NST856BF3T5G [ONSEMI]
PNP General Purpose Transistor; PNP通用晶体管![NST856BF3T5G](http://pdffile.icpdf.com/pdf1/p00141/img/icpdf/NST85_782425_icpdf.jpg)
型号: | NST856BF3T5G |
厂家: | ![]() |
描述: | PNP General Purpose Transistor |
文件: | 总4页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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NST856BF3T5G
PNP General Purpose
Transistor
The NST856BF3T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−1123 surface mount package. This device is ideal for
low−power surface mount applications where board space is at a
premium.
http://onsemi.com
COLLECTOR
3
Features
• h , 220−475
FE
1
• Low V
, ≤ −0.3 V
CE(sat)
BASE
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
2
EMITTER
NST856BF3T5G
MAXIMUM RATINGS
Rating
Symbol
Value
−65
Unit
Vdc
3
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
V
V
CEO
2
1
−80
Vdc
CBO
V
EBO
−5.0
−100
Vdc
SOT−1123
CASE 524AA
STYLE 1
I
C
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation, T = 25°C
P
D
290
2.3
mW
mW/°C
A
Derate above 25°C
(Note 1)
A M
Thermal Resistance,
R
q
JA
432
°C/W
Junction−to−Ambient
(Note 1)
A
M
= Device Code
= Date Code
Total Device Dissipation, T = 25°C
Derate above 25°C
P
347
2.8
mW
mW/°C
A
D
(Note 2)
Thermal Resistance,
Junction−to−Ambient
R
360
°C/W
°C/W
°C
q
JA
(Note 2)
ORDERING INFORMATION
Thermal Resistance,
Junction−to−Lead 3
R
Y
143
JL
†
Device
NST856BF3T5G
Package
Shipping
(Note 2)
SOT−1123 8000/Tape & Reel
(Pb−Free)
Junction and Storage Temperature Range T , T
−55 to
+150
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2
2
1. 100 mm 1 oz, copper traces.
2. 500 mm 1 oz, copper traces.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
January, 2009 − Rev. 0
NST856BF3/D
NST856BF3T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = −10 mA)
V
−65
−80
−80
−5.0
−
−
−
−
−
−
−
−
V
V
V
V
C
(BR)CEO
Collector−Emitter Breakdown Voltage (I = −10 mA, V = 0)
V
C
EB
(BR)CES
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = −10 mA)
V
V
C
Emitter−Base Breakdown Voltage (I = −1.0 mA)
E
Collector Cutoff Current (V = −30 V)
I
−
−
−
−
−15
−4.0
nA
mA
CB
CBO
Collector Cutoff Current (V = −30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
−
V
V
V
FE
(I = −10 mA, V = −5.0 V)
−
220
150
290
−
475
C
CE
(I = −2.0 mA, V = −5.0 V)
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
CE(sat)
−
−
−
−
−0.3
−0.8
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter On Voltage
(I = −2.0 mA, V = −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I = −10 mA, V = −5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
−
−
−
MHz
pF
T
(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V = −10 V, f = 1.0 MHz)
CB
C
obo
4.5
10
10
Input Capacitance
C
ibo
−
pF
(V = −0.5 V, I = 0 mA, f = 1.0 MHz)
EB
C
Noise Figure
NF
−
dB
(I = −0.2 mA, V = −5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
CE
S
0.18
0.16
0.14
0.12
0.10
0.08
0.06
800
700
600
500
400
300
200
I /I = 10
150°C (5.0 V)
C
B
V
= 150°C
CE(sat)
150°C (1.0 V)
25°C (5.0 V)
25°C
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
−55°C
0.04
0.02
100
0
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
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2
NST856BF3T5G
1.0
1.0
0.9
0.8
0.7
0.6
0.5
V
= 2.0 V
I /I = 10
CE
C
B
0.9
0.8
0.7
0.6
−55°C
−55°C
25°C
25°C
0.5
0.4
0.3
0.4
0.3
150°C
150°C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
9
I
=
C
100 mA
8
50 mA
7
6
5
4
3
30 mA
C
ib
10 mA
0
0.00001
0.0001
0.001
0.01
0
1.0
2.0
, EMITTER BASE VOLTAGE (V)
eb
3.0
4.0
5.0
I , BASE CURRENT (A)
b
V
Figure 5. Saturation Region
Figure 6. Input Capacitance
4.5
4.0
3.5
3.0
2.5
2.0
1.5
C
ob
1.0
0.5
0
5
10
15
20
25
30
V , COLLECTOR BASE VOLTAGE (V)
cb
Figure 7. Output Capacitance
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3
NST856BF3T5G
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA−01
ISSUE A
NOTES:
−X−
D
b1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
−Y−
1
2
3
E
b
e
MILLIMETERS
DIM MIN NOM MAX MIN
INCHES
NOM MAX
0.08 (0.0032)
X Y
A
b
0.34
0.15
0.37
0.20
0.15
0.12
0.80
0.60
0.35
1.00
0.10
0.40
0.25
0.20
0.17
0.85
0.65
0.013 0.015 0.016
0.006 0.008 0.010
0.004 0.006 0.008
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.014
A
b1 0.10
c
D
E
e
0.07
0.75
0.55
H
0.95
0.05
1.05
0.15
0.037 0.039 0.041
0.002 0.004 0.006
E
L
L
c
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.35
0.30
0.25
0.90
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
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NST856BF3/D
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