NTF5P03T3 [ONSEMI]
Power MOSFET; 功率MOSFET
ONSEMI 
NTF5P03T3
Preferred Device
Power MOSFET
5.2 Amps, 30 Volts
P–Channel SOT–223
Features
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• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SOT–223 Surface Mount Package
• Avalanche Energy Specified
5.2 AMPERES
30 VOLTS
RDS(on) = 100 mW
P–Channel
Applications
D
• DC–DC Converters
• Power Management
• Motor Controls
• Inductive Loads
• Replaces MMFT5P03HD
G
S
MARKING
DIAGRAM
4
SOT–223
CASE 318E
STYLE 3
AWW
5P03
1
2
3
A
WW
5P03
= Assembly Location
= Work Week
= Device Code
PIN ASSIGNMENT
4
Drain
1
2
3
Gate Drain Source
ORDERING INFORMATION
Device
NTF5P03T3
Package
Shipping
SOT–223 1000 Tape & Reel
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
May, 2002 – Rev. 1
NTF5P03T3/D
NTF5P03T3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
Max
–30
–30
± 20
Unit
V
Drain–to–Source Voltage
V
DSS
DGR
Drain–to–Gate Voltage (R = 1.0 MW)
V
V
GS
Gate–to–Source Voltage – Continuous
V
GS
V
1″ SQ.
FR–4 or G–10 PCB
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ T = 25°C
Linear Derating Factor
R
40
3.13
25
–5.2
–4.1
–26
°C/W
Watts
mW/°C
A
A
A
THJA
P
D
A
I
D
Drain Current – Continuous @ T = 25°C
A
I
D
10 seconds
Continuous @ T = 70°C
A
I
Pulsed Drain Current (Note 1)
DM
Minimum
FR–4 or G–10 PCB
Thermal Resistance – Junction to Ambient
R
80
°C/W
Watts
mW/°C
A
A
A
THJA
Total Power Dissipation @ T = 25°C
P
D
1.56
12.5
–3.7
–2.9
–19
A
Linear Derating Factor
I
D
Drain Current – Continuous @ T = 25°C
A
I
D
10 seconds
Continuous @ T = 70°C
A
I
Pulsed Drain Current (Note 1)
DM
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting T = 25°C
T , T
– 55 to 150
°C
J
stg
E
AS
mJ
J
(V = –30 Vdc, V = –10 Vdc, Peak I = –12 Apk, L = 3.5 mH, R = 25 W)
250
DD
GS
L
G
1. Repetitive rating; pulse width limited by maximum junction temperature.
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2
NTF5P03T3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
V
Vdc
Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(BR)DSS
–30
–
–
–28
–
–
(V = 0 Vdc, I = –0.25 mAdc)
Temperature Coefficient (Positive)
GS
D
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
DSS
(V = –24 Vdc, V = 0 Vdc)
–
–
–
–
–1.0
–25
DS
GS
(V = –24 Vdc, V = 0 Vdc, T = 125°C)
DS
GS
J
Gate–Body Leakage Current
(V = ± 20 Vdc, V = 0 Vdc)
I
–
–
± 100
nAdc
Vdc
GS
DS
GSS
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
–1.0
–
–1.75
3.5
–3.0
–
(V = V , I = –0.25 mAdc)
Threshold Temperature Coefficient (Negative)
DS
GS D
mV/°C
mW
R
Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (Notes 2 and 4)
DS(on)
–
76
107
100
150
(V = –10 Vdc, I = –5.2 Adc)
GS
D
(V = –4.5 Vdc, I = –2.6Adc)
GS
D
g
2.0
3.9
–
Mhos
pF
Forward Transconductance (Note 2)
(V = –15 Vdc, I = –2.0 Adc)
DS D
fs
DYNAMIC CHARACTERISTICS
Input Capacitance
(V = –25 Vdc, V = 0 V,
C
–
–
–
500
153
58
950
440
140
DS
GS
iss
f = 1.0 MHz)
Output Capacitance
C
oss
Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Note 3)
Turn–On Delay Time
Rise Time
(V = –15 Vdc, I = –4.0 Adc,
t
d(on)
–
–
–
–
–
–
–
–
–
–
–
–
10
33
38
20
16
45
23
24
15
1.6
3.5
2.6
24
48
94
92
38
110
60
80
38
–
ns
ns
DD
D
V
GS
= –10 Vdc,
t
r
R
= 6.0 W) (Note 2)
G
Turn–Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn–On Delay Time
Rise Time
(V = –15 Vdc, I = –2.0 Adc,
DD
D
d(on)
V
GS
= –10 Vdc,
t
r
R
= 6.0 W) (Note 2)
G
Turn–Off Delay Time
Fall Time
d(off)
t
f
Gate Charge
(V = –24 Vdc, I = –4.0 Adc,
Q
T
Q
1
Q
2
nC
DS
D
V
GS
= –10 Vdc) (Note 2)
–
Q3
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(I = –4.0 Adc, V = 0 Vdc)
V
SD
Vdc
ns
S
GS
(I = –4.0 Adc, V = 0 Vdc,
–
–
–1.1
–0.89
–1.5
–
S
GS
T = 125°C) (Note 2)
J
Reverse Recovery Time
(I = –4.0 Adc, V = 0 Vdc,
t
rr
–
–
–
–
34
20
–
–
–
–
S
GS
dI /dt = 100 A/ms) (Note 2)
S
t
a
b
t
14
Reverse Recovery Stored Charge
Q
0.036
mC
RR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
Max limit * Typ
3 SIGMA
Cpk + Ť
Ť
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3
NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
10
5
V
= –4.3 V
= –4.5 V
GS
V
DS
≥ –10 V
V
GS
8
6
4
4
3
V
= –6.0 V
GS
V
= –4.1 V
= –3.9 V
GS
V
GS
= –8.0 V
V
GS
V
GS
V
GS
= –10 V
T = 25°C
J
= –3.7 V
2
V
GS
V
GS
V
GS
= –3.5 V
= –3.3 V
= –3.1 V
T = 25°C
J
2
