NSVMSD1819A-RT1G [ONSEMI]
NPN 双极晶体管;
| 型号： | NSVMSD1819A-RT1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极晶体管 放大器 光电二极管 小信号双极晶体管 |
| 文件： | 总4页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSD1819A--RT1
General Purpose Amplifier
Transistor
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
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COLLECTOR
3
Features
High hFE, 210--460
Low VCE(sat), < 0.5 V
Moisture Sensitivity Level 1
ESD Protection: Human Body Model > 4000 V
Machine Model > 400 V
1
2
BASE
EMITTER
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
3
1
2
MAXIMUM RATINGS (T = 25C)
A
Rating
Symbol
Value
60
Unit
Vdc
SC--70 (SOT--323)
CASE 419
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
(BR)CBO
(BR)CEO
(BR)EBO
STYLE 3
V
V
50
Vdc
7.0
Vdc
MARKING DIAGRAM
Collector Current -- Continuous
Collector Current -- Peak
THERMAL CHARACTERISTICS
Characteristic
I
100
200
mAdc
mAdc
C
I
C(P)
ZR M G
G
Symbol
Max
150
Unit
mW
C
1
Power Dissipation (Note 1)
Junction Temperature
P
D
T
J
150
ZR = Device Code
Storage Temperature Range
T
stg
--55 to +150
C
M
= Date Code*
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MSD1819A--RT1G
SC--70/
SOT--323
(Pb--Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
October, 2010 -- Rev. 7
MSD1819A--RT1/D
MSD1819A--RT1
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (I = 2.0 mAdc, I = 0)
Symbol
Min
50
60
7.0
--
Max
--
Unit
Vdc
Vdc
Vdc
mA
V
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector-Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
V
--
C
E
Emitter-Base Breakdown Voltage (I = 10 mAdc, I = 0)
--
E
E
Collector-Base Cutoff Current (V = 20 Vdc, I = 0)
I
I
0.1
0.1
CB
E
CBO
CEO
Collector-Emitter Cutoff Current (V = 10 Vdc, I = 0)
--
mA
CE
B
DC Current Gain (Note 2)
(V = 10 Vdc, I = 2.0 mAdc)
--
h
h
210
90
340
--
CE
C
FE1
FE2
(V = 2.0 Vdc, I = 100 mAdc)
CE
C
Collector-Emitter Saturation Voltage (Note 2)
(I = 100 mAdc, I = 10 mAdc)
V
--
0.5
Vdc
CE(sat)
C
B
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
250
200
150
100
0.30
0.25
I /I = 10
C
B
0.20
0.15
0.10
150C
25C
-- 5 5 C
50
0
R
θ
= 833C/W
JA
0.05
0
-- 5 0
0
50
100
150
0.0001
0.001
0.01
0.1
1
T , AMBIENT TEMPERATURE (C)
A
I , COLLECTOR CURRENT (A)
C
Figure 1. Derating Curve
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
450
400
350
300
250
200
150
100
150C (10 V)
150C (2 V)
0.95 I /I = 10
-- 5 5 C
25C
C
B
0.85
0.75
0.65
0.55
0.45
25C (10 V)
25C (2 V)
150C
-- 5 5 C (10 V)
-- 5 5 C (2 V)
0.35
0.25
50
0
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
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2
MSD1819A--RT1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.2
1.0
0.8
0.6
0.4
0.2
1 mA
T
= 25C
A
-- 5 5 C
25C
I
= 100 mA
50 mA
10 mA
C
150C
0.3
0.2
500 mA
0
0.0001
0.001
0.01
0.1
1
0.000001 0.00001
0.0001
0.001
0.01
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (A)
B
Figure 5. Base Emitter Turn--On Voltage vs.
Collector Current
Figure 6. Collector Saturation Region
18
17
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
16
15
14
13
12
11
10
9
C
ibo
(pF)
C
obo
(pF)
1.5
1.0
8
7
0
1
2
3
4
5
6
0
5
10
V , COLLECTOR BASE VOLTAGE (V)
cb
15
20
25
30
35
40
V
eb
, EMITTER BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
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3
MSD1819A--RT1
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 3:
c
PIN 1. BASE
A
A2
2. EMITTER
3. COLLECTOR
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
SCALE 10:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
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MSD1819A--RT1/D
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