NTMFSS0D9N03P8 [ONSEMI]
MOSFET, Power Source Down, 30V Single N-Channel;
| 型号： | NTMFSS0D9N03P8 |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET, Power Source Down, 30V Single N-Channel |
| 文件： | 总6页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, Source-Down
30 V, 1.0 mW, 294 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1.0 mW @ 10 V
1.2 mW @ 4.5 V
30 V
294 A
NTMFSS0D9N03P8
Features
D (1,2,3,4)
• Advance 5x6 mm Package with Source Down and Center Gate Design
to Improve Power Density, Efficiency, and Thermal Performance
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G (5)
G
• These Devices are Pb−Free, Halogen−Free / BFR Free and are RoHS
Compliant
S (6,7,8,9)
N−CHANNEL MOSFET
Typical Applications
• ORing
• Motor Drives
• Power Load Switch
• DC−DC
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
9N03P8
AYWZZ
TDFN9 5x6
CASE 520AE
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
V
DSS
Gate−to−Source Voltage
V
20
V
A
Y
W
ZZ
= Assembly Location
= Year Code
= Work Week Code
GS
Continuous Drain
T
T
T
T
= 25°C
= 85°C
= 25°C
= 85°C
I
294
212
125
65
A
C
C
C
C
D
Current R
(Note 2)
q
JC
= Assembly Lot Code
Steady
State
Power Dissipation
(Note 2)
P
W
A
D
R
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Continuous Drain
Current R
T = 25°C
A
I
46
D
q
JA
T = 85°C
A
33
(Notes 1, 2)
Steady
State
Power Dissipation
T = 25°C
A
P
3.0
1.6
TBD
W
D
R
(Notes 1, 2)
q
JA
T = 85°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
Single Pulse Drain−to−Source Avalanche
E
304
260
mJ
AS
Energy (I
= 45 A, L = 0.3 mH)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.0
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
41
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2022 − Rev. 2
NTMFSS0D9N03P8/D
NTMFSS0D9N03P8
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 500 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
−37
mV/°C
(BR)DSS
I
D
= 500 mA, ref to 25°C
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
100
100
mA
DSS
J
V
V
= 0 V,
GS
DS
= 24 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 500 mA
1.0
3.0
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 500 mA, ref to 25°C
D
12
0.62
0.86
175
1
mV/°C
mW
GS(TH)
J
R
V
= 10 V, I = 30 A
1.0
1.2
DS(on)
GS
GS
D
V
= 4.5 V, I = 30 A
D
Forward Transconductance
Gate Resistance
g
FS
V
DS
= 5 V, I = 30 A
S
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
9000
3010
275
15
pF
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 15 V
DS
OSS
RSS
GS
Reverse Transfer Capacitance
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
C
Q
G(TH)
Q
24
V
GS
= 4.5 V, V = 15 V; I = 30 A
DS D
GS
Q
12
GD
Q
V
GS
= 10 V, V = 15 V; I = 30 A
127
nC
ns
G(TOT)
DS
D
SWITCHING CHARACTERISTICS, V = 10 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
20.4
19.3
d(ON)
t
r
V
= 10 V, V = 15 V,
DS
GS
D
I
= 30 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
125.4
49.5
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.75
0.58
68.4
35.2
33.2
92
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 30 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFSS0D9N03P8
TYPICAL CHARACTERISTICS
250
250
200
150
100
V
= 10 V to 4.5 V
GS
3.2 V
V
DS
= 10 V
3.4 V
200
150
100
3.0 V
T = 25°C
J
2.8 V
2.6 V
50
0
50
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
1.5
1.9
2.3
2.7
3.1
3.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
1.2
1.1
T = 25°C
J
T = 25°C
D
J
I
= 30 A
8
1.0
0.9
0.8
0.7
0.6
V
= 4.5 V
= 10 V
GS
7
6
5
4
V
GS
3
2
0.5
0.4
1
0
3
4
5
6
7
8
9
10
20 40
60
80 100 120 140 160 180 200
I , DRAIN CURRENT (A)
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.6
1.4
1.2
1.0
100K
10K
1K
T = 150°C
V
= 10 V
= 30 A
J
GS
I
D
T = 125°C
J
T = 85°C
J
100
T = 25°C
J
0.8
0.6
10
1
−50 −25
0
25
50
75
100
125
150
5
9
13
17
21
25
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFSS0D9N03P8
TYPICAL CHARACTERISTICS
100K
10K
10
V
= 0 V
GS
V
= 20 V
DS
9
8
7
6
5
4
3
2
T = 25°C
J
T = 25°C
J
f = 1 MHz
I
D
= 30 A
C
ISS
C
C
OSS
RSS
Q
Q
GD
GS
1K
1
0
100
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
1000
100
V
= 10 V
= 20 V
= 30 A
GS
V
DS
I
D
t
d(off)
1
10
1
t
r
t
f
T = 125°C
J
t
d(on)
T = 25°C
J
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10 ms
T
= 25°C
J(initial)
100 ms
T
= 100°C
10
J(initial)
T
C
= 25°C
Single Pulse
≤ 10 V
1 ms
V
GS
10 ms
100 ms
(DC)
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE(V)
T , TIME IN AVALANCHE (s)
AV
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFSS0D9N03P8
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFSS0D9N03P8
9N03P8
TDFN9
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFSS0D9N03P8
PACKAGE DIMENSIONS
TDFN9 5x6, 1.27P
CASE 520AE
ISSUE A
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