NSVT45010MW6T3G [ONSEMI]
双 PNP 双极晶体管;型号: | NSVT45010MW6T3G |
厂家: | ONSEMI |
描述: | 双 PNP 双极晶体管 小信号双极晶体管 |
文件: | 总5页 (文件大小:145K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NST45010MW6T1G
Dual Matched General
Purpose Transistor
PNP Matched Pair
These transistors are housed in an ultra−small SOT−363 package
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
Complementary NPN equivalent NST45011MW6T1G is available.
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(3)
(2)
(1)
Q
Features
Q
1
2
• Current Gain Matching to 10%
• Base−Emitter Voltage Matched to ≤ 2 mV
• Drop−In Replacement for Standard Device
(4)
(5)
(6)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
6
MAXIMUM RATINGS
1
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−45
Unit
V
V
CEO
SOT−363
CASE 419B
STYLE 1
V
CBO
V
EBO
−50
V
−5.0
−100
V
Collector Current − Continuous
I
C
mAdc
MARKING DIAGRAMS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
4F MG
G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
4F = Device Code
M
G
= Date Code
= Pb−Free Package
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
P
D
380
250
mW
(Note: Microdot may be in either location)
T = 25°C
Derate Above 25°C
A
3.0
mW/°C
°C/W
ORDERING INFORMATION
Thermal Resistance,
Junction to Ambient
R
328
q
JA
†
Device
Package
Shipping
Junction and Storage
Temperature Range
T , T
−55 to +150
°C
J
stg
NST45010MW6T1G SOT−363
(Pb−Free)
3000 /
Tape & Reel
1. FR−5 = 1.0 x 0.75 x 0.062 in
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
October, 2009 − Rev. 1
NST45010MW6/D
NST45010MW6T1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (I = −10 mA)
V
−45
−50
−50
−5.0
−
−
−
−
−
−
−
−
V
V
V
V
C
(BR)CEO
Collector−Emitter Breakdown Voltage, (I = −10 mA, V = 0)
V
C
EB
(BR)CES
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage, (I = −10 mA)
V
V
C
Emitter−Base Breakdown Voltage, (I = −1.0 mA)
E
Collector Cutoff Current (V = −30 V)
I
−
−
−
−
−15
−5.0
nA
mA
CB
CBO
Collector Cutoff Current (V = −30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
−
FE
(I = −10 mA, V = −5.0 V)
−
220
0.9
150
290
1.0
−
475
−
C
CE
(I = −2.0 mA, V = −5.0 V)
C
CE
CE
(I = −2.0 mA, V = −5.0 V) (Note 2)
h h
FE(1)/ FE(2)
C
Collector−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
mV
mV
mV
CE(sat)
−
−
−
−
−300
−650
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
BE(sat)
−
−
−700
−900
−
−
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter On Voltage
(I = −2.0 mA, V = −5.0 V)
V
BE(on)
−600
−
−
−
−
−1.0
−750
−820
−2.0
C
CE
(I = −10 mA, V = −5.0 V)
C
CE
(I = −2.0 mA, V = −5.0 V) (Note 3)
V V
BE(1) − BE(2)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product, (I = −10 mA, V = −5 Vdc, f = 100 MHz)
f
100
−
−
−
−
−
MHz
pF
C
CE
T
Output Capacitance, (V = −10 V, f = 1.0 MHz)
C
4.5
10
CB
ob
Noise Figure, (I = −0.2 mA, V = −5 Vdc, R = 2 kW, f = 1 kHz, BW = 200Hz)
NF
−
dB
C
CE
S
2. h
/h
BE(1)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h is used as numerator.
BE(2)
FE(1) FE(2) FE
3. V
− V
is the absolute difference of one transistor compared to the other transistor within the same package.
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2
NST45010MW6T1G
TYPICAL CHARACTERISTICS
2.0
1.5
-1.0
T = 25°C
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
A
V
= -10 V
CE
T = 25°C
V
@ I /I = 10
C B
BE(sat)
A
1.0
0.7
0.5
V
BE(on)
@ V = -10 V
CE
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-0.1
-1.0
-10
-100
-0.2
-0.5
-2.0
-5.0
-20
-50
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-1.6
-1.2
-0.8
-0.4
0
-55°C to +125°C
T = 25°C
A
I =
C
-10 mA
I = -50 mA
C
I = -200 mA
C
I = -100 mA
C
I = -20 mA
C
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
C
ib
T = 25°C
A
200
150
V
= -10 V
CE
T = 25°C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0 -5.0
-10
-20 -30 -50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
NST45010MW6T1G
TYPICAL CHARACTERISTICS
200
100
50
The safe operating area curves indicate I −V limits
C
CE
1 s
3 ms
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
T = 25°C
T = 25°C
A
J
The data of Figure 7 is based upon T
= 150°C; T
J(pk)
C
or T is variable depending upon conditions.
A
10
5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
1.0
5.0
10
30 45 65 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 7. Active Region Safe Operating Area
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4
NST45010MW6T1G
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE W
D
NOTES:
e
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
6
1
5
2
4
3
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.10 0.031 0.037 0.043
0.10 0.000 0.002 0.004
0.008 REF
MIN
H
−E−
E
A
0.95
0.05
A1 0.00
A3
0.20 REF
0.21
0.14
2.00
1.25
0.65 BSC
0.20
2.10
b
C
D
E
e
0.10
0.10
1.80
1.15
0.30 0.004 0.008 0.012
0.25 0.004 0.005 0.010
2.20 0.070 0.078 0.086
1.35 0.045 0.049 0.053
0.026 BSC
0.30 0.004 0.008 0.012
2.20 0.078 0.082 0.086
b 6 PL
M
M
0.2 (0.008)
E
L
0.10
2.00
H
E
A3
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
C
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
A
6. COLLECTOR 2
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NST45010MW6/D
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