NTMFC013NP10M5L [ONSEMI]
MOSFET - Power, Dual N- & P-Channel, SO8FL, 100 V, 13.4 mΩ, 60 A, -100 V, 32 mΩ, -36 A;
| 型号： | NTMFC013NP10M5L |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Dual N- & P-Channel, SO8FL, 100 V, 13.4 mΩ, 60 A, -100 V, 32 mΩ, -36 A |
| 文件： | 总13页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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MOSFET - Power, Dual N- &
P-Channel, SO8FL
100 V, 13.4 mW, 60 A,
-100 V, 36 mW, -36 A
NTMFC013NP10M5L
Features
• Small Footprint (5 x 6 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
100 V
13.4 mW @ 10 V
36 mW @ 10 V
60 A
−100 V
−36 A
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• Motor Drive, Home Automation
Dual−Channel MOSFET
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
J
Parameter
Symbol
Q1
100
20
Q2
−100
20
Unit
V
Drain−to−Source Breakdown Voltage
Gate−to−Source Voltage
V
(BR)DSS
V
GS
V
Continuous
Steady
State
T
C
= 25°C
I
D
60
−36
A
Drain Current
R
(Note 2)
q
JC
Power Dissi-
pation R
P
102
9
102
W
A
D
q
JC
(Note 2)
Continuous
Drain Current
R
Steady
State
T = 25°C
A
I
D
−5
q
JA
(Notes 1, 2)
Top
Bottom
Power Dissi-
pation R
P
D
2.7
2.7
W
WDFN8
CASE 511DC
q
JA
(Notes 1, 2)
Pulsed Drain
Current
T = 25°C, t = 10 ms
I
DM
208
−184
A
A
p
MARKING DIAGRAM
Operating Junction and Storage Tem-
perature Range
T , T
−55 to +150
°C
J
stg
&Y&Z&2&K
13NP
Source Current (Body Diode)
I
S
85
85
A
10M5L
Single Pulse Drain−to−Source
E
AS
161
169
mJ
Avalanche Energy (I = 17.9/18.4 A,
L
L = 1 mH)
&Y
&Z
&2
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
Lead Temperature Soldering Reflow for
Soldering Purposes
T
260
260
°C
L
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
13NP10M5L = Specific Device Code
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
NTMFC013NP10M5L/D
July, 2021 − Rev. 0
NTMFC013NP10M5L
THERMAL CHARACTERISTICS
Symbol
Parameter
Q1
1.46
55
Q2
1.46
55
Unit
Junction−to−Case – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 3)
°C/W
R
R
q
JC
JA
q
3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS (Q1, N−CHANNEL) (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/ T
J
60
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
GS
= 0 V, V = 80 V
DS
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
I
V
DS
= 0 V, V
=
20 V
nA
GSS
GS
V
V
GS
= V , I = 158 mA
1.0
1.7
3.0
V
GS(TH)
DS
D
V
/ T
Negative Threshold Temperature
Coefficient
8.85
mV/°C
GS(TH)
J
I
D
= 158 mA, ref to 25°C
R
Drain−to−Source On Resistance
V
= 10 V, I = 8.5 A
9.16
15.2
15.5
1.57
13.4
35.0
mW
DS(on)
GS
D
V
GS
= 4.5 V, I = 6.8 A
D
g
Forward Transconductance
Gate−Resistance
V
= 5 V, I = 8.5 A
S
FS
DS
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
1345
307
17.5
12
pF
nC
ISS
C
C
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
GS
= 0 V, f = 1 MHz, V = 50 V
DS
OSS
RSS
Q
G(TOT)
Q
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
2.4
4.7
5
G(TH)
V
= 4.5 V, V = 50 V, I = 8.5 A
DS D
GS
Q
GS
Q
GD
Q
23
G(TOT)
V
= 10 V, V = 50 V, I = 8.5 A
DD D
GS
Plateau Voltage
V
3.3
V
GP
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
12
8
ns
d(ON)
t
r
V
GS
= 10 V, V = 50 V, I = 8.5 A,
DS D
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
30
d(OFF)
t
f
10
Turn−On Delay Time
Rise Time
t
20.1
40.9
22.7
16
ns
d(ON)
t
r
V
GS
= 4.5 V, V = 50 V, I = 8.5 A,
DS D
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
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2
NTMFC013NP10M5L
ELECTRICAL CHARACTERISTICS (Q1, N−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
Parameter
OFF CHARACTERISTICS
Forward Diode Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
V
V
SD
T = 25°C
0.77
0.63
39
1.2
J
V
S
= 0 V,
GS
I
