NRVB540MFST3G [ONSEMI]
SWITCHMODE Power Rectifiers; 开关模式电源整流器
| 型号： | NRVB540MFST3G |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifiers |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR540MFS, NRVB540MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
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Board Mounting
• Guardring for Stress Protection
SCHOTTKY BARRIER
RECTIFIERS
• Low Forward Voltage
• 175°C Operating Junction Temperature
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
5 AMPERES
40 VOLTS
• These are Pb−Free and Halide−Free Devices
5,6
1,2,3
Mechanical Characteristics:
• Case: Epoxy, Molded
MARKING
DIAGRAM
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
A
C
C
260°C Max. for 10 Seconds
1
A
A
B540
AYWZZ
• Device Meets MSL 1 Requirements
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Not Used
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
B540
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
RRM
RWM
V
R
40
5
Average Rectified Forward Current
I
A
A
F(AV)
(Rated V , T = 165°C)
R
C
Peak Repetitive Forward Current,
(Rated V , Square Wave,
20 kHz, T = 165°C)
I
10
FRM
R
ORDERING INFORMATION
C
Device
Package
Shipping†
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
150
A
FSM
MBR540MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
MBR540MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Storage Temperature Range
T
−65 to +175
−40 to +175
40
°C
°C
mJ
stg
Operating Junction Temperature
T
J
NRVB540MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
NRVB540MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
3B
M4
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
June, 2013 − Rev. 0
MBR540MFS/D
MBR540MFS, NRVB540MFS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
4.0
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 5 Amps, T = 100°C)
0.44
0.50
0.54
0.58
F
J
(i = 5 Amps, T = 25°C)
F
J
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T = 100°C)
i
R
mA
6
20
2
J
(Rated dc Voltage, T = 25°C)
0.100
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR540MFS, NRVB540MFS
TYPICAL CHARACTERISTICS
10
10
T = 175°C
A
T = 175°C
A
T = 150°C
A
T = 150°C
A
T = 100°C
A
T = 100°C
A
1
1
T = 25°C
A
T = 25°C
A
T = −40°C
A
T = −40°C
A
0.1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
40
40
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E+00
1.E−01
1.E−02
1.E−03
T = 175°C
T = 175°C
A
A
T = 150°C
A
T = 150°C
A
T = 100°C
A
T = 100°C
A
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−04
1.E−05
1.E−06
1.E−07
T = 25°C
A
T = 25°C
A
T = −40°C
A
T = −40°C
A
1.E−08
1.E−09
1.E−09
1.E−10
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
40
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
100
10
9
T = 25°C
J
R
= 2.4°C/W
q
JC
8
DC
7
6
Square Wave
5
4
3
2
1
0
10
0
10
20
30
60
80
100
120
140
160
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating TO−220AB
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3
MBR540MFS, NRVB540MFS
TYPICAL CHARACTERISTICS
8
7
I /I = 20
PK AV
I /I = 10
PK AV
T = 175°C
J
6
5
4
3
2
I
/I = 5
PK AV
Square Wave
1
0
DC
0
1
2
3
4
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
Assumes 25°C ambient and soldered to
a 600 mm − oz copper pad on PCB
2
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 8. Thermal Characteristics
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4
MBR540MFS, NRVB540MFS
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P
(SO8 FL)
CASE 488AA
ISSUE H
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
D
5.15 BSC
4.90
4.00
6.15 BSC
5.90
3.65
1.27 BSC
0.61
1.35
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.70
3.80
5.10
4.20
c
A1
5.70
3.45
6.10
3.85
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 2:
PIN 1. ANODE
2. ANODE
SIDE VIEW
3. ANODE
DETAIL A
SOLDERING FOOTPRINT*
4. NO CONNECT
5. CATHODE
3X
4X
b
8X
1.270
0.750
4X
1.000
0.10
0.05
C
c
A
B
e/2
L
1
4
0.965
K
0.29X05
0.475
1.330
E2
2X
0.495
PIN 5
(EXPOSED PAD)
M
4.530
L1
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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MBR540MFS/D
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