NTF3055L175T1 [ONSEMI]
Power MOSFET 2.0 A, 60 V, Logic Level; 功率MOSFET 2.0 A ， 60 V ，逻辑电平
| 型号： | NTF3055L175T1 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 2.0 A, 60 V, Logic Level |
| 文件： | 总6页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTF3055L175
Preferred Device
Power MOSFET
2.0 A, 60 V, Logic Level
N−Channel SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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2.0 A, 60 V
Features
R
DS(on) = 175 mW
• Pb−Free Packages are Available
Applications
N−Channel
• Power Supplies
• Converters
D
• Power Motor Controls
• Bridge Circuits
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
S
Rating
Symbol Value
Unit
Vdc
Vdc
Drain−to−Source Voltage
V
DSS
60
60
Drain−to−Gate Voltage (R = 1.0 MW)
V
DGR
GS
4
SOT−223
CASE 318E
STYLE 3
Gate−to−Source Voltage
− Continuous
V
GS
± 15
± 20
Vdc
Vpk
1
2
− Non−repetitive (t ≤ 10 ms)
p
3
Drain Current
− Continuous @ T = 25°C
I
I
2.0
1.2
6.0
Adc
Apk
A
D
D
− Continuous @ T = 100°C
A
MARKING DIAGRAM
I
− Single Pulse (t ≤ 10 ms)
DM
p
Total Power Dissipation @ T = 25°C (Note 1)
P
2.1
1.3
W
W
A
D
5L175 = Device Code
Total Power Dissipation @ T = 25°C (Note 2)
A
5L175
LWW
L
= Location Code
= Work Week
Derate above 25°C
0.014 W/°C
WW
Operating and Storage Temperature Range
T , T
J
−55
°C
stg
to 175
Single Pulse Drain−to−Source Avalanche
E
AS
65
mJ
Energy − Starting T = 25°C
J
PIN ASSIGNMENT
(V = 25 Vdc, V = 5.0 Vdc,
DD
GS
4
I
= 3.6 A, L = 10 mH, V = 60 Vdc)
Drain
L(pk)
DS
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
°C/W
°C
R
R
72.3
114
q
JA
JA
q
Maximum Lead Temperature for Soldering
T
260
L
Purposes, 1/8″ from case for 10 seconds
1
2
3
Gate Drain Source
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz. (Cu. Area
2
0.995 in ).
2. When surface mounted to an FR4 board using minimum recommended pad
2
size, 2−2.4 oz. (Cu. Area 0.272 in ).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future
use and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
February, 2004 − Rev. 2
NTF3055L175/D
NTF3055L175
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Vdc
Drain−to−Source Breakdown Voltage (Note 3)
(V = 0 Vdc, I = 250 mAdc)
Temperature Coefficient (Positive)
(BR)DSS
60
−
72.8
74.4
−
−
GS
D
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
DSS
(V = 60 Vdc, V = 0 Vdc)
−
−
−
−
1.0
10
DS
GS
(V = 60 Vdc, V = 0 Vdc, T = 150°C)
DS
GS
J
Gate−Body Leakage Current
(V = ± 15 Vdc, V = 0 Vdc)
I
−
−
± 100
nAdc
Vdc
GS
DS
GSS
ON CHARACTERISTICS (Note 3)
V
GS(th)
Gate Threshold Voltage (Note 3)
1.0
−
1.7
4.2
2.0
−
(V = V , I = 250 mAdc)
Threshold Temperature Coefficient (Negative)
DS
GS D
mV/°C
mW
R
Static Drain−to−Source On−Resistance (Note 3)
DS(on)
DS(on)
−
−
−
155
175
(V = 5.0 Vdc, I = 1.0 Adc)
GS
D
V
Vdc
Static Drain−to−Source On−Resistance (Note 3)
(V = 5.0 Vdc, I = 2.0 Adc)
0.32
0.57
0.42
−
GS
D
(V = 5.0 Vdc, I = 1.0 Adc, T = 150°C)
GS
D
J
g
fs
3.2
−
Mhos
pF
Forward Transconductance (Note 3)
(V = 8.0 Vdc, I = 1.5 Adc)
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
194
70
270
100
40
iss
(V = 25 Vdc, V = 0 V,
DS
GS
Output Capacitance
Transfer Capacitance
C
oss
f = 1.0 MHz)
C
29
rss
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
−
−
−
−
−
−
−
10.2
21
20
40
30
30
10
−
ns
d(on)
(V = 30 Vdc, I = 2.0 Adc,
Rise Time
DD
D
t
r
V
= 5.0 Vdc,
= 9.1 W) (Note 3)
GS
Turn−Off Delay Time
Fall Time
t
14.3
15.3
5.1
d(off)
R
G
t
f
Gate Charge
Q
T
Q
1
Q
2
nC
(V = 48 Vdc, I = 2.0 Adc,
DS
D
1.4
V
GS
= 5.0 Vdc) (Note 3)
2.5