= 8.5 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
22
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 4.2 A
Discharge Time
17
b
Reverse Recovery Charge
Q
38
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS (Q2, P−CHANNEL) (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/ T
J
60
mV/°C
(BR)DSS
I
D
= −250 mA, ref to 25°C
Zero Gate Voltage Drain Current
I
T = 25°C
−1
mA
DSS
J
V
DS
= 0 V,
GS
V
= −80 V
T = 125°C
J
−100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
= V , I = −158 mA
−2.0
−3.31
−4.0
V
GS(TH)
GS
DS
D
/ T
Negative Threshold Temperature
Coefficient
V
6.9
mV/°C
GS(TH)
J
I
D
= −158 mA, ref to 25°C
Drain−to−Source On Resistance
R
V
V
= 10 V, I = −8.5 A
28.5
38.3
17.7
2.41
36
mW
DS(on)
GS
GS
DS
D
= −6 V, I = −5.7 A
50.1
D
Forward Transconductance
Gate−Resistance
g
FS
V
= −5 V, I = −8.5 A
S
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
2443
330
15
pF
nC
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
GS
= 0 V, f = 1 MHz, V = −50 V
DS
OSS
RSS
C
Q
30
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
6.9
10.4
5.1
18.4
5
G(TH)
V
= −10 V, V = −50 V, I = −8.5 A
DS D
GS
Q
GS
GD
Q
Q
G(TOT)
V
= −6 V, V = −50 V, I = −8.5 A
DS D
GS
Plateau Voltage
V
V
GP
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
12.4
16.1
20
ns
d(ON)
t
r
V
GS
= 10 V, V = −50 V, I = −8.5 A,
DS D
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
24
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3
NTMFC013NP10M5L
ELECTRICAL CHARACTERISTICS (Q2, P−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
Parameter
Turn−On Delay Time
Symbol
Test Conditions
Min
Typ
27
Max
Unit
t
ns
d(ON)
Rise Time
t
25
r
V
GS
= −6 V, V = −50 V, I = −8.5 A,
DS D
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
22
d(OFF)
t
8.5
f
OFF CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
−0.84
0.7
39
−1.2
V
SD
J
V
S
= 0 V,
GS
I
= −8.5 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
23
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= −4.2 A
Discharge Time
16.6
38
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NTMFC013NP10M5L
TYPICAL CHARACTERISTICS − N−CHANNEL
100
90
80
70
60
50
40
30
100
V
GS
= 5.5 to 10 V
5.0 V
T = −55°C
J
90
80
70
60
50
40
30
20
V
DS
= 10 V
T = 125°C
T = 25°C
J
J
4.4 V
4.0 V
3.8 V
20
10
0
3.6 V
10
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
30
25
20
15
10
30
25
V
= 4.5 V
T = 25°C
J
GS
I
= 8.5 A
D
T = 25°C
J
20
15
10
V
= 10 V
GS
5
0
5
0
2
3
4
5
6
7
8
9
10
5
10
15
20
25
30
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1M
100K
10K
1K
3.0
2.5
2.0
1.5
1.0
T = 150°C
J
I
V
= 8.5 A
D
= 10 V
GS
T = 125°C
J
T = 85°C
J
100
10
T = 25°C
J
0.5
0
1
0.1
−50 −25
0
25
50
75 100 125 150 175
5
15
25
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
35
45
55
65
75
85
95
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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NTMFC013NP10M5L
TYPICAL CHARACTERISTICS − N−CHANNEL
10K
1K
10
T = 25°C
DS
J
V
9
8
7
6
5
4
3
2
= 50 V
C
iss
I
D
= 8.5 A
C
oss
100
Q
Q
gd
gs
C
rss
10
1
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0.1
1
10
100
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
8.5
7.5
6.5
5.5
4.5
3.5
2.5
V
= 0 V
V
= 50 V
= 8.5 A
= 10 V
GS
DS
I
D
V
GS
t
d(off)
t
f
t
r
t
d(on)
10
1
T = 25°C
T = 125°C
J
J
1.5
0.5
T = 150°C
J
T = −55°C
J
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
100
10
1
10 ms
100 ms
T
= 25°C
J(initial)
10
T
= 100°C
J(initial)
V
≤ 10 V
GS
1 ms
Single Pulse
= 25°C
T
C
10 ms
0.1
R
Limit
DS(on)
100 ms
Thermal Limit
Package Limit
0.01
1
1E−06 1E−05
1E−04
1E−03
1E−02
1E−01
1
10
100
t , TIME IN AVALANCHE (sec)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Drain Current vs. Time in
