MJF18004 [ONSEMI]
POWER TRANSISTOR; 功率晶体管
| 型号： | MJF18004 |
| 厂家： | 
ONSEMI |
| 描述： | POWER TRANSISTOR |
| 文件： | 总10页 (文件大小：424K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJE18004/D
SEMICONDUCTOR TECHNICAL DATA
NPN Bipolar Power Transistor
*Motorola Preferred Device
For Switching Power Supply Applications
The MJE/MJF18004 have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. This high voltage/high speed transistors offer the following:
POWER TRANSISTOR
5.0 AMPERES
1000 VOLTS
35 and 75 WATTS
•
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
— Fast Switching
FE
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125 C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
•
•
•
•
Two Package Choices: Standard TO–220 or Isolated TO–220
MJF18004, Case 221D, is UL Recognized at 3500 V
: File #E69369
RMS
MAXIMUM RATINGS
Rating
Symbol MJE18004 MJF18004
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
V
450
1000
9.0
CEO
CASE 221A–06
TO–220AB
MJE18004
V
CES
EBO
V
Collector Current — Continuous
— Peak(1)
I
5.0
10
C
I
CM
Base Current — Continuous
— Peak(1)
I
2.0
4.0
Adc
B
I
BM
RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a
V
ISOL
—
—
—
4500
3500
1500
Volts
(for 1 sec, R.H.
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
< 30%, T = 25 C)
A
Total Device Dissipation
Derate above 25 C
(T = 25 C)
C
P
D
75
0.6
35
0.28
Watts
W/ C
Operating and Storage Temperature
T , T
J stg
–65 to 150
C
THERMAL CHARACTERISTICS
Rating
Symbol MJE18004 MJF18004
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
R
1.65
62.5
3.55
62.5
C/W
θJC
θJA
CASE 221D–02
ISOLATED TO–220 TYPE
MJF18004
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
260
C
L
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)
V
450
—
—
—
—
Vdc
µAdc
µAdc
C
CEO(sus)
Collector Cutoff Current (V
= Rated V
, I = 0)
I
CEO
100
CE
CE
CEO
B
Collector Cutoff Current (V
= Rated V
, V
= 0)
(T = 25 C)
I
—
—
—
—
—
—
100
500
100
CES EB
C
CES
(T = 125 C)
C
Collector Cutoff Current (V
= 800 V, V
= 0)
(T = 125 C)
C
CE
EB
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I = 0)
I
—
—
100
µAdc
C
EBO
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
(continued)
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 3
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS — continued (T = 25 C unless otherwise specified)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (I = 1.0 Adc, I = 0.1 Adc)
V
—
—
0.82
0.92
1.1
1.25
Vdc
Vdc
C
B
BE(sat)
Base–Emitter Saturation Voltage (I = 2.0 Adc, I = 0.4 Adc)
C
B
Collector–Emitter Saturation Voltage
(I = 1.0 Adc, I = 0.1 Adc)
V
CE(sat)
0.5
0.6
0.45
0.8
—
—
—
—
—
0.25
0.29
0.3
0.36
0.5
C
B
(T = 125 C)
C
(I = 2.0 Adc, I = 0.4 Adc)
C
B
(T = 125 C)
C
(I = 2.5 Adc, I = 0.5 Adc)
0.75
C
B
DC Current Gain (I = 1.0 Adc, V
= 2.5 Vdc)
= 5.0 Vdc)
= 1.0 Vdc)
h
FE
12
—
14
—
6.0
—
10
21
20
—
32
11
—
—
34
—
—
—
—
—
C
CE
CE
CE
(T = 125 C)
C
DC Current Gain (I = 0.3 Adc, V
C
(T = 125 C)
C
DC Current Gain (I = 2.0 Adc, V
C
7.5
22
(T = 125 C)
C
DC Current Gain (I = 10 mAdc, V
C
= 5.0 Vdc)
CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I = 0.5 Adc, V
= 10 Vdc, f = 1.0 MHz)
f
—
—
—
13
50
—
65
MHz
pF
C
CE
T
Output Capacitance (V
CB
= 10 Vdc, I = 0, f = 1.0 MHz)
C
E
ob
Input Capacitance (V
EB
= 8.0 V)
C
800
1000
pF
ib
Dynamic Saturation Voltage:
V
—
—
6.8
14
—
—
Vdc
CE(dsat)
1.0 µs
3.0 µs
1.0 µs
3.0 µs
(I = 1.0 Adc
C
(T = 125°C)
C
I
I
= 100 mAdc
Determined 1.0 µs and
3.0 µs respectively after
B1
CC
—
—
2.4
5.6
—
—
V
= 300 V)
(T = 125°C)
C
rising I reaches 90% of
B1
final I
B1
—
—
11.3
15.5
—
—
(see Figure 18)
(I = 2.0 Adc
(T = 125°C)
C
C
B1
CC
= 400 mAdc
= 300 V)
—
—
1.3
6.1
—
—
V
(T = 125°C)
C
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
10%, Pulse Width = 20 µs)
Turn–On Time
(I = 1.0 Adc, I = 0.1 Adc,
t
on
—
—
210
180
300
—
ns
µs
ns
µs
ns
µs
ns
C
B1
= 0.5 Adc, V
I
= 300 V)
(T = 125°C)
C
B2
CC
Turn–Off Time
t
off
—
—
1.0
1.3
1.7
—
(T = 125°C)
C
Turn–On Time
Turn–Off Time
Turn–On Time
Storage Time
Fall Time
(I = 2.0 Adc, I = 0.4 Adc,
t
on
—
—
75
90
110
—
C
B1
B1
= 1.0 Adc, V
I
= 300 V)
(T = 125°C)
C
CC
t
off
—
—
1.5
1.8
2.5
—
(T = 125°C)
C
(I = 2.5 Adc, I = 0.5 Adc,
t
on
—
—
450
900
800
1400
C
B2
B1
= 0.5 Adc, V
I
= 250 V)
(T = 125°C)
C
CC
t
s
—
—
2.0
2.2
3.0
3.5
(T = 125°C)
C
t
f
—
—
275
500
400
800
(T = 125°C)
C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T = 25 C unless otherwise specified)
C
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Inductive Load (V
= 300 V, V
CC
= 15 V, L = 200 µH)
clamp
Fall Time
(I = 1.0 Adc, I = 0.1 Adc,
t
fi
—
—
100
100
150
—
ns
µs
ns
ns
µs
ns
ns
µs
ns
C
B1
I
= 0.5 Adc)
(T = 125°C)
C
B2
Storage Time
Crossover Time
Fall Time
t
si
—
—
1.1
1.4
1.7
—
(T = 125°C)
C
t
—
—
180
160
250
—
c
fi
(T = 125°C)
C
(I = 2.0 Adc, I = 0.4 Adc,
t
—
—
90
150
175
—
C
B1
= 1.0 Adc)
I
(T = 125°C)
C
B2
Storage Time
Crossover Time
Fall Time
t
si
—
—
1.7
2.2
2.5
—
(T = 125°C)
C
t
c
—
—
180
250
300
—
(T = 125°C)
C
(I = 2.5 Adc, I = 0.5 Adc,
t
fi
—
—
70
100
130
175
C
B1
I
= 0.5 Adc,
(T = 125°C)
C
B2
V
= –5.0 Vdc)
BE(off)
Storage Time
Crossover Time
t
si
—
—
0.75
1.0
1.0
1.3
(T = 125°C)
C
t
c
—
—
250
250
350
500
(T = 125°C)
C
3
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
100
100
V
= 1 V
V
= 5 V
CE
CE
T
= 125°C
T
T
= 125°C
J
J
T
= –20°C
= –20°C
J
J
T
= 25°C
J
T
= 25°C
10
10
J
1
0.01
1
0.01
0.10
1.00
10.00
0.10
I , COLLECTOR CURRENT (AMPS)
C
1.00
10.00
I
, COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2.0
1.5
1.0
10.00
1.00
T
= 25°C
J
1.5 A
2 A
3 A
4 A
1 A
I
/I = 10
C B
0.10
0.01
0.5
0
I
/I = 5
C B
T
T
= 25°C
= 125°C
J
J
I
= 0.5 A
C
0.01
0.10
1.00
10.00
0.01
0.10
1.00
10.00
I
, BASE CURRENT (AMPS)
I
C,
COLLECTOR CURRENT (AMPS)
B
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
1.1
1.0
10000
1000
100
T
= 25°C
J
C
C
ib
f = 1 MHz
0.9
0.8
0.7
ob
T
= 25°C
J
0.6
0.5
0.4
10
1
T
= 125°C
J
I
/I = 10
C B
I
/I = 5
C B
0.01
0.10
1.00
10.00
1
10
100
I
, COLLECTOR CURRENT (AMPS)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
C
CE
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
4
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
(I
= I /2 for all switching)
B2
C
1800
3000
