NTBL045N065SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL;
| 型号： | NTBL045N065SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL |
| 文件： | 总8页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
33 mohm, 650ꢀV, M2, TOLL
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
50 mW @ 18 V
73 A
NTBL045N065SC1
Features
• Typ. R
= 33 mW @ V = 18 V
GS
= 45 mW @ V = 15 V
GS
DS(on)
Typ. R
DS(on)
• Ultra Low Gate Charge (Q
= 105 nC)
G(tot)
• Low Effective Output Capacitance (C = 162 pF)
N−Channel MOSFET
oss
• 100% Avalanche Tested
• T = 175°C
J
D
• RoHS Compliant
Typical Applications
• SMPS (Switching Mode Power Supplies)
• Solar Inverters
• UPS (Uninterruptable Power Supplies)
• Energy Storage
G
S1
S2
H−PSOF8L
CASE 100DC
MARKING DIAGRAM
AYWWZZ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
650
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
−8/+22
−5/+18
V
Recommended Operation Val-
ues of Gate − Source Voltage
T
< 175°C
= 25°C
V
V
C
GSop
Continuous Drain
Current (Note 2)
I
D
73
348
51
A
W
A
Steady
State
T
C
Power Dissipation
(Note 2)
P
I
D
TBL045
065SC1
Continuous Drain
Current (Notes 1, 2)
Steady
State
T
= 100°C
= 25°C
D
C
A
Y
WW
ZZ
= Assembly Location
= Year
= Work Week
Power Dissipation
(Notes 1, 2)
P
D
174
W
Pulsed Drain Current (Note 3)
T
I
182
A
C
DM
= Assembly Lot Code
= Specific Device Code
TBL045065SC1
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
75
72
A
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
Single Pulse Drain−to−Source Avalanche
Energy (I = 12 A , L = 1 mH) (Note 4)
E
AS
mJ
L
pk
this data sheet.
Maximum Lead Temperature for Soldering,
1/8″ from Case for 10 Seconds
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. E of 72 mJ is based on starting T = 25°C; L = 1 mH, I = 12 A, V = 50 V,
AS
GS
J
AS
DD
V
= 18 V.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2023 − Rev. 2
NTBL045N065SC1/D
NTBL045N065SC1
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.43
43
Units
°C/W
°C/W
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
R
θ
θ
JC
R
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
650
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 20 mA, refer to 25°C
D
0.15
V/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
= 0 V
T = 25°C
10
1
mA
mA
nA
DSS
GS
J
V
DS
= 650 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= +18/−5 V, V = 0 V
250
GSS
GS
DS
Gate Threshold Voltage
V
R
V
= V , I = 8 mA
1.8
−5
2.8
4.3
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
+18
V
= 15 V, I = 25 A, T = 25°C
45
33
40
16
mW
DS(on)
GS
D
J
V
GS
= 18 V, I = 25 A, T = 25°C
50
D
J
V
GS
= 18 V, I = 25 A, T = 175°C
D J
Forward Transconductance
g
FS
V
= 10 V, I = 25 A
S
DS
GS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz,
1870
162
14
pF
ISS
V
DS
= 325 V
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
= −5/18 V, V = 520 V,
105
27
nC
G(TOT)
GS
DS
= 25 A
I
D
Gate−to−Source Charge
Gate−to−Drain Charge
Q
Q
GS
30
GD
f = 1 MHz
3.1
W
Gate−Resistance
R
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= −5/18 V, V = 400 V,
13
14
26
7
ns
d(ON)
GS
I
DS
= 25 A, R = 2.2 W,
D
G
Rise Time
t
r
Inductive Load
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
47
33
80
mJ
ON
E
OFF
E
TOT
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
Current
I
V
V
= −5 V, T = 25°C
75
A
A
V
SD
GS
J
Pulsed Source−Drain Diode Forward Current
(Note 3)
I
= −5 V, T = 25°C
182
SDM
GS
J
Forward Diode Voltage
V
V
GS
= −5 V, I = 25 A, T = 25°C
4.4
SD
SD
J
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2
NTBL045N065SC1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
GS
= −5/18 V, I = 25 A,
20
108
4.5
11
ns
nC
mJ
A
RR
SD
dI /dt = 1000 A/ms
S
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge time
Q
RR
E
REC
I
RRM
Ta
11
ns
ns
Discharge time
Tb
8.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NTBL045N065SC1
TYPICAL CHARACTERISTICS
120
100
80
4
V
GS
= 18 V
15 V
3
V
GS
= 12 V
12 V
2
60
15 V
18 V
40
10 V
1
9 V
20
0
8 V
0
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.4
1.3
1.2
1.1
1.0
140
120
100
80
I
D
= 25 A
I
V
= 25 A
D
= 18 V
GS
T = 25°C
J
T = 150°C
J
60
40
0.9
0.8
20
0
−75 −50 −25
0
25 50 75 100 125 150 175
7
8
9
10 11 12 13 14 15 16 17 18
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
V
GS
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
120
100
120
100
80
V
GS
= −5 V
V
DS
= 10 V
T = 175°C
J
T = 25°C
J
T = 25°C
J
60
10
T = 175°C
J
40
T = −55°C
J
20
0
T = −55°C
J
1
3
6
9
12
15
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NTBL045N065SC1
TYPICAL CHARACTERISTICS
10000
1000
20
15
10
5
I
D
= 25 A
V
= 390 V
DD
C
iss
V
DD
= 520 V
C
oss
V
= 650 V
DD
100
C
rss
10
1
0
f = 1 MHz
= 0 V
V
GS
−5
0
20
40
60
80
100
120
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
650
V
Q , GATE CHARGE (nC)
g
Figure 7. Gate−to−Source Voltage vs. Total
Charge
Figure 8. Capacitance vs. Drain−to−Source
Voltage
100
80
70
60
V
GS
= 18 V
T = 25°C
J
50
40
30
10
20
10
0
R
= 0.43°C/W
q
JC
1
25
50
75
100
125
150
175
0.001
0.01
0.1
1
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
200
100
20000
10000
Single Pulse
R
T
= 0.43°C/W
= 25°C
10 ms
100 ms
1 ms
q
JC
C
10
1000
100
1
10 ms
Single Pulse
T = 175°C
J
R
= 0.43°C/W
q
JC
DC
T
C
= 25°C
0.1
0.1
1
10
100
1000
0.00001 0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NTBL045N065SC1
TYPICAL CHARACTERISTICS
1
Duty Cycle = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
Notes:
= 0.43°C/W
0.01
R
t
q
JC
1
Duty Cycle, D = t /t
t
1
2
2
Single Pulse
0.00001
0.01
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Package
Shipping
NTBL045N065SC1
H−PSOF8L
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 9.90x11.68, 1.20P
CASE 100DC
ISSUE A
DATE 18 MAY 2023
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON80466G
H−PSOF8L 9.90x11.68, 1.20P
PAGE 1 OF 1
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