Avalanche
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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NTMFC013NP10M5L
TYPICAL CHARACTERISTICS − N−CHANNEL
10
Duty Cycle = 50%
1
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Thermal Response
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NTMFC013NP10M5L
TYPICAL CHARACTERISTICS − P−CHANNEL
50
45
40
35
30
25
20
15
50
V
GS
= −6.5 to −10 V
−6.0 V
V
= −10 V
DS
40
30
20
−5.5 V
T = 25°C
J
−5.0 V
10
0
10
5
T = 125°C
J
−4.5 V
−4.0 V
4
T = −55°C
J
0
0
1
2
3
5
0
2
5
1
2
3
4
5
6
7
8
−V , DRAIN−TO−SOURCE VOLTAGE (V)
−V , GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
50
45
40
35
30
50
V
= −6 V
I
D
= −8.5 A
T = 25°C
GS
J
T = 25°C
J
40
30
20
V
= −10 V
GS
10
0
25
20
4
5
6
7
8
9
10
7
12
17
22
27
32
37
42
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
−I , DRAIN CURRENT (A)
D
Figure 16. On−Resistance vs. Gate−to−Source
Figure 17. On−Resistance vs. Drain Current
Voltage
and Gate Voltage
100K
10K
2.5
I
V
= −8.5 A
D
= −10 V
GS
T = 150°C
J
2.0
1.5
1.0
T = 125°C
J
1K
100
10
T = 85°C
J
T = 25°C
J
0.5
0
1
0.1
−50 −25
0
25
50
75 100 125 150 175
15
25
35
45
55
65
75
85
95
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 18. On−Resistance Variation with
Figure 19. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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NTMFC013NP10M5L
TYPICAL CHARACTERISTICS − P−CHANNEL
10K
1K
10
T = 25°C
DS
J
V
9
8
7
6
5
4
3
2
C
iss
= −50 V
I
D
= −8.5 A
C
oss
Q
Q
gd
gs
100
C
rss
10
1
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0.1
1
10
100
0
5
10
15
20
25
30
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
g
Figure 20. Capacitance Variation
Figure 21. Gate−to−Source vs. Total Charge
1000
100
8.5
7.5
6.5
5.5
4.5
3.5
2.5
V
GS
= 0 V
V
= −50 V
= −8.5 A
= −10 V
DS
I
D
V
GS
t
d(off)
t
f
t
r
t
d(on)
10
1
T = 125°C
J
T = 25°C
J
1.5
0.5
T = 150°C
J
T = −55°C
J
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 22. Resistive Switching Time Variation
vs. Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
100
100
10
1
100 ms
T
= 25°C
J(initial)
10
T
= 100°C
J(initial)
V
GS
≤ 10 V
Single Pulse
= 25°C
1 ms
T
C
0.1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
100 ms
0.01
1
1E−06 1E−05
1E−04
1E−03
1E−02
1E−01
1
10
100
t , TIME IN AVALANCHE (sec)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 25. Maximum Drain Current vs. Time in
Avalanche
Figure 24. Maximum Rated Forward Biased
Safe Operating Area
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NTMFC013NP10M5L
TYPICAL CHARACTERISTICS − P−CHANNEL
10
Duty Cycle = 50%
1
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 26. Thermal Response
ORDERING INFORMATION
Device
†
Device Marking
13NP10M5L
Package
Shipping (Qty / Packing)
NTMFC013NP10M5L
SO8FL
(Pb−Free/Halogen Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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10
NTMFC013NP10M5L
PACKAGE DIMENSIONS
WDFN8 5x6, 1.27P
CASE 511DC
ISSUE O
4.41 (2X)
4.10 (2X)
0.67 (6X)
0.10C
5.00
A
B
2X
8
7
5
6
0.50
1.75(2X)
6.00
2.26
PIN#1
IDENT
6.30
1.15 2X
0.50 (2X)
0.65(8X)
0.10 C
(0.20)
2
1
3
4
TOP VIEW
SIDE VIEW
2X
0.60(8X)
0.80 MAX
1.27
8X
0.635
0.10C
0.08C
RECOMMENDED LAND PATTERN
0.05
0.00
C
SEATING
PLANE
NOTES:
0.635
A. DOES NOT FULLY CONFORM TO JEDEC
REGISTRATION, MO−229.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
1.27
8X
(0.77) 6X
0.25
(0.35)4X
3
1
2
4
PIN#1
IDENT
(4X)
0.15
1.80
(2)X
1.70
1.125
2X
0.55
0.45
(8X)
(0.50)3X
6
5
7
8
0.55
8X
(3.04) 2X
0.45
4.15
4.05
0.10 C A B
(2X)
0.05
C
BOTTOM VIEW
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11
NTMFC013NP10M5L
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