NGB15N41CLT4 [ONSEMI]
Ignition IGBT 15 Amps, 410 Volts; 点火IGBT 15安培， 410伏
| 型号： | NGB15N41CLT4 |
| 厂家： | 
ONSEMI |
| 描述： | Ignition IGBT 15 Amps, 410 Volts |
| 文件： | 总12页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
N−Channel DPAK, D2PAK and TO−220
http://onsemi.com
15 AMPS
410 VOLTS
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
• Ideal for Coil−on−Plug Applications
C
• DPAK Package Offers Smaller Footprint and Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
R
G
G
• Integrated ESD Diode Protection
R
GE
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
E
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
4
DPAK
CASE 369C
STYLE 2
• Low Saturation Voltage
• High Pulsed Current Capability
2
1
3
• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R
)
GE
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
2
4
D PAK
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Symbol Value
Unit
CASE 418B
STYLE 4
1
2
V
CES
V
CER
440
440
15
V
DC
3
V
DC
V
DC
V
GE
4
Collector Current−Continuous
I
C
15
50
A
DC
A
AC
@ T = 25°C − Pulsed
C
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
kV
TO−220AB
CASE 221A
STYLE 9
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
V
Total Power Dissipation @ T = 25°C
P
D
107
Watts
C
Derate above 25°C
0.71
W/°C
1
2
3
Operating and Storage Temperature Range
T , T
−55 to
+175
°C
J
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
March, 2004 − Rev. 5
NGD15N41CL/D
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T ≤ 175°C)
J
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
E
AS
mJ
V
CC
V
CC
= 50 V, V = 5.0 V, Pk I = 16.6 A, L = 1.8 mH, Starting T = 25°C
250
200
GE
L
J
= 50 V, V = 5.0 V, Pk I = 15 A, L = 1.8 mH, Starting T = 125°C
GE
L
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
1.4
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
°C/W
θ
JC
JA
JA
JA
L
DPAK (Note 1)
R
R
R
100
50
θ
θ
θ
2
D PAK (Note 1)
TO−220
62.5
275
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
T
°C
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BV
I
C
= 2.0 mA
= 10 mA
T = −40°C to
380
380
410
410
440
440
V
DC
CES
J
150°C
I
C
T = −40°C to
J
150°C
T = 25°C
−
−
2.0
10
1.0
0.7
12
0.1
33
36
31
13
20
40*
10
Zero Gate Voltage Collector Current
I
µA
DC
J
CES
V
V
= 350 V,
CE
T = 150°C
J
= 0 V
GE
T = −40°C
J
−
T = 25°C
J
−
2.0
25*
1.0
37
Reverse Collector−Emitter Leakage Current
Reverse Collector−Emitter Clamp Voltage
I
mA
ECS
V
= −24 V
CE
T = 150°C
J
−
T = −40°C
J
−
T = 25°C
J
27
30
25
11
B
V
V
VCES(R)
DC
I
C
= −75 mA
= 5.0 mA
T = 150°C
J
40
T = −40°C
J
35
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
Gate Emitter Resistor
BV
I
G
T = −40°C to
15
GES
J
DC
150°C
I
V
= 10 V
T = −40°C to
384
−
640
70
1000
−
µA
DC
GES
GE
J
150°C
R
−
−
T = −40°C to
Ω
G
J
150°C
R
T = −40°C to
J
10
16
26
Ω
k
GE
150°C
ON CHARACTERISTICS (Note 2)
T = 25°C
1.1
0.75
1.2
−
1.4
1.0
1.6
3.4
1.9
1.4
2.1*
−
Gate Threshold Voltage
V
V
DC
J
GE(th)
I
= 1.0 mA,
C
V
T = 150°C
J
= V
GE
CE
T = −40°C
J
Threshold Temperature Coefficient
(Negative)
−
−
−
mV/°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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2
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
ELECTRICAL CHARACTERISTICS (continued)
Characteristic Symbol
ON CHARACTERISTICS (continued) (Note 3)
Test Conditions
Temperature
Min
Typ
Max
Unit
T = 25°C
1.0
0.9
1.1
1.3
1.2
1.4
1.4
1.5
1.4
1.3
1.3
1.4
8.0
1.6
1.5
1.65
1.8