I
/I = 5
C B
I
V
= I /2
C
B(off)
CC
I
V
= I /2
C
1600
1400
1200
1000
800
600
400
200
0
B(off)
CC
T
T
= 25°C
= 125°C
J
J
T
T
= 25°C
= 125°C
= 300 V
J
J
= 300 V
2500
2000
1500
1000
PW = 20 µs
PW = 20 µs
I
/I = 5
C B
I
/I = 10
C B
I
/I = 10
C B
500
0
0
1
2
3
4
5
0
1
2
3
I , COLLECTOR CURRENT (AMPS)
C
4
5
I
, COLLECTOR CURRENT (AMPS)
C
Figure 7. Resistive Switching, t
Figure 8. Resistive Switching, t
off
on
3500
3000
2500
2000
1500
1000
3500
3000
2500
2000
1500
V
V
I
= 300 V
= 15 V
Z
CC
V
V
I
= 300 V
Z
T
T
= 25°C
= 125°C
J
J
= 15 V
CC
= I /2
= 200 µH
I
/I = 5
B(off)
C
= I /2
C B
B(off)
C
L
C
L
= 200 µH
C
I
= 2 A
C
1000
500
T
T
= 25°C
= 125°C
I
= 1 A
7
J
J
C
500
0
I
/I = 10
C B
0
1
2
3
4
5
3
4
5
6
8
9
10
11
12 13 14
15
I
COLLECTOR CURRENT (AMPS)
h , FORCED GAIN
FE
C
Figure 9. Inductive Storage Time, t
si
Figure 10. Inductive Storage Time, t (h )
si FE
300
250
200
250
200
150
100
T
T
= 25°C
= 125°C
J
J
t
t
c
fi
t
c
150
100
V
V
I
= 300 V
= 15 V
V
V
I
= 300 V
= 15 V
Z
CC
Z
CC
50
0
T
T
= 25°C
= 125°C
50
0
J
J
= I /2
= 200 µH
= I /2
B(off)
C
B(off)
C
t
fi
L
L
= 200
µH
C
C
0
1
2
3
4
5
0
1
2
3
I , COLLECTOR CURRENT (AMPS)
C
4
5
I
, COLLECTOR CURRENT (AMPS)
C
Figure 11. Inductive Switching, t & t , I /I = 5
fi C B
Figure 12. Inductive Switching, t & t , I /I = 10
fi C B
c
c
5
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
(I
= I /2 for all switching)
B2
C
160
150
300
V
V
I
= 300 V
= 15 V
V
V
I
= 300 V
= 15 V
CC
Z
CC
T
T
= 25
= 125
°
C
Z
J
J
°C
I
= 1 A
= I /2
C
= I /2
250
200
150
100
50
B(off)
C
B(off)
C
140
130
120
110
100
90
L
= 200 µH
L
= 200 µH
C
C
I
= 2 A
C
I
= 2 A
C
T
T
= 25°C
= 125°C
J
J
80
70
I
= 1 A
8
C
7
3
4
5
6
9
10 11
12
13 14
15
3
4
5
6
7
8
9
10
11
12 13 14
15
h
, FORCED GAIN
h , FORCED GAIN
FE
FE
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
100
6.0
T
≤ 125°C
/I ≥ 4
= 500 µH
DC (MJE18004)
5 ms
C
I
L
C B
5.0
1 ms
50
µs
10 µs 1 µs
C
10
1.0
4.0
Extended
SOA
3.0
2.0
DC (MJF18004)
0.1
–5 V
1.0
0
V
=
–1.5 V
BE(off)
0 V
0.01
10
100
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
400
500
600
700
800
900
1000
1100
V
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Safe
Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
1.0
down. Safe operating area curves indicate I –V
limits of
C
CE
SECOND
BREAKDOWN
DERATING
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 15 is based
0.8
0.6
0.4
on T = 25°C; T (pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
C
J
10% but must be derated when T ≥ 25°C. Second
C
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on Figure
15 may be found at any case temperature by using the
THERMAL
DERATING
0.2
0
appropriate curve on Figure 17. T (pk) may be calculated
J
from the data in Figures 20 and 21. At any case tempera-
tures, thermal limitations will reduce the power that can be
handled to values less the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn–off with the
base–to–emitter junction reverse biased. The safe level is
specified as a reverse–biased safe operating area (Figure
16). This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode.
