NTMFD1D1N02X [ONSEMI]
Dual Power MOSFETs, N-Channel, 25V, 3.0mΩ/75A, 0.87mΩ/178A, Asymmetric, Power Clip Dual 5x6 ;
| 型号： | NTMFD1D1N02X |
| 厂家： | 
ONSEMI |
| 描述： | Dual Power MOSFETs, N-Channel, 25V, 3.0mΩ/75A, 0.87mΩ/178A, Asymmetric, Power Clip Dual 5x6 |
| 文件： | 总11页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Dual,
N-Channel, Power Clip,
POWERTRENCH),
Asymmetric
FET
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
3.0 mꢂ @ 10 V
3.75 mꢂ @ 4.5 V
0.87 mꢂ @ 10 V
1.1 mꢂ @ 4.5 V
Q1
25 V
75 A
Q2
25 V
178 A
25 V
PIN1
NTMFD1D1N02X
Features
• Small Footprint (5x6mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
PQFN8
POWER CLIP
CASE 483AR
• These are Pb−free, Halogen Free / BFR Free and are RoHS
Compliant
Typical Applications
• DC−DC Converters
• System Voltage Rails
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
NTMFD1
D1N02X
AWLYWW
Sym-
bol
Parameter
Drain−to−Source Voltage
Q1
Q2
Unit
V
V
DSS
25
25
NTMFD1D1N02X = Specific Device Code
A
WL
Y
= Assembly Site
Gate−to−Source Voltage
V
+16V +16V
V
GS
−12V −12V
= Wafer Lot Number
= Year of Production
= Work Week Number
Continuous Drain Cur- Steady
T
T
T
= 25°C
= 85°C
= 25°C
I
75
54
27
178
128
44
A
C
C
C
D
WW
rent R
(Note 3)
State
ꢀ
JC
Power Dissipation
(Note 3)
P
W
A
D
D
D
ELECTRICAL CONNECTION
R
ꢀ
JC
Continuous Drain Cur- Steady
rent R (Notes 1, 3) State
T = 25°C
A
I
20
15
40
29
D
ꢀ
JA
T = 85°C
A
Power Dissipation
(Notes 1, 3)
T = 25°C
A
P
2.1
2.3
W
A
R
ꢀ
JA
Continuous Drain Cur- Steady
rent R (Notes 2, 3) State
T = 25°C
A
I
14
10
27
20
D
ꢀ
JA
T = 85°C
A
Power Dissipation
(Notes 2, 3)
T = 25°C
A
P
0.96
1.0
W
A
R
ꢀ
JA
ORDERING INFORMATION
Pulsed Drain Current
T
p
= 25°C,
t = 100 ꢁ s
I
331
47
625
277
C
DM
†
Device
Package
Shipping
NTMFD1D1N02X
PQFN8
(Pb−Free)
3000 / Tape &
Reel
Single Pulse Drain−to−Source Avalanche
Energy Q1: I = 5.6 A , L = 3 mH (Note 4)
E
mJ
AS
L
pk
Energy Q2: I = 13.6 A , L = 3 mH (Note 4)
L
pk
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Operating Junction and Storage Temperature
Range
T ,
−55 to 150
°C
°C
J
T
stg
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
T
260
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
July, 2022 − Rev. 0
NTMFD1D1N02X/D
NTMFD1D1N02X
Table 1. THERMAL RESISTANCE RATINGS
Parameter
Symbol
Q1 Max
4.6
Q2 Max
2.8
Units
Junction−to−Case – Steady State (Note 1, 3)
Junction−to−Ambient – Steady State (Note 1, 3)
Junction−to−Ambient – Steady State (Note 2, 3)
R
ꢀ
JC
R
ꢀ
JA
R
ꢀ
JA
°C/W
60
55
130
120
2
1. Surface−mounted on FR4 board using 1 in pad size, 2 oz Cu pad.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.
3. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular
conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. R
is determined
ꢀ
CA
by the user’s board design.
4. Q1 100% UIS tested at L = 0.1 mH, I = 17.4 A.
AS
Q2 100% UIS tested at L = 0.1 mH, I = 42.5 A.
