NHP820MFDT1G [ONSEMI]
Rectifier Diode;
| 型号： | NHP820MFDT1G |
| 厂家： | 
ONSEMI |
| 描述： | Rectifier Diode 快速恢复能力电源 超快恢复二极管 快速恢复二极管 超快速恢复能力电源 光电二极管 |
| 文件： | 总5页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NHP820MFD,
NRVHP820MFD
Switch-Mode
Power Rectifier
This ultrafast rectifier in the dual flag SO−8 flat lead package offers
designers a unique degree of versatility and design freedom. The two
devices are electrically independent and can be used separately, as
common cathode, as common anode or in series as a function of board
level layout. The exposed pad design provides low thermal resistance.
The clip attach design creates a package with very efficient die size to
board area ratio. While thermal performance is nearly the same as the
DPAK package height and board footprint are less than half.
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ULTRAFAST RECTIFIER
8 AMPERES (4x2), 200 VOLTS
7,8
5,6
1
3
Features
• New Package Provides Capability of Inspection and Probe After
Board Mounting
MARKING DIAGRAM
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
C1 C1
1
A1
NC
A2
C1
C1
C2
C2
DFN8 5x6
(SO8FL)
CASE 506BT
HP820D
AYWZZ
NC
C2 C2
• These are Pb−Free and Halide−Free Devices
HP820D = Specific Device Code
Mechanical Characteristics:
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
ORDERING INFORMATION
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
Device
Package
Shipping†
NHP820MFDT1G
DFN8
1500 /
Applications
(Pb−Free) Tape & Reel
• Excellent Alternative to DPAK in Space−Constrained Automotive
Applications
NHP820MFDT3G
DFN8 5000 /
(Pb−Free) Tape & Reel
DFN8 1500 /
(Pb−Free) Tape & Reel
DFN8 5000 /
(Pb−Free) Tape & Reel
• Output Rectification in Switching Power Supplies
• Freewheeling Diode used with Inductive Loads
NRVHP820MFDT1G
NRVHP820MFDT3G
NRVHP820MFDWT3G
DFN8
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
March, 2016 − Rev. 0
NHP820MFD/D
NHP820MFD, NRVHP820MFD
MAXIMUM RATINGS (per diode unless noted)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
200
4.0
R
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 170°C)
R
C
Peak Repetitive Forward Current,
I
8.0
80
FRM
(Rated V , Square Wave, 20 kHz, T = 169°C)
R
C
Non−Repetitive Peak Surge Current
I
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
T
−65 to +175
°C
°C
mJ
stg
Operating Junction Temperature
T
−55 to +175
J
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
E
AS
70
3A
M4
ESD Rating (Machine Model)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (per diode unless noted)
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
1.74
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS (per diode unless noted)
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 4.0 Amps, T = 125°C)
0.76
0.935
0.86
0.85
1.0
0.91
1.090
F
J
(i = 4.0 Amps, T = 25°C)
F
J
(i = 8.0 Amps, T = 125°C)
F
J
(i = 8.0 Amps, T = 25°C)
1.02
F
J
Instantaneous Reverse Current (Note 1)
i
R
mA
(Rated dc Voltage, T = 125°C)
6.00
0.012
35
0.5
J
(Rated dc Voltage, T = 25°C)
J
Reverse Recovery Time
t
t
23.8
28
ns
ns
rr
I = 3.0 A, V = 30 V, dl/dt = 50 A/ms, T = 25°C
F
R
J
Reverse Recovery Time
I = 3.0 A, V = 30 V, dl/dt = 50 A/ms, T = 50°C
27
50
rr
F
R
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NHP820MFD, NRVHP820MFD
TYPICAL CHARACTERISTICS
100
10
1
100
10
T = 175°C
A
T = 175°C
A
T = 150°C
A
T = 125°C
A
T = 150°C
A
1
T = 85°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = 25°C
A
T = −55°C
T = −55°C
A
A
0.1
0.2
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.6
0.8
1.0
1.2
1.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−03
1.E−04
T = 175°C
A
T = 175°C
A
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
1.E−05
1.E−06
1.E−07
T = 85°C
A
T = 85°C
A
T = 25°C
A
T = 25°C
A
0
20 40 60
80 100 120 140 160 180 200
0
20 40 60
80 100 120 140 160 180 200
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
100
10
8
7
6
5
4
3
2
R
= 1.74°C/W
T = 25°C
q
JC
J
DC
Square Wave
1
0
0.1
1
10
100
50 60 70 80 90 100 110 120 130 140 150 160 170180
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Diode
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3
NHP820MFD, NRVHP820MFD
TYPICAL CHARACTERISTICS
16
16
14
12
10
8
I /I = 20
PK AV
R
= 1.33°C/W
q
JC
14
12
10
8
DC
I /I = 5
PK AV
I /I = 10
PK AV
Square Wave
Square Wave
DC
6
6
4
4
2
0
2
0
0
1
2
3
4
5
6
7
8
9
10
50 60 70 80 90 100 110 120 130 140 150 160 170 180
I , AVERAGE FORWARD CURRENT (A)
F(AV)
T , CASE TEMPERATURE (°C)
C
Figure 7. Current Derating per Device
Figure 8. Forward Power Dissipation
100
50% Duty Cycle
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
Figure 9. Thermal Response
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4
NHP820MFD, NRVHP820MFD
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual)
CASE 506BT
ISSUE E
2X
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.
4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL
AS THE TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
D
A
B
E
2X
D1
0.20
C
8
7
6
5
7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.
E1
PIN ONE
IDENTIFIER
4X
h
MILLIMETERS
DIM
A
A1
b
b1
c
MIN
0.90
−−−
0.33
0.33
0.20
MAX
−−−
−−−
0.42
0.42
MAX
1.10
0.05
0.51
0.51
0.33
NOTE 7
c
A1
1
2
3
4
−−−
TOP VIEW
D
5.15 BSC
4.90
4.10
1.70
6.15 BSC
5.90
4.15
1.27 BSC
0.55
−−−
−−−
D1
D2
D3
E
E1
E2
e
G
h
K
K1
L
4.70
3.90
1.50
5.10
4.30
1.90
0.10
0.10
C
DETAIL A
A
5.70
3.90
6.10
4.40
C
SEATING
PLANE
NOTE 6
C
NOTE 4
SIDE VIEW
0.45
−−−
0.65
DETAIL A
12
−−−
−−−
_
0.51
0.56
0.48
3.25
1.80
D2
D3
−−−
0.61
3.50
2.00
0.71
3.75
2.20
SOLDERING FOOTPRINT*
4X L
K
M
N
e
1
4.56
4
2X
2X
DETAIL B
ALTERNATE
CONSTRUCTION
8X
2.08
0.56
DETAIL B
0.75
4X
b1
N
E2
M
4X
1.40
6.59
4.84
2.30
8
5
4X
G
b
3.70
8X
0.10
0.05
C
C
A B
K1
NOTE 3
BOTTOM VIEW
0.70
4X
1.27
PITCH
1.00
5.55
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NHP820MFD/D
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