1.7
1.8
2.0
2.0
2.0
1.9
1.9
1.95
15
1.8
1.8
Collector−to−Emitter On−Voltage
V
V
J
CE(on)
DC
I
V
= 6.0 A,
C
T = 150°C
J
= 4.0 V
GE
T = −40°C
J
1.9*
2.0*
1.9
T = 25°C
J
I
C
= 8.0 A,
T = 150°C
J
V
= 4.0 V
GE
T = −40°C
J
2.0*
2.2
T = 25°C
J
I
V
= 10 A,
C
T = 150°C
J
2.3*
2.2
= 4.0 V
GE
T = −40°C
J
T = 25°C
J
2.1
I
V
= 10 A,
C
T = 150°C
J
2.1
= 4.5 V
GE
T = −40°C
J
2.1*
25
Forward Transconductance
gfs
V
= 5.0 V, I = 6.0 A
T = −40°C to
Mhos
pF
CE
C
J
150°C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
400
30
650
55
1000
100
8.0
ISS
V
= 25 V, V = 0 V
f = 1.0 MHz
T = −40°C to
CC
GE
J
Output Capacitance
C
C
OSS
RSS
150°C
Transfer Capacitance
3.0
4.5
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Inductive)
T = 25°C
−
−
−
−
−
−
−
−
−
−
−
−
4.0
4.5
6.0
10
10
10
12
12
10
10
15
15
4.0
4.0
7.0
7.0
t
V
= 300 V, I = 6.5 A
= 1.0 kΩ, L = 300 µH
µSec
µSec
µSec
J
d(off)
CC
C
R
G
T = 150°C
J
T = 25°C
J
Fall Time (Inductive)
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−On Delay Time
Rise Time
t
f
V
CC
= 300 V, I = 6.5 A
C
R
= 1.0 kΩ, L = 300 µH
G
T = 150°C
J
T = 25°C
J
3.0
3.5
8.0
12
t
V
CC
= 300 V, I = 6.5 A
d(off)
C
R
= 1.0 kΩ, R = 46 Ω,
G
L
T = 150°C
J
T = 25°C
J
t
f
V
CC
= 300 V, I = 6.5 A
C
R
= 1.0 kΩ, R = 46 Ω,
G
G
G
L
T = 150°C
J
T = 25°C
J
0.7
0.7
4.0
5.0
t
V
R
= 10 V, I = 6.5 A
d(on)
CC
C
= 1.0 kΩ, R = 1.5 Ω
L
T = 150°C
J
T = 25°C
J
t
r
V
R
= 10 V, I = 6.5 A
CC
C
= 1.0 kΩ, R = 1.5 Ω
L
T = 150°C
J
3. Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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3
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
50
40
30
20
10
0
60
V
= 10 V
V
= 10 V
5 V
GE
GE
5 V
4.5 V
50
40
30
20
10
0
4.5 V
4 V
4 V
3.5 V
T = 25°C
T = −40°C
J
J
3.5 V
3 V
3 V
2.5 V
7
2.5 V
7
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
30
60
50
40
30
20
10
0
V
CE
= 10 V
V
GE
= 10 V
25
20
15
10
5 V
4.5 V
T = 150°C
J
4 V
3.5 V
3 V
T = 25°C
J
2.5 V
5
0
T = 150°C
J
T = −40°C
J
0
0.5
V
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
, GATE TO EMITTER VOLTAGE (VOLTS)
GE
Figure 3. Output Characteristics
Figure 4. Transfer Characteristics
4.0
3.5
3
V
GE
= 5 V
T = 25°C
J
I
C
= 25 A
2.5
I
C
= 15 A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 20 A
= 15 A
= 10 A
C
I
= 10 A
C
2
1.5
1
I
C
I
= 5 A
C
I
C
I
= 5 A
C
0.5
0
−50
−25
0
25
50
75
100
125 150
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
GATE TO EMITTER VOLTAGE (VOLTS)
Figure 5. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
Figure 6. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
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4
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
10000
3
2.5
2
T = 150°C
J
I
= 15 A
C
C
1000
100
10
iss
I
= 10 A
= 5 A
C
C
oss
I
C
1.5
1
C
rss
1
0
0.5
0
0
20
40 60 80 100 120 140 160 180 200
3
4
5
6
7
8
9
10
GATE TO EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
Figure 8. Capacitance Variation
30
25
20
15
10
5
2
V
V
R
= 50 V
= 5 V
= 1000 Ω
1.8
1.6
1.4
1.2
CC
GE
Mean
Mean + 4 σ
Mean − 4 σ
G
L = 2 mH
L = 3 mH
1
0.8
0.6
0.4
L = 6 mH
0.2
0
0
−50 −30 −10 10
30 50 70 90 110 130 150
−50 −25
0
25
50
75 100 125 150 175
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage versus
Temperature
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
12
10
8
30
25
20
15
10
5
V
V
R
= 300 V
= 5 V
= 1000 Ω
V
V
R
= 50 V
= 5 V
= 1000 Ω
CC
GE
CC
GE
G
G
I
C
= 10 A
L = 2 mH
t
L = 300 µH
f
6
4
2
0
L = 3 mH
L = 6 mH
t
