NTMFD0D9N02P1E [ONSEMI]
功率 Mosfet，30/25V，POWERTRENCH® Power Clip;
| 型号： | NTMFD0D9N02P1E |
| 厂家： | 
ONSEMI |
| 描述： | 功率 Mosfet，30/25V，POWERTRENCH® Power Clip |
| 文件： | 总11页 (文件大小：506K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFD0D9N02P1E
MOSFET – Power, Dual,
N-Channel, Power Trench,
Power Clip, Asymmetric
30ꢀV / 25 V
www.onsemi.com
Features
• Small Footprint (5x6mm) for Compact Design
• Low R
to Minimize Conduction Losses
FET
V
R
MAX
I MAX
D
DS(on)
(BR)DSS
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
3.0 mW @ 10 V
3.8 mW @ 4.5 V
0.72 mW @ 10 V
0.95 mW @ 4.5 V
G
Q1
30 V
77 A
• Designed with Low Rg for Fast Switching Applications
• These are Pb−free, Halogen Free / BFR Free and are RoHS
Q2
25 V
180 A
Compliant
Typical Applications
• DC−DC Converters
PIN1
• System Voltage Rails
• General Purpose Point of Load
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Sym-
bol
Parameter
Drain−to−Source Voltage
Q1
Q2
Unit
V
PQFN8
POWER CLIP
CASE 483AR
V
DSS
30
25
Gate−to−Source Voltage
V
GS
+16V +16V
−12V −12V
V
MARKING DIAGRAM
Continuous Drain Cur- Steady
T
T
= 25°C
= 85°C
I
D
77
56
180
130
A
C
rent R
(Note 3)
State
q
JC
C
&Z&3&K
2EGN
Power Dissipation
(Note 3)
T = 25°C
P
29.2 37.4
W
A
A
D
D
D
R
q
JC
Continuous Drain Cur- Steady
rent R (Note 1, 3)
State
T = 25°C
A
I
D
21
15
44
32
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
q
JA
T = 85°C
A
Power Dissipation
(Note 1, 3)
T = 25°C
A
P
2.1
2.3
W
A
2EGN = Specific Device Code
R
q
JA
Continuous Drain Cur- Steady
rent R (Note 2, 3)
State
T = 25°C
A
I
D
14
10
30
21
ELECTRICAL CONNECTION
q
JA
T = 85°C
A
Power Dissipation
(Note 2, 3)
T = 25°C
A
P
0.96 1.04
W
R
q
JA
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
356 1023
A
A
p
Single Pulse Drain−to−Source Avalanche
Energy Q1: I = 10 A , L = 3 mH (Note 4)
E
AS
150
600
mJ
L
pk
Energy Q2: I = 20 A , L = 3 mH (Note 4)
L
pk
Operating Junction and Storage Temperature
T ,
stg
−55 to 150
°C
°C
J
ORDERING INFORMATION
T
†
Device
NTMFD0D9N02P1E
Package
Shipping
Lead Temperature Soldering Reflow for Sol-
dering Purposes (1/8″ from case for 10 s)
T
L
260
PQFN8
(Pb−Free)
3000 / Tape &
Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2019 − Rev. 0
NTMFD0D9N02P1E/D
NTMFD0D9N02P1E
Table 1. THERMAL RESISTANCE RATINGS
Parameter
Symbol
Q1 Max
4.3
Q2 Max
3.3
Units
Junction−to−Case – Steady State (Note 1, 3)
Junction−to−Ambient – Steady State (Note 1, 3)
Junction−to−Ambient – Steady State (Note 2, 3)
R
q
JC
R
q
JA
R
q
JA
°C/W
60
55
130
120
2
1. Surface−mounted on FR4 board using 1 in pad size, 2 oz Cu pad.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.
3. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular
conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. RQCA is determined
by the user’s board design.
4. Q1 100% UIS tested at L = 0.1 mH, I = 21 A.
AS
Q2 100% UIS tested at L = 0.1 mH, I = 45 A.