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = 2.0 Adc, V = 0 Vdc)
V
SD
Vdc
ns
S
GS
(I = 2.0 Adc, V = 0 Vdc,
−
−
0.84
0.68
1.0
−
S
GS
T = 150°C) (Note 3)
J
Reverse Recovery Time
t
rr
−
−
−
−
28.3
15.6
−
−
−
−
t
a
(I = 2.0 Adc, V = 0 Vdc,
S
GS
dI /dt = 100 A/ms) (Note 3)
S
t
b
12.7
Reverse Recovery Stored Charge
Q
0.027
mC
RR
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTF3055L175
3.2
2.8
2.4
2.0
3.2
2.8
2.4
V
≥ 10 V
DS
V
= 3.5 V
GS
V
= 4 V
V
= 3 V
2
1.6
1.2
0.8
GS
GS
1.6
1.2
0.8
0.4
0
V
= 5 V
GS
T = 100°C
J
V
GS
= 2.5 V
2.4
T = 25°C
J
0.4
0
T = −55°C
J
0
0.4
0.8
1.2
1.6
2.0
2.8
1
1.4
1.8
2.2
2.6
3
3.4
3.8
4.2
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.28
0.24
0.2
0.28
0.24
0.2
V
GS
= 5 V
V
GS
= 10 V
T = 100°C
J
T = 25°C
J
0.16
0.12
0.16
0.12
T = 25°C
J
T = −55°C
J
0.08
0.04
0
0.08
0.04
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1000
100
2
1.8
1.6
1.4
1.2
1
V
GS
= 0 V
I
V
= 1 A
D
T = 150°C
J
= 5 V
GS
T = 125°C
J
T = 100°C
J
10
1
0.8
0.6
−50 −25
0
10
20
30
40
50
60
0
25
50
75 100 125 150 175
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Drain−to−Source Leakage Current
versus Voltage
Figure 5. On−Resistance Variation with
Temperature
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3
NTF3055L175
7
700
600
V
= 0 V
V
GS
= 0 V
V
DS
GS
T = 25°C
J
6
5
4
3
2
1
C
iss
Q
T
500
400
300
200
100
Q
1
Q
C
2
rss
C
iss
C
oss
I
= 2 A
D
C
rss
T = 25°C
J
0
0
0
V
GS
V
DS
10
5
0
5
10
15
20
25
1
2
3
4
5
6
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
2
V
DS
= 30 V
V
= 0 V
GS
I
V
= 2 A
D
T = 25°C
J
= 5 V
1.6
GS
1.2
t
r
t
f
t
d(off)
10
t
d(on)
0.8
0.4
1
0
0.6
1
10
R , GATE RESISTANCE (W)
100
0.64
0.68
0.72
0.76
0.8
0.84 0.88
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage versus Current
70
60
50
40
30
100
10
V
= 15 V
GS
I
D
= 6 A
100 ms
10 ms
1 ms
SINGLE PULSE
= 25°C
T
C
10 ms
1
0.1
20
10
0
0.01
R
LIMIT
DS(on)
dc
THERMAL LIMIT
PACKAGE LIMIT
0.001
0.1
1
10
100
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTF3055L175
100
10
D = 0.5
0.2
0.1
0.05
P
(pk)
TEST TYPE > MIN PAD 1 OZ
(Cu Area = 0.272 sq in)
< DIE SIZE 56 X 56 MILS
1
0.01
t
1
R
= MIN PAD 1 OZ
q
JC
(Cu Area = 0.272 sq in) °C/W
t
2
SINGLE PULSE
DUTY CYCLE, D = t /t
1 2
0.1
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1
10
100
1000
Figure 13. Thermal Response
ORDERING INFORMATION
†
Device
Package
Shipping
NTF3055L175T1
SOT−223 (TO−261)
1000 / Tape & Reel
1000 / Tape & Reel
4000 / Tape & Reel
4000 / Tape & Reel
4000 / Tape & Reel
4000 / Tape & Reel
NTF3055L175T1G
SOT−223 (TO−261)
(Pb−Free)
NTF3055L175T3
SOT−223 (TO−261)
NTF3055L175T3G
SOT−223 (TO−261)
(Pb−Free)
NTF3055L175T3LF
NTF3055L175T3LFG
SOT−223 (TO−261)
SOT−223 (TO−261)
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTF3055L175
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
NOTES:
A
F
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
6.30
3.30
1.50
0.60
2.90
2.20
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
4
2
A
B
C
D
F
0.249
0.130
0.060
0.024
0.115
0.087
0.263
0.145
0.068
0.035
0.126
0.094
S
B
1
3
G
H
J
0.0008 0.0040 0.020
D
0.009
0.060
0.033
0
0.014
0.078
0.041
10
0.24
1.50
0.85
0
K
L
L
G
M
S
J
_
_
_
_
0.264
0.287
6.70
7.30
C
STYLE 3:
PIN 1. GATE
2. DRAIN
0.08 (0003)
M
H
K
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
ǒ
Ǔ
1.5
0.059
SCALE 6:1
SOT−223
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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NTF3055L175/D
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