NST856MTWFTBG [ONSEMI]

General Purpose Transistors PNP, 65 V, 100 mA;


型号：	NST856MTWFTBG
厂家：	ONSEMI
描述：	General Purpose Transistors PNP, 65 V, 100 mA
文件：	总7页 (文件大小：258K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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COLLECTOR

General Purpose

Transistors

PNP, 65 V, 100 mA

BASE

EMITTER

NST856MTWFT

The NST856MTWFT is designed for general purpose amplifier

applications. It is housed in an ultra−compact DFN1010−3 with

wettable flanks, recommended for the automotive industry’s optical

inspection methods. The transistor is ideal for low−power surface

mount applications where board space and reliability are at a premium.

MARKING

DIAGRAM

56M

Features

XDFNW3

CASE 521AC

• Wettable Flank Package for Optimal Automated Optical

Inspection (AOI)

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

= Specific Device Code

= Month Code

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

ORDERING INFORMATION

Compliant

†

Device

Package

Shipping

NST856MTWFTBG

XDFNW3

(Pb−Free)

3000 / Tape &

Reel

MAXIMUM RATINGS (T = 25°C)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Max

−65

Unit

Vdc

NSVT856MTWFTBG

XDFNW3

(Pb−Free)

3000 / Tape &

Reel

CEO

CBO

EBO

−80

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

−5.0

−100

200

Collector Current − Continuous

Collector Current − Peak

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance Junction−to−Ambient

(Note 1)

191

°C/W

Total Power Dissipation per Device

650

@T = 25°C

(Note 1)

Junction and Storage Temperature Range

T , T

−65 to

+150

°C

stg

1. Per JESD51−7 with standard PCB footprint and 2 oz. Cu.

Publication Order Number:

February, 2023 − Rev. 1

NST856MTWFT/D

NST856MTWFT

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (I = −10 mA)

−65

−80

−5.0

−

(BR)CEO

Collector−Emitter Breakdown Voltage (I = −10 mA, V = 0)

(BR)CES

(BR)CBO

(BR)EBO

Collector−Base Breakdown Voltage (I = −10 mA)

Emitter−Base Breakdown Voltage (I = −0.1 mA, I = 0)

Collector Cutoff Current

(V = −30 V)

CBO

−

−15.0

−5.0

(V = −30 V, T = 150°C)

Emitter−Base Cutoff Current (V = −6 V, I = 0)

EBO

−

−0.1

ON CHARACTERISTICS

DC Current Gain

(Note 2)

(I = −10 mA, V = −5.0 V)

−

220

150

290

−

450

(I = −2.0 mA, V = −5.0 V)

Collector−Emitter Saturation Voltage

(I = −10 mA, I = −0.5 mA)

CE(sat)

−

−0.25

−0.60

(I = −100 mA, I = −5.0 mA)

Base−Emitter Saturation Voltage

(I = −10 mA, I = −0.5 mA)

BE(sat)

−

−0.7

−0.9

−

B (I = −100 mA, I = −5.0 mA)

Base−Emitter Turn−on Voltage

(I = −2.0 mA, V = −5.0 V)

BE(on)

−0.6

−

−0.75

−0.82

B (I = −10 mA, V = −5.0 V)

SMALL−SIGNAL CHARACTERISTICS

Transition Frequency

100

−

4.0

−

MHz

(I = −10 mA, V = −5.0 V, f = 100 MHz)

Output Capacitance

(V = −10 V, f = 1.0 MHz)

1.8

1.0

obo

Noise Figure

−

(I = −0.2 mA, V = −5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

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NST856MTWFT

TYPICAL CHARACTERISTICS

500

450

400

350

300

250

200

500

= −2 V

= −5 V

450

400

350

300

250

200

150°C

25°C

−55°C

150

100

150

100

−55°C

−0.0001

−0.001

−0.01

−0.1

−0.001

−0.01

−0.1

I , COLLECTOR CURRENT (A)

Figure 1. DC Current Gain

Figure 2. DC Current Gain

−0.35

−0.30

−0.25

−10

−1

= 20 mA

12 mA 14 mA 16 mA 18 mA

I /I = 10

−0.20

−0.15

−0.10

2 mA

−0.1

150°C

−55°C

25°C

−0.05

4 mA

6 mA

8 mA

10 mA

−4

, COLLECTOR EMITTER VOLTAGE (V)

−0.01

−1

−2

−3

−5

−6

−0.0001

−0.001

−0.01

−0.1

−1

I , COLLECTOR CURRENT (A)

Figure 3. Collector Current as a Function of

Collector Emitter Voltage

Figure 4. Collector−Emitter Saturation Voltage

−10

−1

−10

−1

I /I = 50

I /I = 20

150°C

−55°C

25°C

150°C

−55°C

25°C

−0.1

−0.01

−0.0001

−0.001

−0.01

−0.1

−1

−0.0001

−0.001

−0.01

−0.1

−1

I , COLLECTOR CURRENT (A)

Figure 5. Collector−Emitter Saturation Voltage

Figure 6. Collector−Emitter Saturation Voltage

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NST856MTWFT

TYPICAL CHARACTERISTICS

−1.2

−1.0

−0.8

−0.6

−0.4

−1.2

−1.0

−55°C

25°C

−55°C

−0.8

25°C

−0.6

−0.4

150°C

−0.2

I /I = 10

I /I = 20

C B

−0.0001

−0.001

−0.01

−0.1

−40

−0.0001

−0.001

−0.01

−0.1

I , COLLECTOR CURRENT (A)

Figure 7. Base−Emitter Saturation Voltage

Figure 8. Base−Emitter Saturation Voltage

−0.9

−0.8

−0.7

−0.6

−0.5

−0.4

−0.3

−0.2

−0.1

−55°C

25°C

T = 25°C

f = 1 MHz

150°C

= −5 V

−0.0001

−0.001

−0.01

−1

−2

−3

−4

−5

−6

I , COLLECTOR CURRENT (A)

, BASE−EMITTER VOLTAGE (V)

Figure 9. Base−Emitter “ON” Voltage

Figure 10. Input Capacitance

1000

100

T = 25°C

f = 1 MHz

T = 25°C

= −2 V

= 100 MHz

test

−10

−20

−30

−1

−10

I , COLLECTOR CURRENT (mA)

−100

, COLLECTOR−BASE REVERSE VOLTAGE (V)

Figure 11. Output Capacitance

Figure 12. f_T, Current Gain Bandwidth Product

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NST856MTWFT

TYPICAL CHARACTERISTICS

1 ms

0.1

10 ms

100 ms

1 s

0.01

Single Pulse Test @ T = 25°C

0.001

0.01

0.1

100

, COLLECTOR−EMITTER VOLTAGE (V)

Figure 13. Safe Operating Area

1000

100

50% Duty Cycle

20%

10%

Single Pulse

FR4 PCB, Single−sided, 100 mm pad area, 2 oz Cu thickness, Per JESD51−7

0.1

0.000001

0.00001

0.0001

0.001

0.01

0.1

100

1000

t, PULSE TIME (s)

Figure 14. Thermal Resistance

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

XDFNW3 1x1, 0.65P

CASE 521AC

ISSUE A

DATE 30 OCT 2019

GENERIC

MARKING DIAGRAM*

XXM

= Specific Device Code

= Month Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON11341H

XDFNW3 1x1, 0.65P

PAGE 1 OF 1

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

NST856MTWFTBG [ONSEMI]

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