20
40
60
80
100
120
C)
140
160
T
, CASE TEMPERATURE (
°
C
Figure 17. Forward Bias Power Derating
6
Motorola Bipolar Power Transistor Device Data
10
5
4
V
CE
90% I
I
C
9
8
7
6
5
C
t
fi
3
dyn 1 µs
t
si
2
dyn 3 µs
1
t
10% I
C
c
V
I
10% V
0
CLAMP
CLAMP
–1
–2
–3
–4
–5
4
90% I
B
90% I
B
1
B
3
2
1
0
1 µs
3 µs
I
B
0
1
2
3
4
5
6
7
8
TIME
TIME
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
I
PEAK
C
100 µF
1
µ
F
MTP8P10
MUR105
MJE210
100
3 W
Ω
150
3 W
Ω
V
PEAK
CE
V
CE
MTP8P10
MPF930
R
R
B1
I
1
B
I
MPF930
+10 V
out
I
B
A
I
2
B
50
Ω
B2
V(BR)CEO(sus)
L = 10 mH
INDUCTIVE SWITCHING
RBSOA
L = 500
COMMON
MTP12N10
150
Ω
L = 200
µH
µH
3 W
RB2 =
∞
RB2 = 0
RB2 = 0
500 µF
V
= 20 VOLTS
V
= 15 VOLTS
V
= 15 VOLTS
CC
(pk) = 100 mA
CC
RB1 SELECTED FOR
DESIRED I
CC
RB1 SELECTED
I
C
1 µF
1
FOR DESIRED I 1
B
B
–V
off
Table 1. Inductive Load Switching Drive Circuit
7
Motorola Bipolar Power Transistor Device Data
TYPICAL THERMAL RESPONSE
1.00
D = 0.5
0.2
P
R
R
(t) = r(t) R
θ
(pk)
θ
θ
JC
JC
JC
°C/W MAX
0.10
0.01
= 1.25
0.1
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
t
0.05
0.02
1
1
t
2
T
– T = P R (t)
(pk) θJC
J(pk)
C
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.10
0.01
1.00
10.00
100.00
1000
10000
100000
t, TIME (ms)
Figure 20. Typical Thermal Response (Z
) for MJE18004
θJC(t)
1.00
D = 0.5
0.2
P
R
R
(t) = r(t) R
θ
(pk)
θ
θ
JC
JC
JC
°C/W MAX
0.10
0.01
0.1
= 3.12
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
0.05
0.02
t
1
1
(t)
t
2
T
– T = P R
(pk) θJC
J(pk)
C
DUTY CYCLE, D = t /t
SINGLE PULSE
1 2
0.01
0.10
1.00
10.00
100.00
1000
t, TIME (ms)
Figure 21. Typical Thermal Response for MJF18004
8
Motorola Bipolar Power Transistor Device Data
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
MOUNTED
FULLY ISOLATED
PACKAGE
FULLY ISOLATED
CLIP
CLIP
PACKAGE
0.107
″
MIN
0.107″ MIN
LEADS
LEADS
LEADS
HEATSINK
0.110 MIN
HEATSINK
HEATSINK
″
Figure 22a. Screw or Clip Mounting Position Figure 22b. Clip Mounting Position
for Isolation Test Number 1 for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4–40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 23a. Screw–Mounted
Figure 23b. Clip–Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
.
torque of 6 to 8 in lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a
constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in lbs will
.
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affecting the pack-
age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
.
in lbs of mounting torque under any mounting conditions.
**For more information about mounting power semiconductors see Application Note AN1040.
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
9
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
SEATING
PLANE
–T–
B
F
C
T
NOTES:
S
4
INCHES
MIN
MILLIMETERS
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
A
K
Q
Z
1
2
3
H
U
L
R
V
T
U
V
J
G
D
Z
0.080
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
SEATING
PLANE
–T–
–B–
C
NOTES:
F
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
Q
H
U
INCHES
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MIN
MAX
0.629
0.402
0.189
0.034
0.129
MIN
15.78
10.01
4.60
MAX
15.97
10.21
4.80
A
0.621
0.394
0.181
0.026
0.121
1
2 3
0.67
0.86
3.08
3.27
–Y–
K
0.100 BSC
2.54 BSC
0.123
0.018
0.500
0.045
0.129
0.025
0.562
0.060
3.13
0.46
3.27
0.64
12.70
1.14
14.27
1.52
G
N
J
0.200 BSC
5.08 BSC
R
0.126
0.107
0.096
0.259
0.134
0.111
0.104
0.267
3.21
2.72
2.44
6.58
3.40
2.81
2.64
6.78
L
D 3 PL
U
M
M
0.25 (0.010)
B
Y
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 221D–02
(ISOLATED TO–220 TYPE)
UL RECOGNIZED: FILE #E69369
ISSUE D
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