NSVMMBT589LT1G [ONSEMI]
30 V，1.0 A，高电流，PNP，低饱和压，双极晶体管;
| 型号： | NSVMMBT589LT1G |
| 厂家： | 
ONSEMI |
| 描述： | 30 V，1.0 A，高电流，PNP，低饱和压，双极晶体管 小信号双极晶体管 |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT589LT1
High Current Surface Mount
PNP Silicon Switching
Transistor for Load
Management in
Portable Applications
http://onsemi.com
30 VOLTS, 2.0 AMPS
PNP TRANSISTORS
Features
• Pb−Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS (T = 25°C)
A
Rating
Symbol
Value
Unit
1
Collector−Emitter Voltage
V
V
V
−30
Vdc
CEO
CBO
EBO
BASE
Collector−Base Voltage
Emitter−Base Voltage
−50
−5.0
−1.0
−2.0
Vdc
Vdc
Adc
A
2
EMITTER
Collector Current − Continuous
Collector Current − Peak
I
C
I
CM
3
THERMAL CHARACTERISTICS
SOT−23 (TO−236)
1
CASE 318
STYLE 6
Characteristic
Symbol
Max
Unit
2
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
310
2.5
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
403
°C/W
q
JA
MARKING DIAGRAM
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
710
5.7
mW
mW/°C
A
G3 M G
Derate above 25°C
G
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
176
°C/W
q
JA
1
G3 = Device Code
Total Device Dissipation (Ref. Figure 8)
(Single Pulse < 10 sec.)
P
Dsingle
M
= Date Code*
575
mW
G
= Pb−Free Package
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
2. FR−4 @ 1.0 X 1.0 inch Pad
†
Device
Package
Shipping
MMBT589LT1
SOT−23 3,000 / Tape & Reel
MMBT589LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
January, 2007 − Rev. 4
MMBT589LT1/D
MMBT589LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
V
−30
−50
−5.0
−
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = −10 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = −0.1 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = −0.1 mAdc, I = 0)
−
Vdc
E
C
Collector Cutoff Current
(V = −30 Vdc, I = 0)
I
−0.1
−0.1
−0.1
mAdc
mAdc
mAdc
CBO
CB
E
Collector−Emitter Cutoff Current
(V = −30 Vdc)
I
−
CES
CES
Emitter Cutoff Current
I
−
EBO
(V = −4.0 Vdc)
EB
ON CHARACTERISTICS
DC Current Gain (Note 3) (Figure 1)
h
FE
−
(I = −1.0 mA, V = −2.0 V)
100
100
80
−
300
−
C
CE
(I = −500 mA, V = −2.0 V)
C
CE
(I = −1.0 A, V = −2.0 V)
C
CE
(I = 2.0 A, V = −2.0 V)
40
−
C
CE
Collector−Emitter Saturation Voltage (Note 3) (Figure 3)
(I = −0.5 A, I = −0.05 A)
V
V
CE(sat)
−
−
−
−0.25
−0.30
−0.65
C
B
(I = −1.0 A, I = 0.1 A)
C
B
(I = −2.0 A, I = −0.2 A)
C
B
Base−Emitter Saturation Voltage (Note 3) (Figure 2)
(I = −1.0 A, I = −0.1 A)
V
−
−1.2
−1.1
−
V
V
BE(sat)
C
B
Base−Emitter Turn−on Voltage (Note 3)
V
BE(on)
−
(I = −1.0 A, V = −2.0 V)
C
CE
Cutoff Frequency
f
T
100
−
MHz
pF
(I = −100 mA, V = −5.0 V, f = 100 MHz)
C
CE
Output Capacitance
(f = 1.0 MHz)
Cobo
15
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
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2
MMBT589LT1
200
150
100
230
V
CE
= −1.0 V
V
CE
= −2.0 V
210
190
170
150
130
110
90
125°C
25°C
50
0
−55°C
70
50
0.001
0.01
0.1
1.0
10
1.0
10
100
1000
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain versus
Collector Current
Figure 2. DC Current Gain versus
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.95
0.9
V
BE(sat)
I /I = 10
C B
0.85
0.8
V
BE(on)
0.75
0.7
I /I = 100
C B
0.65
0.6
0.1
0
0.55
0.5
V
CE(sat)
1.0
10
100
1000
0.001
0.01
0.1
1.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 3. “On” Voltages
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1.0
0.8
0.6
0.4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I /I = 100
C B
1000 mA
100 mA
I /I = 10
C B
0.2
0
50 mA
0.2
0
10 mA
0.01
0.1
1.0
10
100
1000
0.001
0.01
0.1
1.0
10
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (AMPS)
C
Figure 5. Collector Emitter Saturation Voltage
versus Collector Current
Figure 6. Collector Emitter Saturation Voltage
versus Collector Current
http://onsemi.com
3
MMBT589LT1
10
SINGLE PULSE TEST AT T = 25°C
amb
1 s
100 ms 10 ms 1 ms
100 ms
1.0
2 s
0.1
0.01
0.1
1.0
, COLLECTOR EMITTER VOLTAGE (VOLTS)
10
100
V
CE
Figure 7. Safe Operating Area
0.5
0.2
0.1
1.0E+00
1.0E−01
0.05
0.02
D = 0.01
1.0E−02
1.0E−03
r(t)
1E−05
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (sec)
Figure 8. Normalized Thermal Response
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4
MMBT589LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
H
E
E
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
c
1
2
MILLIMETERS
INCHES
NOM
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
MIN
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
e
q
A
L
A1
L1
VIEW C
H
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT589LT1/D
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