NDF06N60ZH [ONSEMI]
暂无描述;NDF06N60Z, NDP06N60Z
N-Channel Power MOSFET
0.98 W, 600 Volts
Features
• Low ON Resistance
• Low Gate Charge
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• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
V
DSS
R
(TYP) @ 3 A
DS(ON)
Applications
600 V
0.98 Ω
• Adapter (Notebook, Printer, Gaming)
• LCD Panel Power
N−Channel
• Lighting Ballasts
D (2)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol NDF06N60Z NDP06N60Z Unit
Drain−to−Source Voltage
Continuous Drain Current
Continuous Drain Current
V
600 (Note 1)
6.0 (Note 2)
3.8 (Note 2)
V
A
A
DSS
I
D
G (1)
I
D
T = 100°C
A
S (3)
Pulsed Drain Current,
I
20 (Note 2)
A
TO−220FP
CASE 221D
STYLE 1
DM
V
GS
@ 10 V
MARKING
DIAGRAM
Power Dissipation (Note 1)
P
31
113
W
V
D
Gate−to−Source Voltage
V
30
GS
Single Pulse Avalanche
Energy, L = 6.3 mH,
E
AS
113
mJ
I
D
= 6.0 A
ESD (HBM)
(JESD 22−114−B)
V
3000
V
V
NDF06N60ZG
or
NDP06N60ZG
AYWW
esd
ISO
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T = 25°C) (Figure 13)
A
V
4500
−
Gate
Source
TO−220AB
CASE 221A
STYLE 5
Peak Diode Recovery
dv/dt
4.5 (Note 3)
6.0
V/ns
A
Continuous Source
I
S
Current (Body Diode)
Drain
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
T
300
260
°C
L
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
T
PKG
Operating Junction and
T , T
−55 to 150
°C
J
stg
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
TO−220FP
TO−220AB
Shipping
50 Units/Rail
In Development
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
NDF06N60ZG
NDP06N60ZG
2. Limited by maximum junction temperature
3. I = 6.0 A, di/dt ≤ 100 A/ms, V ≤ BV
, T = +150°C
J
SD
DD
DSS
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
June, 2009 − Rev. 0
NDF06N60Z/D
NDF06N60Z, NDP06N60Z
THERMAL RESISTANCE
Parameter
Symbol
NDF06N60Z
NDP06N60Z
Unit
Junction−to−Case (Drain)
R
4.0
50
1.1
50
°C/W
q
JC
Junction−to−Ambient Steady State (Note 4)
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I = 1 mA
BV
DSS
600
V
D
Breakdown Voltage Temperature
Coefficient
Reference to 25°C,
= 1 mA
DBV
DT
/
0.6
V/°C
DSS
I
D
J
Drain−to−Source Leakage Current
25°C
I
1
mA
DSS
V
DS
= 600 V, V = 0 V
GS
150°C
50
10
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 5)
V
GS
=
20 V
I
mA
GSS
Static Drain−to−Source
On−Resistance
V
= 10 V, I = 3.0 A
R
DS(on)
0.98
5.0
1.2
4.5
W
GS
D
Gate Threshold Voltage
V
DS
= V , I = 250 mA
V
GS(th)
3.0
V
S
GS
D
Forward Transconductance
V
= 15 V, I = 3.0 A
g
FS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
923
106
23
pF
nC
iss
V
DS
= 25 V, V = 0 V,
f = 1.0 MHz
GS
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
31
g
V
DD
= 300 V, I = 6.0 A,
D
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Gate Resistance
Q
6.3
17
gs
gd
V
GS
= 10 V
Q
R
3.2
W
g
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
t
13
17
30
28
ns
d(on)
Rise Time
t
r
V
V
= 300 V, I = 6.0 A,
D
DD
= 10 V, R = 5 Ω
GS
G
Turn−Off Delay Time
Fall Time
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
= 6.0 A, V = 0 V
V
SD
1.6
V
S
GS
t
rr
338
2.0
ns
mC
V
= 0 V, V = 30 V
DD
GS
I
S
= 6.0 A, di/dt = 100 A/ms
Q
rr
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
NDF06N60Z, NDP06N60Z
TYPICAL CHARACTERISTICS
12
12
7 V
6.8 V
T = 25°C
J
V
DS
≥ 30 V
10 V
6.6 V
6.4 V
10
8
10
8
15 V
6.2 V
6.0 V
6
6
T = 150°C
J
T = 25°C
J
4
4
5.8 V
5.6 V
2
2
0
T = −55°C
J
0
0
5
10
15
20
25
3
0
0
4
5
6
7
8
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2
1.75
1.5
I
D
= 3 A
T = 25°C
J
T = 25°C
J
1.5
1
1.25
1
V
= 10 V
GS
0.5
0
0.75
0.5
5
6
7
8
9
10
2
4
6
8
10
12
V
GS
(V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6
2.2
1.8
1.4
1.0
0.6
0.2
10,000
1000
V
= 0 V
I
V
= 3 A
= 10 V
GS
D
GS
T = 150°C
J
100
10
T = 100°C
J
−50 −25
0
25
50
75
100
125 150
100
200
300
400
500
600
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NDF06N60Z, NDP06N60Z
TYPICAL CHARACTERISTICS
2000
1500
1000
500
0
20
400
300
200
V
= 0 V
GS
T = 25°C
J
QT
15
10
V
DS
C
iss
Qgs
Qgd
V
GS
C
5
0
100
0
oss
T = 25°C
= 6 A
J
C
rss
I
D
0
50
100
150
200
0
5
10
15
20
25
30
35
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
6
V
= 300 V
= 6 A
= 10 V
V
= 0 V
DD
GS
I
D
T = 25°C
J
5
4
3
2
V
GS
t
d(off)
t
t
r
f
t
d(on)
10
1
1
0
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
1 ms
100 ms
10 ms
10
1
dc
V
GS
= 10 V
Single Pulse
= 25°C
T
C
0.1
0.01
R
Limit
DS(on)
Thermal Limit
Package Limit
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area for NDF06N60Z
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4
NDF06N60Z, NDP06N60Z
TYPICAL CHARACTERISTICS
10
1.0
0.1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 12. Thermal Impedance for NDF06N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
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5
NDF06N60Z, NDP06N60Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
SEATING
−T−
PLANE
−B−
C
F
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
Q
H
U
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1.00
3.28
1
2 3
G
H
J
0.100 BSC
2.54 BSC
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
−Y−
K
K
L
12.78
1.23
13.73
1.47
N
Q
R
S
U
0.200 BSC
5.08 BSC
G
N
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
J
R
L
D 3 PL
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
M
M
0.25 (0.010)
B
Y
TO−220AB
CASE 221A−09
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
INCHES
DIM MIN MAX
MILLIMETERS
T
S
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
4
1
A
K
Q
Z
2
3
G
H
J
U
H
K
L
N
Q
R
S
T
L
R
V
U
V
Z
J
G
0.080
2.04
D
STYLE 5:
PIN 1. GATE
2. DRAIN
N
3. SOURCE
4. DRAIN
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NDF06N60Z/D
相关型号:
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