d(off)
0
−50 −25
0
25
50
75 100 125 150 175
−50 −30 −10
10
30
50 70 90 110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
Figure 12. Inductive Switching Fall Time
versus Temperature
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5
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
10
Duty Cycle = 0.5
0.2
0.1
1
0.05
0.02
0.01
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T
P
(pk)
1
Single Pulse
t
1
t
2
T
J(pk)
− T = P R
(pk) θJA
(t)
A
R
R(t) for t ≤ 0.2 s
θ
JC
DUTY CYCLE, D = t /t
1
2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t,TIME (S)
Figure 13. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on
fixture in Figure 14)
1.5″
4″
4″
0.125″
4″
Figure 14. Test Fixture for Transient Thermal Curve
(48 square inches of 1/8, thick aluminum)
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6
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
100
10
100
DC
10
DC
100 µs
1 ms
100 µs
1
1
0.1
10 ms
1 ms
100 ms
100
10 ms
0.1
100 ms
0.01
0.01
1
10
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 15. Single Pulse Safe Operating Area
Figure 16. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 255C)
(Mounted on an Infinite Heatsink at TA = 1255C)
100
10
100
10
t = 1 ms, D = 0.05
1
t = 1 ms, D = 0.05
1
t = 2 ms, D = 0.10
1
t = 2 ms, D = 0.10
1
t = 3 ms, D = 0.30
1
t = 3 ms, D = 0.30
1
1
1
I
(pk)
I
(pk)
t
1
t
1
0.1
0.1
t
2
t
2
DUTY CYCLE, D = t /t
DUTY CYCLE, D = t /t
1
2
1
2
0.01
0.01
1
10
100
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 17. Pulse Train Safe Operating Area
Figure 18. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
(Mounted on an Infinite Heatsink at TC = 1255C)
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7
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
ORDERING INFORMATION
Device
Package Type
DPAK
Shipping
75 Units/Rail
NGD15N41CL
NGD15N41CLT4
NGB15N41CLT4
NGP15N41CL
DPAK
2500/Tape & Reel
800/Tape & Reel
50 Units/Rail
2
D PAK
TO−220
MARKING DIAGRAMS
2
TO−220AB
CASE 221A
STYLE 9
DPAK
CASE 369C
STYLE 7
D PAK
CASE 418B
STYLE 4
4
Collector
4
Collector
1
Gate
4
Gx15N41
YWW
2
Gx15N41
YWW
Gx15N41
YWW
Collector
Collector
3
1
Gate
3
1
Gate
3
Emitter
Emitter
Emitter
2
Collector
2
Collector
Gx15N41 = Device Code
x
Y
= D, B, or P
= Year
WW
= Work Week
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8
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
B
F
T
S
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
2
3
U
H
G
H
J
K
L
L
R
N
Q
R
S
T
V
J
G
D
U
V
Z
N
0.080
2.04
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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9
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
SEATING
−T−
PLANE
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
STYLE 2:
PIN 1. GATE
2. DRAIN
G
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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10
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
−B−
W
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
K
L
W
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
J
G
M
N
P
R
S
V
H
D 3 PL
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
M
T B
0.13 (0.005)
STYLE 4:
PIN 1. GATE
2. COLLECTOR
VARIABLE
CONFIGURATION
ZONE
3. EMITTER
4. COLLECTOR
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
10.66
0.42
1.016
0.04
6.096
0.24
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
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