NRVB5H100MFS [ONSEMI]
SWITCHMODE Power Rectifiers; 开关模式电源整流器
| 型号： | NRVB5H100MFS |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifiers |
| 文件： | 总5页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR5H100MFS,
NRVB5H100MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
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• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
5,6
1,2,3
• These are Pb−Free Devices
Mechanical Characteristics:
MARKING
DIAGRAM
• Case: Epoxy, Molded
A
C
C
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
1
B5H100
AYWZZ
A
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Not Used
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
B5H100 = Specific Device Code
• Device Meets MSL 1 Requirements
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
V
RRM
RWM
100
5
R
ORDERING INFORMATION
Average Rectified Forward Current
I
A
A
F(AV)
Device
Package
Shipping†
1500 /
(Rated V , T = 150°C)
R
C
MBR5H100MFST1G
SO−8 FL
Peak Repetitive Forward Current,
(Rated V , Square Wave,
I
10
FRM
(Pb−Free) Tape & Reel
R
20 kHz, T = 150°C)
C
MBR5H100MFST3G
NRVB5H100MFST1G
SO−8 FL 5000 /
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
200
A
FSM
(Pb−Free) Tape & Reel
SO−8 FL 1500 /
(Pb−Free) Tape & Reel
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change
T
−65 to +175
−55 to +175
10,000
°C
°C
NRVB5H100MFST3G
stg
T
J
dv/dt
V/ms
†For information on tape and reel specifications,
including part orientation and tape sizes, please
(Rated V )
R
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
100
mJ
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
3B
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
May, 2012 − Rev. 4
MBR5H100MFS/D
MBR5H100MFS, NRVB5H100MFS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
2.4
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 5 Amps, T = 125°C)
0.56
0.6
0.6
0.73
F
J
(i = 5 Amps, T = 25°C)
F
J
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T = 125°C)
i
R
mA
3
13
0.1
J
(Rated dc Voltage, T = 25°C)
0.003
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR5H100MFS, NRVB5H100MFS
TYPICAL CHARACTERISTICS
25°C
175°C
−40°C
175°C
150°C
125°C
−40°C
10
10
1
1
25°C
125°C
0.1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
175°C
175°C
150°C
125°C
150°C
125°C
25°C
25°C
−40°C
−40°C
1.E−07
1.E−08
1.E−09
1.E−10
0
10 20 30 40 50 60 70 80 90 100
0
10
20 30 40
50
60 70 80 90 100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Current
Characteristics
Figure 4. Maximum Reverse Current
Characteristics
10,000
1000
100
300
280
Single pulse non−repetitive square
wave 25°C ambient
Mounted on a minimum pad, FR4
board, 1 oz. copper pour
260
240
220
200
180
160
140
10
0
10 20 30 40 50 60 70 80 90 100
0
1.0
2.0
3.0
4.0
V , REVERSE VOLTAGE (V)
R
PULSE DURATION (ms)
Figure 5. Typical Junction Capacitance
Figure 6. Forward Surge Safe Operating Area
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3
MBR5H100MFS, NRVB5H100MFS
TYPICAL CHARACTERISTICS
9
8
7
6
5
6
5
DC
DC
Square
Wave
4
3
2
Square
Wave
4
3
2
R
= 49°C/W
q
JA
1
0
R
= 1°C/W
1
0
q
JC
150
155
160
165
170
175
0
20
40
60
80 100 120 140 160 180
T , CASE TEMPERATURE (°C)
C
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Forward Current Derating Over Case
Temperature
Figure 8. Forward Current Derating Over
Ambient Temperature
3
2
140
120
100
80
T = 175°C
J
Assumes 25°C
Ambient Temperature
Square
Wave
1 oz. Copper PCB
2 oz. Copper PCB
60
DC
1
0
40
20
0
0
1
2
3
4
5
0
100
200
300
400
500
600 700
2
I , AVERAGE RECTIFIED FORWARD CURRENT (A)
F
COPPER HEAT SPREADER AREA (mm )
Figure 9. Maximum Forward Power
Dissipation
Figure 10. Steady State Junction to Ambient
Thermal Resistance
10
1
Assumes 25°C ambient and soldered
to a 600 mm − 1 oz copper pad on PCB
2
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 11. Transient Thermal Response, Junction to Case
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4
MBR5H100MFS, NRVB5H100MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
−−−
6.15 BSC
5.80
−−−
1.27 BSC
0.61
1.35
0.61
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.50
3.50
5.10
4.22
c
A1
5.50
3.45
6.10
4.30
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
0.17
3.40
−−−
PLANE
0.10
0.10
C
C
DETAIL A
q
12
A
_
_
STYLE 2:
PIN 1. ANODE
2. ANODE
SIDE VIEW
3. ANODE
DETAIL A
4. NO CONNECT
SOLDERING FOOTPRINT*
5. CATHODE
b
8X
3X
1.270
4X
0.750
0.10
0.05
C
c
A
B
4X
1.000
e/2
L
1
4
K
0.965
0.29X05
0.475
1.330
E2
PIN 5
2X
0.495
M
L1
(EXPOSED PAD)
4.530
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBR5H100MFS/D
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