NST847AMX2T5G [ONSEMI]
Small Signal Bipolar Transistor;
| 型号： | NST847AMX2T5G |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal Bipolar Transistor 晶体管 |
| 文件： | 总10页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NST846BMX2,
NST847AMX2,
NST847BMX2
Product Preview
General Purpose
Transistors
www.onsemi.com
NPN Silicon
Features
COLLECTOR
3
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: > 4000 V
ESD Rating − Machine Model: > 400 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
EMITTER
MAXIMUM RATINGS
3
Rating
Symbol
Value
Unit
1
2
Collector-Emitter Voltage
NST846
NST847
V
CEO
V
CBO
V
EBO
65
45
Vdc
X2DFN3 (1.0x0.6)
CASE 714AC
Collector−Base Voltage
Emitter−Base Voltage
NST846
NST847
80
50
Vdc
Vdc
NST846
NST847
6.0
6.0
MARKING DIAGRAM
Collector Current − Continuous
I
C
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XX M
XX = Specific Device Code
THERMAL CHARACTERISTICS
M
= Date Code
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
225
mW
(Note 1)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
556
q
JA
Total Device Dissipation
P
D
300
mW
Alumina Substrate (Note 2)
T = 25°C
Derate above 25°C
A
2.4
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
417
q
JA
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
March, 2019 − Rev. P0
NST846BMX2/D
NST846BMX2, NST847AMX2, NST847BMX2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
NST846B
NST847A, B
V
65
45
−
−
−
−
V
V
V
V
(BR)CEO
(I = 10 mA)
C
Collector−Emitter Breakdown Voltage
NST846B
NST847A, B
V
80
50
−
−
−
−
(BR)CES
(BR)CBO
(BR)EBO
(I = 10 mA, V = 0)
C
EB
Collector−Base Breakdown Voltage
(I = 10 mA)
C
NST846B
NST847A, B
V
V
80
50
−
−
−
−
Emitter−Base Breakdown Voltage
(I = 1.0 mA)
E
BC846A, B
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
6.0
6.0
−
−
−
−
Collector Cutoff Current (V = 30 V)
I
−
−
−
−
15
5.0
nA
mA
CB
CBO
(V = 30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
NST847A
NST846B, NST847B
h
FE
−
−
90
150
−
−
−
(I = 10 mA, V = 5.0 V)
C
CE
(I = 2.0 mA, V = 5.0 V)
NST847A
NST846B, NST847B
110
200
180
290
220
450
C
CE
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter Voltage
(I = 10 mA, I = 0.5 mA)
V
−
−
−
−
0.25
0.6
V
V
C
B
CE(sat)
(I = 100 mA, I = 5.0 mA)
C
B
(I = 10 mA, I = 0.5 mA)
V
−
−
0.7
0.9
−
−
C
B
BE(sat)
(I = 100 mA, I = 5.0 mA)
C
B
(I = 2.0 mA, V = 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
(I = 10 mA, V = 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
MHz
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V = 10 V, f = 1.0 MHz)
C
−
4.5
pF
dB
CB
obo
Noise Figure (I = 0.2 mA,
NF
C
V
= 5.0 Vdc, R = 2.0 kW,
NST847A
NST846B, NST847B
−
−
−
−
10
4.0
CE
S
f = 1.0 kHz, BW = 200 Hz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NST846BMX2, NST847AMX2, NST847BMX2
NST847A
300
200
300
V
CE
= 5 V
V
CE
= 1 V
150°C
150°C
200
25°C
25°C
−55°C
−55°C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. DC Current Gain vs. Collector
Current
0.18
I /I = 20
C
B
150°C
0.16
0.14
0.12
0.10
0.08
0.06
0.04
25°C
−55°C
0.02
0
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1.2
−55°C
25°C
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
I /I = 20
0.9
0.8
0.7
0.6
0.5
0.4
C
B
−55°C
25°C
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
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3
NST846BMX2, NST847AMX2, NST847BMX2
NST847A
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA 20 mA
I
C
= 50 mA
I = 100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 6. Collector Saturation Region
Figure 7. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 8. Capacitances
Figure 9. Current−Gain − Bandwidth Product
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4
NST846BMX2, NST847AMX2, NST847BMX2
NST846B
600
500
400
600
V
CE
= 1 V
V
CE
= 5 V
150°C
150°C
500
400
300
200
25°C
25°C
300
200
−55°C
−55°C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 10. DC Current Gain vs. Collector
Current
Figure 11. DC Current Gain vs. Collector
Current
0.30
I /I = 20
C
B
150°C
0.25
0.20
0.15
25°C
0.10
0.05
0
−55°C
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 20
C
B
−55°C
25°C
−55°C
25°C
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
Figure 14. Base Emitter Voltage vs. Collector
Current
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5
NST846BMX2, NST847AMX2, NST847BMX2
NST846B
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
A
1.4
100 mA
200 mA
20 mA
50 mA
1.8
2.2
2.6
3.0
q
for V
BE
VB
-55°C to 125°C
I =
10 mA
C
0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 15. Collector Saturation Region
Figure 16. Base−Emitter Temperature Coefficient
40
T = 25°C
A
V
= 5 V
CE
500
T = 25°C
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 17. Capacitance
Figure 18. Current−Gain − Bandwidth Product
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6
NST846BMX2, NST847AMX2, NST847BMX2
NST847B
600
500
400
300
200
600
V
CE
= 1 V
V
CE
= 5 V
150°C
25°C
150°C
500
400
300
25°C
200 −55°C
−55°C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 19. DC Current Gain vs. Collector
Current
Figure 20. DC Current Gain vs. Collector
Current
0.30
I /I = 20
C
B
0.25
0.20
0.15
0.10
150°C
25°C
−55°C
0.05
0
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 20
C
B
−55°C
25°C
−55°C
25°C
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 22. Base Emitter Saturation Voltage vs.
Collector Current
Figure 23. Base Emitter Voltage vs. Collector
Current
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7
NST846BMX2, NST847AMX2, NST847BMX2
NST847B
2.0
1.6
1.2
0.8
0.4
0
1.0
T = 25°C
-55°C to +125°C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA 20 mA
I
C
= 50 mA
I = 100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 24. Collector Saturation Region
Figure 25. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 26. Capacitances
Figure 27. Current−Gain − Bandwidth Product
1
1
100 mS 10 mS
1 S
100 mS 10 mS
1 S
1 mS
1 mS
0.1
0.1
Thermal Limit
Thermal Limit
0.01
0.01
0.001
0.001
1
10
, COLLECTOR EMITTER VOLTAGE (V)
100
0.1
1
10
100
V
CE
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 28. Safe Operating Area for
NST847B
Figure 29. Safe Operating Area for
NST847A, NST847B
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8
NST846BMX2, NST847AMX2, NST847BMX2
ORDERING INFORMATION
Device
†
Marking
TBD
Package
Shipping
NST846BMX2T5G
NST847AMX2T5G
NST847BMX2T5G
X2DFN3
(1.0x0.6)
TBD
8,000 / Tape & Reel
TBD
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
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9
NST846BMX2, NST847AMX2, NST847BMX2
PACKAGE DIMENSIONS
X2DFN3 1.0x0.6, 0.35P
CASE 714AC
ISSUE A
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◊
NST846BMX2/D
相关型号：
NSTB1002DXV5T1
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 463B-01, 5 PIN
ONSEMI
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