MMFT960T1 [ONSEMI]
Power MOSFET 300 mA, 60 Volts; 功率MOSFET 300毫安， 60伏
| 型号： | MMFT960T1 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 300 mA, 60 Volts |
| 文件： | 总8页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMFT960T1
Preferred Device
Power MOSFET
300 mA, 60 Volts
N–Channel SOT–223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc–dc converters,
solenoid and relay drivers. The device is housed in the SOT–223
package which is designed for medium power surface mount
applications.
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement
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300 mA
60 VOLTS
R
= 1.7 W
DS(on)
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
N–Channel
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Non–Repetitive
Drain Current
Symbol
Value
60
Unit
Volts
Volts
mAdc
Watts
G
V
V
DS
S
±30
300
0.8
GS
I
D
MARKING
DIAGRAM
Total Power Dissipation @ T = 25°C
P
D
A
(Note 1.)
Derate above 25°C
6.4
mW/°C
°C
Operating and Storage Temperature
Range
T , T
–65 to
150
J
stg
4
TO–261AA
CASE 318E
STYLE 3
FT960
LWW
1
THERMAL CHARACTERISTICS
2
3
Thermal Resistance –
Junction–to–Ambient
R
156
°C/W
θJA
L
WW
= Location Code
= Work Week
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum
recommended footprint.
PIN ASSIGNMENT
4
Drain
1
2
3
Gate Drain Source
ORDERING INFORMATION
Device
MMFT960T1
Package
Shipping
SOT–223 1000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
November, 2000 – Rev. 4
MMFT960T1/D
MMFT960T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
V
60
–
–
–
–
–
Vdc
µAdc
nAdc
(BR)DSS
(V
GS
= 0, I = 10 µA)
D
Zero Gate Voltage Drain Current
(V = 60 V, V = 0)
I
10
50
DSS
DS GS
Gate–Body Leakage Current
(V = 15 Vdc, V = 0)
I
–
GSS
GS
DS
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
V
1.0
–
–
–
3.5
1.7
Vdc
Ohms
Vdc
GS(th)
DS(on)
DS(on)
(V
DS
= V , I = 1.0 mAdc)
GS
D
Static Drain–to–Source On–Resistance
(V = 10 Vdc, I = 1.0 A)
R
V
GS
D
Drain–to–Source On–Voltage
(V
GS
(V
GS
= 10 V, I = 0.5 A)
–
–
–
–
0.8
1.7
D
= 10 V, I = 1.0 A)
D
Forward Transconductance
(V = 25 V, I = 0.5 A)
g
–
600
–
mmhos
pF
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
–
–
–
65
33
–
–
–
–
–
–
iss
(V
DS
= 25 V, V = 0,
GS
Output Capacitance
Transfer Capacitance
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
C
oss
f = 1.0 MHz)
C
7.0
3.2
1.2
2.0
rss
Q
nC
g
(V
GS
= 10 V, I = 1.0 A,
D
V
Q
gs
gd
= 48 V)
DS
Q
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
5
1
T = 25°C
J
T = 25°C
J
T = -ā55°C
J
4
3
2
1
0
0.8
0.6
0.4
0.2
0
V
= 10 V
GS
T = 125°C
J
8 V
7 V
6 V
5 V
4 V
V
= 10 V
DS
0
2
4
6
8
10
0
2
4
6
8
10
V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
V , GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
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2
MMFT960T1
TYPICAL ELECTRICAL CHARACTERISTICS
5
4
3
2
1
0
10
V
= 10 V
GS
I = 1 A
D
V
GS
= 10 V
T = 125°C
1
J
25°C
-ā55°C
0.1
-ā75
0
0
0
0.5
1
1.5
2
2.5
-ā50
-ā25
0
25
50
75
100
125 150
I , DRAIN CURRENT (AMPS)
D
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On–Resistance versus Drain Current
Figure 4. On–Resistance Variation with Temperature
250
225
200
175
150
125
100
75
V
= 0 V
GS
f = 1 MHz
T = 25°C
J
1
T = 125°C
T = 25°C
J
J
0.1
C
iss
C
oss
50
C
25
0
rss
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
V
SD
, SOURCE-DRAIN DIODE FORWARD VOLTAGE (VOLTS)
V
DS
, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 5. Source–Drain Diode Forward Voltage
Figure 6. Capacitance Variation
10
9
8
7
6
5
4
3
2
1
0
2
1.5
1
V
DS
= 10 V
I
D
= 1 A
T = 25°C
J
V
DS
= 30 V
V
DS
= 48 V
T = -ā55°C
J
25°C
0.5
0
125°C
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