0
1
0
T = 100°C
J
T = –55°C
J
V
GS
= –2.7 V
0
0.3
0.6
0.9
1.2
1.5
1.8
3
3.5
4
4.5
5
5.5
6
–V
DS,
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
–V
GS,
GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.20
0.15
0.10
0.100
T = 25°C
J
I
= –4.0 A
D
0.075
0.050
T = 25°C
J
V
= –4.5 V
= –10 V
GS
V
GS
0.025
0
0.05
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
–V
GS,
GATE–TO–SOURCE VOLTAGE (VOLTS)
–I DRAIN CURRENT (AMPS)
D,
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.6
100
V
GS
= 0 V
I
D
= –2.0 A
V
GS
= –10 V
1.4
1.2
T = 125°C
J
10
1
1
T = 100°C
J
0.8
0.6
–50 –25
0
25
50
75
100 125
150
0
10
15
20
25
30
–V
DS,
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Drain–to–Source Leakage Current
versus Voltage
Figure 5. On–Resistance Variation with
Temperature
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4
NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
6000
5000
4000
3000
2000
1000
12.5
25
V
= 0 V
V
GS
= 0 V
DS
T = 25°C
J
–V
DS
C
iss
Q
T
10
7.5
5.0
2.5
20
15
10
5
C
rss
–V
GS
C
C
iss
Q
Q
2
1
oss
I
= –2 A
D
T = 25°C
J
C
rss
0
0
0
60
0
–V
GS
–V
DS
10
0
10
20
30
10
20
30
40
50
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
3
2
1
1000
V
= –15 V
= –4.0 A
= –10 V
DD
V
= 0 V
GS
I
D
T = 25°C
J
V
GS
t
d(off)
t
f
100
10
t
r
t
d(on)
0
0.5
1
10
R , GATE RESISTANCE (W)
100
0.6
0.7
0.8
0.9
1.0
–V , SOURCE–TO–DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
10
350
300
250
V
= 20 V
GS
I
D
= –6 A
SINGLE PULSE
= 25°C
T
C
200
150
dc
1
10 ms
1 ms
100 ms
100
50
0.1
R
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
10 ms
0.01
0
0.1
1
10
100
25
50
75
100
125
150
–V , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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5
NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
1
D = 0.5
0.2
0.1
NORMALIZED TO R
AT STEADY STATE (1″ PAD)
q
JA
0.05
0.1
0.0175 W 0.0710 W 0.2706 W 0.5779 W 0.7086 W
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
AMBIENT
0.02
CHIP
JUNCTION
0.01
SINGLE PULSE
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t, TIME (s)
1.0E+01
1.0E+02
1.0E+03
Figure 13. FET Thermal Response
INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.15
3.8
0.079
2.0
0.248
6.3
0.091
2.3
0.091
2.3
0.079
2.0
inches
0.059
1.5
0.059
1.5
0.059
mm
1.5
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6
NTF5P03T3
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density
board. The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177–189°C. When this type of furnace is
used for solder reflow work, the circuit boards and solder
joints tend to heat first. The components on the board are
then heated by conduction. The circuit board, because it has
a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 14 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems, but it is a good starting point. Factors
that can affect the profile include the type of soldering
system in use, density and types of components on the
board, type of solder used, and the type of board or
substrate material being used. This profile shows
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK” ZONES 2 & 5
“RAMP”
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT
STEP 7
COOLING
205° TO 219°C
PEAK AT
SOLDER
JOINT
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
200°C
150°C
100°C
5°C
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
100°C
140°C
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 14. Typical Solder Heating Profile
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7
NTF5P03T3
PACKAGE DIMENSIONS
SOT–223 (TO–261)
CASE 318E–04
ISSUE K
A
F
NOTES:
ąă1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ąă2. CONTROLLING DIMENSION: INCH.
4
2
INCHES
DIM MIN MAX
MILLIMETERS
S
B
MIN
6.30
3.30
1.50
0.60
2.90
2.20
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
1
3
A
B
C
D
F
0.249
0.130
0.060
0.024
0.115
0.087
0.263
0.145
0.068
0.035
0.126
0.094
D
G
H
J
L
0.0008 0.0040 0.020
G
0.009
0.060
0.033
0
0.014
0.078
0.041
10
0.24
1.50
0.85
0
J
K
L
C
M
S
_
_
_
_
0.08 (0003)
0.264
0.287
6.70
7.30
M
H
K
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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NTF5P03T3/D
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