AS
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
FET
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
V
I
= 0 V, I = 250 ꢁ A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
25
25
V
V
(BR)DSS
(BR)DSS
(BR)DSS
GS
D
V
V
= 0 V, I = 250 ꢁ A
D
GS
Drain−to−Source Breakdown Voltage
Temperature Coefficient
15
16
mV/°C
= 250 ꢁ A, ref to 25°C
= 250 ꢁ A, ref to 25°C
D
/ T
J
I
D
Zero Gate Voltage Drain Current
I
V
GS
= 0 V, V = 20 V T = 25°C
10
ꢁ A
ꢁ A
nA
DSS
DS
J
10
T = 125°C
J
100
100
100
100
Gate−to−Source Leakage Current
I
V
DS
= 0 V, V = +16 V / −12 V
GS
GSS
V
DS
= 0 V, V = +16 V / −12 V
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
Q1
Q2
Q1
Q2
Q1
1.2
1.2
1.6
1.6
2.1
2.1
V
V
V
I
= V , I = 240 ꢁ A
GS(TH)
GS
DS
D
= V , I = 850 ꢁ A
GS
DS
D
Threshold Temperature Coefficient
V
/
−4.0
−4.3
2.4
mV/°C
= 240 ꢁ A, ref to 25°C
= 850 ꢁ A, ref to 25°C
GS(TH)
D
T
J
I
D
Drain−to−Source On Resistance
R
V
GS
V
GS
V
GS
V
GS
V
DS
V
DS
= 10 V, I = 20 A
3.0
3.75
0.87
1.1
mꢂ
DS(on)
D
= 4.5 V, I = 18 A
3.1
D
= 10 V, I = 37 A
Q2
0.66
0.84
123
322
0.8
D
= 4.5 V, I = 33 A
0.68
D
Forward Transconductance
Gate Resistance
g
FS
= 5 V, I = 20 A
Q1
Q2
Q1
Q2
S
D
= 5 V, I = 37 A
D
R
T = 25°C
A
ꢂ
G
0.9
5. Pulse Test: pulse width ≤ 300 ꢁ s, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
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2
NTMFD1D1N02X
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
CHARGES & CAPACITANCES
Input Capacitance
Symbol
Test Condition
FET
Min
Typ
Max
Unit
pF
pF
pF
nC
nC
nC
nC
nC
V
C
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1080
4265
322
1020
47
ISS
Output Capacitance
Reverse Capacitance
Total Gate Charge
Gate−to−Drain Charge
Gate−to−Source Charge
Total Gate Charge
Output Charge
C
C
OSS
V
= 0 V, V = 12 V, f = 1 MHz
DS
GS
RSS
118
6.8
27
Q
G(TOT)
Q
GD
Q
GS
1.4
5.2
3.0
11
Q1: V = 4.5V, V = 12V, I = 20A
GS
DS
D
Q2: V = 4.5V, V = 12V, I = 37A
GS
DS
D
Q
Q1: V = 10V, V = 12V, I = 20A
15
G(TOT)
GS
DS
D
Q2: V = 10V, V = 12V, I = 37A
GS
DS
D
59
Q
V
GS
= 0 V, V = 12 V
6.2
22
OSS
DS
Plateau Voltage
V
GP
Q1: V = 4.5V, V = 12V, I = 20A
2.8
2.8
GS
GS
DS
D
D
Q2: V = 4.5V, V = 12V, I = 37A
DS
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
10
21
ns
ns
ns
ns
d(ON)
Rise Time
t
2.5
6.6
12
r(ON)
V
= 4.5 V
GS
Q1: I = 20 A, V = 12 V, R = 2
Q2: I = 37 A, V = 12 V, R = 2
ꢂ
D
DD
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
ꢂ
D
DD
G
26
t
f
2.5
6.0
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6)
Turn−On Delay Time
t
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
7.4
11
ns
ns
ns
ns
d(ON)
Rise Time
t
1.1
2.9
17
r(ON)
V
= 10 V
GS
Q1: I = 20 A, V = 12 V, R = 2
Q2: I = 37 A, V = 12 V, R = 2
ꢂ
D
DD
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
ꢂ
D
DD
G
36
t
f
1.4
3.5
5. Pulse Test: pulse width ≤ 300 ꢁ s, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
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3
NTMFD1D1N02X
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
FET
Q1
Min
Typ
Max
Unit
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
V
V
= 0 V, I = 20 A
T = 25°C
J
0.81
0.68
0.8
0.65
18
V
GS
GS
GS
S
T = 125°C
J
= 0 V, I = 37 A
T = 25°C
J
Q2
S
T = 125°C
J
Reverse Recovery Time
t
= 0 V,
Q1
Q2
Q1
Q2
ns
RR
Q1: I = 20 A, dI/dt = 100 A/ꢁ s
Q2: I = 37 A, dI/dt = 300 A/ꢁ s
S
35
S
Reverse Recovery Charge
Q
6.6
44
nC
RR
5. Pulse Test: pulse width ≤ 300 ꢁ s, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PowerTrench is a registered trademark of Semiconductor Components Industries, LLC.
