NDF08N50Z [ONSEMI]
N-Channel Power MOSFET 500 V, 0.69 ; N沟道功率MOSFET的500 V， 0.69 ？
| 型号： | NDF08N50Z |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 500 V, 0.69 |
| 文件： | 总6页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NDF08N50Z, NDP08N50Z
N-Channel Power MOSFET
500 V, 0.69 W
Features
• Low ON Resistance
• Low Gate Charge
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• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
V
DSS
R
(TYP) @ 3.6 A
DS(ON)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
500 V
0.69 W
Rating
Symbol NDF08N50Z NDP08N50Z Unit
Drain−to−Source Voltage
V
500
7.5 (Note 1)
V
A
DSS
N−Channel
Continuous Drain Current
R
I
D
7.5
4.7
30
D (2)
q
JC
Continuous Drain Current
I
D
4.7 (Note 1)
30 (Note 1)
31
A
A
R
q
JC
T = 100°C
A
Pulsed Drain Current,
@ 10 V
I
DM
G (1)
V
GS
Power Dissipation
P
125
W
V
D
Gate−to−Source Voltage
Single Pulse Avalanche
V
30
GS
S (3)
TO−220FP
CASE 221D
STYLE 1
E
190
mJ
AS
Energy, I = 7.5 A
MARKING
DIAGRAM
D
ESD (HBM)
(JESD 22−A114)
V
3500
V
V
esd
RMS Isolation Voltage
V
4500
ISO
(t = 0.3 sec., R.H. ≤ 30%,
T = 25°C) (Figure 14)
A
NDF08N50ZG
or
NDP08N50ZG
AYWW
Peak Diode Recovery
dv/dt
4.5
7.5
V/ns
A
Continuous Source
Current (Body Diode)
I
S
Maximum Temperature for
Soldering Leads
T
260
°C
°C
Gate
Source
L
TO−220AB
CASE 221A
STYLE 5
Operating Junction and
Storage Temperature Range
T , T
−55 to 150
J
stg
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
1. Limited by maximum junction temperature
2. I = 7.5 A, di/dt ≤ 100 A/ms, V ≤ BV
, T = +150°C
J
SD
DD
DSS
ORDERING INFORMATION
Device
Package
TO−220FP
TO−220AB
Shipping
NDF08N50ZG
NDP08N50ZG
50 Units/Rail
In Development
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2010 − Rev. 1
NDF08N50Z/D
NDF08N50Z, NDP08N50Z
THERMAL RESISTANCE
Parameter
Symbol
NDF08N50Z
NDP08N50Z
Unit
Junction−to−Case (Drain)
R
4.0
50
1.0
50
°C/W
q
JC
Junction−to−Ambient Steady State (Note 3)
R
q
JA
3. Insertion mounted
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I = 1 mA
BV
DSS
500
V
D
Breakdown Voltage Temperature
Coefficient
Reference to 25°C,
= 1 mA
DBV
DT
/
0.6
V/°C
DSS
I
D
J
Drain−to−Source Leakage Current
25°C
I
1
mA
DSS
V
DS
= 500 V, V = 0 V
GS
150°C
50
10
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 4)
V
GS
=
20 V
I
mA
GSS
Static Drain−to−Source
On−Resistance
V
= 10 V, I = 3.6 A
R
DS(on)
0.69
6.0
0.85
4.5
W
GS
D
Gate Threshold Voltage
V
DS
= V , I = 100 mA
V
GS(th)
3.0
V
S
GS
D
Forward Transconductance
V
DS
= 15 V, I = 3.75 A
g
FS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
912
120
27
pF
nC
iss
V
DS
= 25 V, V = 0 V,
f = 1.0 MHz
GS
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
31
g
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Q
Q
6.2
17
gs
V
DD
= 250 V, I = 7.5 A,
D
V
GS
= 10 V
gd
GP
V
6.3
3.0
V
Gate Resistance
R
W
g
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
13
23
31
29
ns
d(on)
Rise Time
t
r
V
V
= 250 V, I = 7.5 A,
D
DD
= 10 V, R = 5 W
GS
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Diode Forward Voltage
I
S
= 7.5 A, V = 0 V
V
SD
1.6
V
GS
Reverse Recovery Time
t
295
ns
mC
rr
V
= 0 V, V = 30 V
DD
GS
I
S
= 7.5 A, di/dt = 100 A/ms
Reverse Recovery Charge
Q
1.85
rr
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
NDF08N50Z, NDP08N50Z
TYPICAL CHARACTERISTICS
20.0
18.0
16.0
14.0
12.0
10.0
8.0
20.0
V
DS
= 25 V
18.0
16.0
14.0
12.0
10.0
8.0
8.0 V
7.0 V
6.5 V
V
GS
= 10 V
T = 25°C
J
6.0 V
6.0
6.0
T = 150°C
J
4.0
4.0
T = −55°C
5.5 V
5.0 V
20.0
J
2.0
2.0
0.0
0.0
0.0
5.0
10.0
15.0
25.0
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
V = 10 V
GS
J
I
= 3.6 A
D
T = 25°C
T = 25°C
J
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
10
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Region versus Gate−to−Source
Figure 4. On−Resistance versus Drain
Voltage
Current and Gate Voltage
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
1.15
1.10
1.05
1.00
0.95
0.90
I
= 1 mA
I
V
= 3.6 A
D
D
= 10 V
GS
−50 −25
0
25
50
75
100 125 150
−50 −25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. BVDSS Variation with Temperature
Temperature
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3
NDF08N50Z, NDP08N50Z
TYPICAL CHARACTERISTICS
2000
1800
1600
1400
1200
1000
800
10
1.0
T = 25°C
J
V
GS
= 0 V
T = 150°C
J
f = 1 MHz
C
iss
T = 125°C
J
600
400
C
oss
200
C
rss
0
0.10
0
50 100 150 200 250 300 350 400 450 500
0
5
10 15 20 25 30 35 40 45 50
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
Figure 8. Capacitance Variation
versus Voltage
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
300
250
200
Q
T
V
DS
V
GS
150
100
50
Q
Q
GD
GS
V
I
= 250 V
DS
= 7.5 A
T = 25°C
D
J
0
0
4
8
12
16
20
24
28
32
Q , TOTAL GATE CHARGE (nC)
Figureg9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
100
10
10.0
V
I
V
= 250 V
= 7.5 A
DD
D
= 10 V
GS
t
d(off)
T = 150°C
J
t
t
r
f
125°C
1.0
0.1
t
d(on)
25°C
−55°C
1.0
1
10
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
, SOURCE−TO−DRAIN VOLTAGE (V)
R , GATE RESISTANCE (W)
G
V
SD
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
NDF08N50Z, NDP08N50Z
TYPICAL CHARACTERISTICS
100
10
V
v 30 V
GS
1 ms
SINGLE PULSE
100 ms 10 ms
10 ms
T
C
= 25°C
dc
R
1
0.1
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF08N50Z
10
1.0
0.1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.01
SINGLE PULSE
R
Steady State
= 4.0°C/W
q
JC
0.001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 13. Thermal Impedance (Junction−to−Case) for NDF08N50Z
LEADS
HEATSINK
0.110″ MIN
Figure 14. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NDF08N50Z, NDP08N50Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
−B−
C
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
1.00
3.28
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
G
H
J
0.100 BSC
2.54 BSC
−Y−
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
STYLE 1:
PIN 1. GATE
2. DRAIN
M
M
0.25 (0.010)
B
Y
3. SOURCE
TO−220
CASE 221A−09
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
ISSUE AF
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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NDF08N50Z/D
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