NSS12200WT1G [ONSEMI]
12 V, 3 A, Low VCE(sat) PNP Transistor; 12 V ， 3 A，低VCE （ sat）的PNP晶体管
| 型号： | NSS12200WT1G |
| 厂家： | 
ONSEMI |
| 描述： | 12 V, 3 A, Low VCE(sat) PNP Transistor |
| 文件： | 总6页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSS12200WT1G
12 V, 3 A, Low VCE(sat)
PNP Transistor
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
CE(sat)
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12 VOLTS
3.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 163 mW
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
2
COLLECTOR
1, 2, 5, 6
3
BASE
Features
• High Current Capability (3 A)
4
• High Power Handling (Up to 650 mW)
EMITTER
• Low V
(170 mV Typical @ 1 A)
CE(s)
• Small Size
• This is a Pb−Free Device
Benefits
1
• High Specific Current and Power Capability Reduces Required PCB Area
• Reduced Parasitic Losses Increases Battery Life
SC−88/SOT−363
CASE 419B
STYLE 20
MAXIMUM RATINGS (T = 25°C)
A
DEVICE MARKING
Rating
Symbol
Max
−12
−12
−5.0
Unit
Vdc
Vdc
Vdc
Adc
6
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
M
V2
G
1
Collector Current − Continuous
Collector Current − Peak
I
−2.0
−3.0
C
I
CM
V2 = Specific Device Code
M = Date Code
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
G
= Pb−Free Package
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
†
Device
NSS12200WT1G
Package
Shipping
SOT−363 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
June, 2005 − Rev. 0
NSS12200W/D
NSS12200WT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
(Note 1)
450
mW
D
T = 25°C
Derate above 25°C
A
3.6
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
275
Total Device Dissipation
P
(Note 2)
(Note 2)
650
mW
D
T = 25°C
A
Derate above 25°C
5.2
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
q
192
JA
Thermal Resistance,
Junction−to−Lead 6
R
105
1.4
°C/W
W
q
JL
Total Device Dissipation
(Single Pulse < 10 sec.)
P Single
D
Junction and Storage
Temperature Range
T , T
−55 to +150
°C
J
stg
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (I = −10 mAdc, I = 0)
V
−12
−12
−5.0
−
−15
−25
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage, (I = −0.1 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage, (I = −0.1 mAdc, I = 0)
−7.0
−
Vdc
E
C
Collector Cutoff Current, (V = −12 Vdc, I = 0)
I
CBO
−0.02
−0.03
−0.03
−0.1
−0.1
−0.1
mAdc
mAdc
mAdc
CB
E
Collector−Emitter Cutoff Current, (V
= −12 Vdc, I = 0)
I
I
−
CES
E
CES
EBO
Emitter Cutoff Current, (V
ON CHARACTERISTICS
DC Current Gain (Note 3)
= −5.0 Vdc, I = 0)
−
CES
E
h
FE
(I = −0.5 A, V = −1.5 V)
100
100
100
180
165
160
−
300
−
C
CE
(I = −0.8 A, V = −1.5 V)
C
CE
(I = −1.0 A, V = −1.5 V)
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = −0.5 A, I = −10 mA)
V
V
CE(sat)
−
−
−
−0.10
−0.14
−0.17
−0.160
−0.235
−0.290
C
B
(I = −0.8 A, I = −16 mA)
C
B
(I = −1.0 A, I = −20 mA)
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = −1.0 A, I = −20 mA)
V
V
V
BE(sat)
−
−
−
−
−0.84
−0.81
100
−0.95
−0.95
−
C
B
Base−Emitter Turn−on Voltage (Note 3)
(I = −1.0 A, V = −1.5 V)
V
BE(on)
C
CE
Cutoff Frequency
(I = −100 mA, V = −5.0 V, f = 100 MHz)
f
MHz
pF
T
C
CE
Output Capacitance
(V = −1.5 V, f = 1.0 MHz)
CB
C
obo
50
65
1. FR−4, Minimum Pad, 1 oz Coverage.
2. FR−4, 1″ Pad, 1 oz Coverage.
3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2%.
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2
NSS12200WT1G
0.5
0.4
0.3
0.2
0.5
0.4
0.3
0.2
2 A
1 A
I /I = 100
C
B
800 mA
0.1
0
0.1
0
I
= 100 mA
500 mA
C
I /I = 10
C
B
1
10
I , BASE CURRENT (mA)
100
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (AMPS)
B
C
Figure 1. Collector Emitter Voltage vs. Base Current
Figure 2. Collector Emitter Voltage vs. Collector Current
1.0
0.9
400
V
= 1.5 V
CE
125°C
25°C
T = −55°C
A
300
200
0.8
0.7
25°C
0.6
0.5
100
0
T = −55°C
A
125°C
0.4
V
= 1.5 V
1
CE
0.3
0.001
0.01
0.1
1
0.001
0.01
0.1
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Voltage vs. Collector
Current
1.0
0.9
0.8
10
1
1 s
100 ms
10 ms
1 ms
dc
I /I = 10
C
B
I /I = 100
C
B
0.1
0.7
0.6
SINGLE PULSE T = 25°C
A
0.01
0.001
0.01
0.1
1
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
V
, COLLECTOR EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Base Emitter Saturation Voltage vs.
Base Current
Figure 6. Safe Operating Area
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3
NSS12200WT1G
1
D = 0.50
D = 0.20
D = 0.10
0.1
D = 0.05
D = 0.02
D = 0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 7. Normalized Thermal Response
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4
NSS12200WT1G
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE V
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
MILLIMETERS
DIM MIN NOM MAX MIN
0.80
INCHES
NOM MAX
1.10 0.031 0.037 0.043
0.10 0.000 0.002 0.004
0.008 REF
6
1
5
2
4
3
A
0.95
0.05
A1 0.00
H
E
−E−
A3
0.20 REF
0.21
0.14
2.00
1.25
0.65 BSC
0.20
2.10
b
C
D
E
e
0.10
0.10
1.80
1.15
0.30 0.004 0.008 0.012
0.25 0.004 0.005 0.010
2.20 0.070 0.078 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b 6 PL
L
0.10
2.00
0.30 0.004 0.008 0.012
2.20 0.078 0.082 0.086
H
E
M
M
0.2 (0.008)
E
STYLE 20:
A3
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
C
4. EMITTER
5. COLLECTOR
6. COLLECTOR
A
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NSS12200WT1G
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NSS12200W/D
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