NTMTSC4D2N10GTXG [ONSEMI]
MOSFET Power, Single N-Channel, DFN8, 100V, 4.2mΩ, 178A;
| 型号： | NTMTSC4D2N10GTXG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET Power, Single N-Channel, DFN8, 100V, 4.2mΩ, 178A |
| 文件： | 总7页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, TDFNW8
100 V, 4.2 mW, 178 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
100 V
4.2 mW @ 10 V
178 A
D (5−8)
NTMTSC4D2N10G
Features
• Wide SOA for Linear Mode Operation
• Low R
to Minimize Conduction Losses
G (1)
DS(on)
• High Peak UIS Current Capability for Ruggedness
• Small Footprint (8x8 mm) & Top Metal Cooling
• These Devices are Pb−Free, Halogen−Free / BFR−Free and are RoHS
Compliant
S (2−4)
N−CHANNEL MOSFET
Typical Applications
• 48 V Hot Swap System, Load Switch, Soft−Start, E−Fuse
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
TDFNW8
DUAL COOL
CASE 507AS
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
178
125
267
133
21
A
C
D
Current R
(Note 2)
q
JC
T
C
Steady
State
Power Dissipation
(Note 2)
T
C
P
W
A
D
R
q
JC
T
C
= 100°C
MARKING DIAGRAM
Continuous Drain
Current R
I
D
T = 25°C
A
q
JA
15
T = 100°C
A
(Notes 1, 2)
Steady
State
Power Dissipation
T = 25°C
A
P
3.9
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
1.9
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
2558
A
A
p
4D2N10G AWLYW
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
4D2N10G = Specific Device Code
= Assembly Location
WL = Wafer Lot Code
A
Source Current (Body Diode)
I
S
222
506
A
Y
W
= Year Code
= Work Week Code
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 100 A, L = 0.1 mH)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.56
Unit
Junction−to−Case − Steady State (Note 2)
R
°C/W
q
JC
Junction−to−Top Source − Steady State
R
0.86
q
JC
(Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
38
q
JA
2
1. Surface−mounted on FR4 board using a 1 in , 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2023 − Rev. 1
NTMTSC4D2N10G/D
NTMTSC4D2N10G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
84.1
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
100
100
DSS
GS
DS
J
V
= 80 V
mA
T = 150°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 450 mA
2.0
4.0
4.2
V
mV/°C
mW
S
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
J
I = 450 mA, ref to 25°C
D
−9.24
2.9
GS(TH)
R
V
GS
= 10 V
I = 88 A
D
DS(on)
g
V
=5 V, I = 88 A
61
FS
DS
D
Gate Resistance
R
T = 25°C
A
0.9
W
G
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
10450
1050
158
159
27.7
61
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 50 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Q
G(TH)
V
GS
= 10 V, V = 50 V; I = 88 A
DS D
Q
GS
GD
Q
38
t
40
36
76
26
d(ON)
Rise Time
t
r
V
= 10 V, V = 50 V,
DS
GS
D
ns
V
I
= 88 A, R = 4.7 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.82
0.70
46.7
224
1.2
SD
J
V
S
= 0 V,
GS
I
= 88 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
ns
nC
ns
RR
V
= 0 V, dIS/dt = 300 A/ms,
GS
I
S
= 44 A
Q
RR
RR
t
46.1
595
V
= 0 V, dIS/dt = 1000 A/ms,
GS
I
S
= 44 A
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMTSC4D2N10G
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
400
V
GS
= 15 to 9.5 V
9.0 V
350
300
250
200
150
100
T = −55°C
J
8.5 V
8.0 V
T = 25°C
J
7.5 V
7.0 V
T = 125°C
J
6.5 V
6.0 V
5.5 V
50
0
50
0
5.0 V
4.5 V
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
7
6
5
4
50
45
40
35
30
25
20
15
10
T = 25°C
J
T = 25°C
D
J
I
= 88 A
V
GS
= 10 V
3
2
1
0
5
0
2
3
4
5
6
7
8
9
10
50
100
150
200
250
300
350
400
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current
Voltage
2.0
1.8
1.6
1.4
1.2
1.0
100M
10M
1M
T = 150°C
I
V
= 88 A
J
D
= 10 V
T = 125°C
J
GS
T = 85°C
J
100K
10K
1K
T = 25°C
J
100
0.8
0.6
0.4
10
1
−50 −25
0
25
50
75 100 125 150 175
5
15
25
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
35
45
55
65
75
85
95
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMTSC4D2N10G
TYPICAL CHARACTERISTICS
100K
10K
10
C
ISS
8
Q
Q
GD
GS
C
C
OSS
1K
6
4
RSS
100
V
= 50 V
= 88 A
DS
V
= 0 V
10
1
2
0
GS
I
D
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
20
40
60
80
100
0
20
40
60
80
100 120
140 160
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
V
= 0 V
GS
V
V
= 10 V
= 50 V
= 88 A
GS
DS
I
D
T = 175°C
J
t
d(off)
100
t
t
d(on)
r
T = 150°C
J
T = 125°C
J
t
f
10
1
T = 25°C
J
T = −55°C
J
10
1
10
R , GATE RESISTANCE (W)
100
0
0.4
0.8
1.2
1.6
2.0
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
10 ms
100 ms
1 ms
T
= 25°C
J(initial)
T
= 25°C
T
= 100°C
C
J(initial)
Single Pulse
≤ 10 V
10
1
V
GS
10 ms
100 ms
1 sec
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
10
100
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (sec)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMTSC4D2N10G
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
20%
10%
5%
0.1
2%
0.01
1%
0.001
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Junction−to−Ambient Transient Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMTSC4D2N10G
4D2N10G
TDFNW8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 3
CASE 507AS
ISSUE B
DATE 29 MAR 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
A
= Assembly Location
WL = Wafer Lot Code
Y
= Year Code
W
= Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON95716G
TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 3
PAGE 1 OF 1
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