AS
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
FET
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
V
V
V
= 0 V, I = 1 mA
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
25
V
V
(BR)DSS
GS
D
V
= 0 V, I = 1 mA
D
(BR)DSS
GS
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
= 1 mA, ref to 25°C
= 1 mA, ref to 25°C
18
16
mV/°C
(BR)DSS
D
D
T
J
I
Zero Gate Voltage Drain Current
I
V
= 0 V, V = 24 V
T = 25°C
J
mA
10
DSS
GS
DS
V
= 0 V, V = 20 V
10
GS
DS
Gate−to−Source Leakage Current
I
V
= 0 V, V = +16 V / −12 V
100
100
nA
GSS
DS
DS
GS
V
= 0 V, V = +16 V / −12 V
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
Q1
Q2
Q1
Q2
Q1
1.2
1.2
1.6
1.5
V
V
= V , I = 340 mA
2.0
2.0
GS(TH)
GS
DS
D
V
= V , I = 1 mA
DS D
GS
Threshold Temperature Coefficient
V
R
−4.4
−5.1
2.5
mV/°C
mW
I
D
= 340 mA, ref to 25°C
GS(TH)
/ T
J
I
= 1 mA, ref to 25°C
D
Drain−to−Source On Resistance
V
= 10 V, I = 20 A
3.0
3.8
DS(on)
GS
GS
D
V
= 4.5 V, I = 18 A
3.0
D
V
= 10 V, I = 41 A
Q2
0.60
0.75
147
311
0.4
0.72
0.95
GS
GS
D
V
= 4.5 V, I = 37 A
D
Forward Transconductance
Gate Resistance
g
V
= 5 V, I = 20 A
Q1
Q2
Q1
Q2
FS
DS
DS
D
V
= 5 V, I = 41 A
D
R
T = 25°C
A
W
G
0.4
CHARGES & CAPACITANCES
Input Capacitance
C
Q1: V = 0 V, V = 15 V, f = 1 MHz
Q1
Q2
Q1
Q2
Q1
Q2
1400
5050
421
1355
22
pF
pF
pF
ISS
GS
DS
Q2: V = 0 V, V = 13 V, f = 1 MHz
GS
DS
Output Capacitance
Reverse Capacitance
C
OSS
RSS
C
94
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
www.onsemi.com
2
NTMFD0D9N02P1E
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
CHARGES & CAPACITANCES
Total Gate Charge
Symbol
Test Condition
FET
Min
Typ
Max
Unit
nC
Q
Q1: V = 4.5V, V = 15V,
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
9
30
2
G(TOT)
GS
DS
= 20 A
I
D
Q2: V = 4.5V, V = 13V,
GS
DS
= 41 A
I
D
Gate−to−Drain Charge
Gate−to−Source Charge
Total Gate Charge
Q
Q
nC
GD
6
4
nC
GS
13
19
67
Q
V
V
= 10 V, V = 15 V, I = 20 A
nC
G(TOT)
GS
DS
D
= 10 V, V = 13 V, I = 41 A
GS
DS
D
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn−On Delay Time
t
V
= 4.5 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
15
2
ns
ns
ns
ns
d(ON)
GS
Q1: I = 20 A, V = 15 V, R = 6W
Q2: I = 41 A, V = 13 V, R = 6W
D
DD
G
D
DD
G
Rise Time
t
r(ON)
4
Turn−Off Delay Time
Fall Time
t
25
70
3
d(OFF)
t
f
10
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
V
= 0 V, I = 20 A
T = 25°C
Q1
Q2
0.8
0.68
0.8
0.64
26
1.2
1.2
V
SD
GS
S
J
T = 125°C
J
= 0 V, I = 41 A
T = 25°C
J
GS
S
T = 125°C
J
Reverse Recovery Time
t
V
GS
= 0 V,
Q1
Q2
Q1
Q2
ns
RR
Q1: I = 20 A, dI/dt = 100 A/ms
S
48
Q2: I = 41 A, dI/dt = 300 A/ms
S
Reverse Recovery Charge
Q
14
nC
RR
79
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
www.onsemi.com
3
NTMFD0D9N02P1E
TYPICAL CHARACTERISTICS (Q1 N−Channel) T = 25°C unless otherwise noted.
J
100
90
80
70
60
50
40
30
20
100
3.5 V
4.5 V
6.0 V
V
GS
= 3.0 V
10 V
90
80
70
60
50
40
30
20
V
DS
= 5 V
T = −55°C
J
T = 25°C
J
10
0
10
0
T = 150°C
J
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
9
8
7
6
5
4
5.0
4.5
4.0
3.5
3.0
T = 25°C
J
T = 25°C
D
J
I
= 20 A
V
= 4.5 V
= 10 V
GS
2.5
2.0
1.5
1.0
V
GS
3
2
0.5
0
2
3
4
5
6
7
8
9
10
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
100K
10K
1K
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
V
I
= 10 V
= 20 A
GS
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
100
0.8
10
1
0.7
0.6
0.5
T = 25°C
J
−50 −25
0
25
50
75
100
125 150
5
7
9
11 13 15 17 19 21 23 25
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
4
NTMFD0D9N02P1E
TYPICAL CHARACTERISTICS (Q1 N−Channel) T = 25°C unless otherwise noted.