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4
NTMFD1D1N02X
TYPICAL CHARACTERISTICS − Q1
50
40
30
20
50
3.0 V
V
= 10 V
to 3.5 V
2.9 V
GS
V
DS
= 5 V
40
30
20
2.7 V
2.6 V
T = 25°C
J
10
0
10
0
T = 125°C
T = −55°C
J
J
0
0.5
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
I
= 20 A
D
9
7
T = 25°C
J
V
= 4.5 V
= 10 V
GS
V
GS
5
3
1
1
0
2
3
4
5
6
7
8
9
10
10
20
30
40
50
60
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
1.6
1.4
1.2
1.0
100K
10K
I
= 20 A
= 10 V
D
T = 150°C
J
V
GS
T = 125°C
J
1K
100
10
T = 85°C
J
T = 25°C
J
0.8
0.6
1
0.1
−75 −50 −25
0
25
50
75 100 125 150
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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5
NTMFD1D1N02X
TYPICAL CHARACTERISTICS − Q1
10
10K
1K
8
6
4
C
iss
C
oss
100
C
Q
rss
gd
Q
gs
10
1
V
I
= 12 V
= 20 A
DS
2
0
V
= 0 V
GS
D
f = 100 KHz
T = 25°C
J
0
5
10
15
20
25
100
100
0
3
6
9
12
15
18
V
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
DS
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
100
10
V
= 0 V
GS
t
t
d(off)
10
t
d(on)
r
t
f
1
V
V
I
= 4.5 V
GS
= 12 V
DS
= 20 A
D
T = 125°C
T = 25°C
T = −55°C
J
J
J
1
0.1
1
10
R , GATE RESISTANCE (ꢂ)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
10 ꢁ s
100 ꢁ s
T
= 25°C
J(initial)
10
10
T
C
= 25°C
≤ 10 V
Single Pulse
T
= 100°C
V
GS
J(initial)
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
T
= 125°C
J(initial)
100 ms
1
0.1
0.1
1
10
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (mS)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Avalanche Current vs. Time in
Avalanche
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NTMFD1D1N02X
TYPICAL CHARACTERISTICS − Q1
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Notes:
= 4.6°C/W
P
R
0.01
DM
ꢀ
JC
Peak T = P
x Z (t) + T
ꢀ
JC C
Single Pulse
t
J
DM
1
Duty Cycle, D = t /t
t
1
2
2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
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NTMFD1D1N02X
TYPICAL CHARACTERISTICS − Q2
100
80
100
3.0 V
2.9 V
V
DS
= 5 V
80
60
40
V
GS
= 10 − 3.5 V
60
2.7 V
2.6 V
40
T = 25°C
J
20
0
20
0
T = 125°C
T = −55°C
J
J
0
0.5
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
2.0
1.5
1.0
5
4
3
2
I
= 37 A
D
T = 25°C
J
V
= 4.5 V
= 10 V
GS
V
GS
0.5
0
1
0
2
3
4
5
6
7
8
9
10
10
40
70
100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 16. On−Resistance vs. Gate−to−Source
Figure 17. On−Resistance vs. Drain Current
Voltage
and Gate Voltage
1.8
1.6
1.4
1.2
1.0
100K
10K
T = 150°C
J
I
= 37 A
= 10 V
D
T = 125°C
J
V
GS
1K
100
10
T = 85°C
J
T = 25°C
J
0.8
0.6
1
0.1
−75 −50 −25
0
25
50
75 100 125 150
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 18. On−Resistance Variation with
Figure 19. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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NTMFD1D1N02X
TYPICAL CHARACTERISTICS − Q2
10
10K
1K
C
iss
8
6
4
C
oss
C
rss
100
Q
gd
Q
gs
10
1
V
I
= 12 V
= 37 A
DS
2
0
V
= 0 V
GS
D
f = 100 KHz
T = 25°C
J
0
5
10
15
20
25
0
10
20
30
40
50
60
70
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 20. Capacitance Variation
Figure 21. Gate−to−Source vs. Total Charge
1000
100
1000
100
10
V
GS
= 0 V
t
t
d(off)
d(on)
10
1
t
r
1
V
V
I
= 10 V
= 12 V
= 37 A
t
GS
f
T = 125°C
J
DS
D
T = 25°C
T = −55°C
J
J
0.1
1
10
R , GATE RESISTANCE (ꢂ)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 22. Resistive Switching Time Variation
vs. Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
1000
100
100
10 ꢁ s
T
= 25°C
J(initial)
100 ꢁ s
T
= 100°C
J(initial)
10
10
T
V
= 25°C
C
1 ms
≤ 10 V
GS
10 ms
Single Pulse
1
100 ms
T
= 125°C
J(initial)
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.1
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (mS)
AV
Figure 24. Maximum Rated Forward Biased
Safe Operating Area
Figure 25. Avalanche Current vs. Time in
Avalanche
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NTMFD1D1N02X
TYPICAL CHARACTERISTICS − Q2
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Notes:
= 2.8°C/W
P
R
0.01
DM
ꢀ
JC
Peak T = P
Duty Cycle, D = t /t
x Z (t) + T
ꢀ
JC C
t
J
DM
1
Single Pulse
0.000001
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 26. Transient Thermal Impedance
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NTMFD1D1N02X
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AR
ISSUE A
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