NHP620LFST1G [ONSEMI]

6 A,200 V,平面 Ultrafast 整流器,LFPAK 封装;
NHP620LFST1G
型号: NHP620LFST1G
厂家: ONSEMI    ONSEMI
描述:

6 A,200 V,平面 Ultrafast 整流器,LFPAK 封装

文件: 总6页 (文件大小:327K)
中文:  中文翻译
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NHP620LFS, NRVHP620LFS  
Switch-mode  
Power Rectifiers  
This LFPAK ultrafast rectifier provides fast switching performance  
with soft recovery in a compact thermally efficient package. The  
LFPAK package provides an excellent alternative to the DPAK,  
offering thermal performance nearly as good in a package occupying  
less than half the board space. Its low profile makes it a good option  
for flat panel display and other applications with limited vertical  
clearance. The device offers low leakage over temperature making it a  
good match for applications requiring low quiescent current.  
www.onsemi.com  
ULTRAFAST RECTIFIERS  
6 AMPERES  
Features  
200 VOLTS  
New Package Provides Capability of Inspection and Probe After  
Board Mounting  
Low Forward Voltage Drop  
175°C Operating Junction Temperature  
5
1,2,3,4  
Excellent Ability to Absorb Stresses Associated with Power  
MARKING  
DIAGRAM  
Temperature Cycling  
NRV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
C
HP620L  
ALLYW  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
LFPAK4  
CASE 760AB  
Compliant  
1
Mechanical Characteristics:  
Case: Epoxy, Molded  
A
A
A
A
HP620L  
A
LL  
Y
W
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
Epoxy Meets Flammability Rating UL 940 @ 0.125 in.  
Lead Finish: 100% Matte Sn (Tin)  
= Year  
Lead and Mounting Surface Temperature for Soldering Purposes:  
= Work Week  
260°C Max. for 10 Seconds  
Device Meets MSL 1 Requirements  
ORDERING INFORMATION  
Applications  
Device  
Package  
Shipping†  
Excellent Alternative to DPAK in SpaceConstrained Automotive  
Applications  
Very Low Leakage for Higher Temperature Operation  
Output Rectification in Compact Portable Consumer Applications  
Freewheeling Diode used with Inductive Loads  
NHP620LFST1G  
LFPAK4  
(PbFree) Tape & Reel  
3000 /  
NRVHP620LFST1G  
LFPAK4 3000 /  
(PbFree) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
June, 2019 Rev. 1  
NHP620LFS/D  
NHP620LFS, NRVHP620LFS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
RWM  
R
V
V
200  
6.0  
Average Rectified Forward Current  
I
A
A
A
F(AV)  
(Rated V , T = 169°C)  
R
C
Peak Repetitive Forward Current,  
I
12  
FRM  
(Rated V , Square Wave, 20 kHz, T = 160°C)  
R
C
NonRepetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)  
I
150  
FSM  
Storage Temperature Range  
T
65 to +175  
°C  
°C  
stg  
Operating Junction Temperature  
T
55 to +175  
J
ESD Rating (Human Body Model)  
3B  
C
ESD Rating (Machine Model)  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, JunctiontoCase, Steady State  
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)  
R
1.31  
°C/W  
θ
JC  
2
Thermal Resistance, JunctiontoAmbient, Steady State  
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)  
R
44.4  
°C/W  
θ
JA  
2
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Instantaneous Forward Voltage (Note 1)  
v
V
F
(i = 6 A, T = 125°C)  
0.80  
0.95  
0.73  
0.87  
F
J
(i = 6 A, T = 25°C)  
F
J
(i = 3 A, T = 125°C)  
F
J
(i = 3 A, T = 25°C)  
F
J
Instantaneous Reverse Current (Note 1)  
i
R
mA  
(Rated dc Voltage, T = 125°C)  
75  
0.5  
J
(Rated dc Voltage, T = 25°C)  
J
Maximum Reverse Recovery Time  
T
rr  
50  
ns  
(I = 1.0 A, di/dt = 50 A/ms, V = 30 V)  
F
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.  
www.onsemi.com  
2
 
NHP620LFS, NRVHP620LFS  
TYPICAL CHARACTERISTICS  
100  
100  
10  
10  
1
T = 175°C  
T = 175°C  
A
A
T = 150°C  
A
T = 150°C  
A
T = 125°C  
A
T = 125°C  
A
T = 85°C  
A
1
T = 85°C  
A
T = 25°C  
A
T = 25°C  
A
T = 55°C  
T = 55°C  
A
A
0.1  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
Figure 1. Typical Instantaneous Forward  
Characteristics  
Figure 2. Maximum Instantaneous Forward  
Characteristics  
1.E03  
1.E02  
1.E03  
1.E04  
1.E05  
1.E06  
1.E07  
1.E04  
1.E05  
1.E06  
1.E07  
1.E08  
1.E09  
T = 175°C  
T = 175°C  
A
A
T = 150°C  
A
T = 150°C  
A
T = 125°C  
A
T = 125°C  
A
T = 85°C  
A
T = 85°C  
A
T = 25°C  
A
T = 25°C  
A
T = 55°C  
A
T = 55°C  
A
1.E08  
1.E09  
1.E10  
1.E11  
20  
40  
60  
80 100 120 140 160 180 200  
20  
40  
60  
80 100 120 140 160 180 200  
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)  
R
Figure 3. Typical Reverse Characteristics  
Figure 4. Maximum Reverse Characteristics  
1000  
T = 25°C  
J
100  
10  
0.1  
1
10  
100  
V , REVERSE VOLTAGE (V)  
R
Figure 5. Typical Junction Capacitance  
www.onsemi.com  
3
NHP620LFS, NRVHP620LFS  
TYPICAL CHARACTERISTICS  
6
100  
90  
80  
70  
60  
50  
40  
30  
20  
T = 175°C  
J
R
= 1.31°C/W  
q
JC  
T = 175°C  
J
5
4
3
2
DC  
Square Wave  
(Duty = 0.5)  
Square Wave  
(Duty = 0.5)  
DC  
1
0
10  
0
25 40 55 70  
85 100 115 130 145 160 175  
0
1
2
3
4
5
6
T , CASE TEMPERATURE (°C)  
C
I , AVERAGE FORWARD CURRENT (A)  
F(AV)  
Figure 6. Current Derating per Device  
Figure 7. Forward Power Dissipation  
100  
10  
1
50% Duty Cycle  
20%  
10%  
5%  
2%  
1%  
0.1  
0.01  
Single Pulse  
0.001  
0.0000001 0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE TIME (sec)  
Figure 8. Typical Thermal Characteristics, JunctiontoAmbient  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
LFPAK4 5x6  
CASE 760AB  
ISSUE C  
DATE 19 NOV 2019  
GENERIC  
MARKING DIAGRAM*  
XXXXXX = Specific Device Code  
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
XXXXXX  
XXXXXX  
AWLYW  
W
= Work Week  
*This information is generic. Please refer  
to device data sheet for actual part  
marking. Some products may not follow  
the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON82777G  
LFPAK4 5x6  
PAGE 1 OF 1  
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