J
10,000
1000
100
10
9
C
ISS
8
7
C
OSS
6
5
4
3
Q
Q
GD
GS
C
RSS
10
1
V
= 0 V
V
= 15 V
GS
DS
2
T = 25°C
T = 25°C
J
J
1
0
f = 1 MHz
I = 20 A
D
0
5
10
15
20
25
30
100
100
0
2
4
6
8
10 12 14 16 18 20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
100
10
1
t
t
d(off)
V
GS
= 0 V
f
t
t
d(on)
10
r
0.1
V
V
= 4.5 V
= 15 V
T = 150°C
GS
0.01
J
DS
I
D
= 20 A
T = 25°C
T = −55°C
J
J
0.001
1
1
10
R , GATE RESISTANCE (W)
0
0.2
0.4
0.6
0.8
1.0
1.2
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
100
10
100°C
100 ms
10
T
C
= 25°C
1 ms
Single Pulse
≤ 10 V
V
GS
1
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
25°C
125°C
1
0.1
0.1
1
10
0.001
0.01
0.1
T , TIME IN AVALANCHE (s)
AV
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
www.onsemi.com
5
NTMFD0D9N02P1E
TYPICAL CHARACTERISTICS (Q1 N−Channel) T = 25°C unless otherwise noted.
J
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
www.onsemi.com
6
NTMFD0D9N02P1E
TYPICAL CHARACTERISTICS (Q2 N−Channel) T = 25°C unless otherwise noted.
J
100
90
80
70
60
50
40
30
20
100
10 V
V
GS
= 3.0 V
90
80
70
60
50
40
30
20
4.5 V
3.5 V
T = −55°C
J
T = 25°C
J
10
0
10
0
T = 150°C
J
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2.00
1.75
T = 25°C
D
J
T = 25°C
J
I
= 41 A
1.50
1.25
1.00
0.75
0.50
V
= 4.5 V
= 10 V
GS
V
GS
0.25
0
0.5
0
2
3
4
5
6
7
8
9
10
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 16. On−Resistance vs. Gate−to−Source
Figure 17. On−Resistance vs. Drain Current
Voltage
and Gate Voltage
1.8
100K
10K
1K
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
V
I
= 10 V
= 41 A
GS
T = 150°C
J
D
T = 125°C
J
T = 85°C
J
100
0.8
10
1
0.7
0.6
0.5
T = 25°C
J
−50 −25
0
25
50
75
100
125 150
5
7
9
11 13 15 17 19 21 23 25
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 18. On−Resistance Variation with
Figure 19. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
7
NTMFD0D9N02P1E
TYPICAL CHARACTERISTICS (Q2 N−Channel) T = 25°C unless otherwise noted.
J
10,000
1000
100
10
9
8
7
C
ISS
C
OSS
6
5
4
3
C
RSS
Q
GD
Q
GS
10
1
V
= 0 V
V
= 13 V
GS
DS
2
T = 25°C
T = 25°C
J
J
1
0
f = 1 MHz
I
D
= 41 A
0
5
10
15
20
25
0
10
20
30
40
50
60
70
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 20. Capacitance Variation
Figure 21. Gate−to−Source Voltage vs. Total
Charge
100
100
10
1
t
V
GS
= 0 V
d(off)
t
d(on)
10
t
f
V
V
= 4.5 V
= 13 V
= 41 A
GS
0.1
DS
t
r
I
D
0.01
T = 125°C
J
T = 25°C
T = −55°C
J
J
0.001
1
1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 22. Resistive Switching Time Variation
vs. Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
100
1000
100
10
10 ms
100°C
100 ms
10
T
= 25°C
C
1 ms
Single Pulse
≤ 10 V
10 ms
V
GS
1
R
Limit
25°C
DS(on)
Thermal Limit
Package Limit
125°C
1
0.1
0.1
1
10
100
0.001 0.01
0.1
T , TIME IN AVALANCHE (s)
AV
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 24. Maximum Rated Forward Biased
Safe Operating Area
Figure 25. Maximum Drain Current vs. Time in
Avalanche
www.onsemi.com
8
NTMFD0D9N02P1E
TYPICAL CHARACTERISTICS (Q2 N−Channel) T = 25°C unless otherwise noted.
J
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.000001 0.00001
0.001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 26. Thermal Response
PowerTrench is a registered trademark of Semiconductor Components Industries, LLC.
www.onsemi.com
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5x6, 1.27P
CASE 483AR
ISSUE A
DATE 21 MAY 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13666G
PQFN8 5x6, 1.27P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
NTMFD1D1N02X
Dual Power MOSFETs, N-Channel, 25V, 3.0mΩ/75A, 0.87mΩ/178A, Asymmetric, Power Clip Dual 5x6
ONSEMI
©2020 ICPDF网 联系我们和版权申明