V
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
Typical Characteristics
100
10
1
If R = 0
= (L)(I )/(1.3*RATED BV
100
10
t
- V
)
AV
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
1ms
STARTING TJ = 25oC
STARTING TJ = 150oC
1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
T
= MAX RATED
o
J
100ms
= 25
C
C
0.1
0.001
0.01
0.1
1
10
100
1
10
100
300
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to On Semiconductor Application Notes AN7514 and
AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching Capability
50
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
40
30
20
10
0
VDD = 5V
10
TJ = 175 o
C
TJ = 25 o
C
TJ = 175oC
TJ = 25oC
1
TJ = -55oC
0.1
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
80
50
40
60
40
20
0
30
VGS
10V Top
8V
6V
5V
4.5V
4V Bottom
VGS
10V Top
8V
6V
5V
4.5V
4V Bottom
20
10
80μs PULSE WIDTH
Tj=25oC
80μs PULSE WIDTH
Tj=175oC
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
Typical Characteristics
200
3.0
2.4
1.8
1.2
0.6
0.0
ID = 20A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
150
100
50
TJ = 175oC
ID = 20A
TJ = 25oC
VGS = 10V
0
0
2
4
6
8
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
Figure 12. Normalized Rdson vs Junction
Temperature
1.4
1.2
VGS = VDS
ID = 1mA
I
= 250μA
D
1.2
1.0
0.8
0.6
0.4
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
ID = 20A
8
Ciss
VDD = 40V
1000
6
VDD = 50V
VDD = 60V
Coss
4
2
0
100
Crss
f = 1MHz
VGS = 0V
10
0.1
1
10
100
0
10
20
30
40
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs Drain to Source
Voltage
Figure 16. Gate Charge vs Gate to Source
Voltage
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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