Q , TOTAL GATE CHARGE (nC)
g
I , DRAIN CURRENT (AMPS)
D
Figure 7. Gate Charge versus Gate–to–Source Voltage
Figure 8. Transconductance
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3
MMFT960T1
INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.15
3.8
0.079
2.0
0.248
6.3
0.091
2.3
0.091
2.3
0.079
2.0
inches
mm
0.059
1.5
0.059
1.5
0.059
1.5
SOT-223 POWER DISSIPATION
The power dissipation of the SOT-223 is a function of the
150°C – 25°C
156°C/W
P
=
= 0.8 watts
D
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
The 156°C/W for the SOT-223 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 0.8 watts.
There are other alternatives to achieving higher power
dissipation from the SOT-223 package. One is to increase
the area of the collector pad. By increasing the area of the
collector pad, the power dissipation can be increased.
Although the power dissipation can almost be doubled with
this method, area is taken up on the printed circuit board
which can defeat the purpose of using surface mount
determined by T
temperature of the die, R
, the maximum rated junction
, the thermal resistance from
J(max)
θJA
the device junction to ambient, and the operating
temperature, T . Using the values provided on the data
A
sheet for the SOT-223 package, P can be calculated as
D
follows:
T
– T
A
J(max)
R
P
=
D
θJA
technology. A graph of R
shown in Figure 9.
versus collector pad area is
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T of 25°C,
A
one can calculate the power dissipation of the device which
in this case is 0.8 watts.
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4
MMFT960T1
160
140
Board Material = 0.0625″
GĆ10/FRĆ4, 2 oz Copper
T = 25°C
A
0.8 Watts
°
120
1.5 Watts
1.25 Watts*
100
80
*Mounted on the DPAK footprint
0.0
0.2
0.4
0.6
0.8
1.0
A, Area (square inches)
Figure 9. Thermal Resistance versus Collector
Pad Area for the SOT-223 Package (Typical)
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Cladt. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SOT-223 package should
be the same as the pad size on the printed circuit board, i.e.,
a 1:1 registration.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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5
MMFT960T1
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 10 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK” ZONES 2 & 5
“RAMP”
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT
STEP 7
COOLING
205° TO 219°C
PEAK AT
SOLDER
JOINT
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
200°C
150°C
100°C
5°C
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
100°C
140°C
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 10. Typical Solder Heating Profile
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6
MMFT960T1
PACKAGE DIMENSIONS
SOT–223 (TO–261)
CASE 318E–04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
2
INCHES
DIM MIN MAX
MILLIMETERS
S
B
MIN
6.30
3.30
1.50
0.60
2.90
2.20
0.020
0.24
1.50
0.85
0
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
1
3
A
B
C
D
F
0.249
0.130
0.060
0.024
0.115
0.087
0.263
0.145
0.068
0.035
0.126
0.094
D
G
H
J
L
0.0008 0.0040
G
0.009
0.060
0.033
0
0.014
0.078
0.041
10
J
K
L
C
M
S
_
_
_
_
0.08 (0003)
0.264
0.287
6.70
7.30
M
H
K
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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7
MMFT960T1
Thermal Clad is a registered trademark of the Bergquist Company.
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
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MMFT960T1/D
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