NTSV30100SG [ONSEMI]
Very Low Forward Voltage Trench-based Schottky Rectifier; 非常低正向电压沟槽型肖特基整流器
| 型号： | NTSV30100SG |
| 厂家： | 
ONSEMI |
| 描述： | Very Low Forward Voltage Trench-based Schottky Rectifier |
| 文件： | 总5页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTSV30100SG
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.41 V at IF = 5 A
http://onsemi.com
Features
1
3
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
2, 4
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
4
• High Surge Capability
TO−220AB
CASE 221A
STYLE 3
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
1
2
3
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
MARKING DIAGRAM
• Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded
AYWW
TSV30100SG
AKA
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Weight (Approximately): 1.9 grams
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
A
Y
= Assembly Location
= Year
WW
G
AKA
= Work Week
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
†
Device
Package
Shipping
TO−220
(Pb−Free/
NTSV30100SG
50 Units/Rail
Halide−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
June, 2012 − Rev. 0
NTSV30100S/D
NTSV30100SG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
100
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
30
60
A
A
A
F(AV)
(Rated V , T = 105°C)
R
C
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz, T = 95°C)
R
C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
100
FSM
Operating Junction Temperature
T
−40 to +150
−65 to +175
10,000
°C
°C
J
Storage Temperature
T
stg
Voltage Rate of Change (Rated V )
dv/dt
V/ms
R
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
R
2.0
70
°C/W
°C/W
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(I = 5 A, T = 25°C)
v
V
F
0.47
0.57
0.915
−
−
1.1
F
J
(I = 10 A, T = 25°C)
F
J
(I = 30 A, T = 25°C)
F
J
(I = 5 A, T = 125°C)
0.41
0.54
0.78
−
−
0.85
F
J
(I = 10 A, T = 125°C)
F
J
(I = 30 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 1)
(V = 70 V, T = 25°C)
I
R
12
11
mA
mA
R
J
(V = 70 V, T = 125°C)
R
J
(Rated dc Voltage, T = 25°C)
55
27
1000
60
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
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2
NTSV30100SG
TYPICAL CHARACTERISTICS
100
10
1
1000
100
10
T = 150°C
A
T = 150°C
A
T = 125°C
A
1
T = 125°C
0.1
A
T = 25°C
A
0.01
0.001
T = 25°C
A
0.1
0.0
0.2
0.4
0.6
0.8
1.0
20
30
40
50
60
70
80
90
100
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Typical Reverse Characteristics
10000
1000
100
60
R
= 1.3°C/W
T = 25°C
J
55
50
45
40
35
30
25
20
15
10
5
q
JC
dc
SQUARE WAVE
0
0.1
1
10
100
0
20
40
60
80
100
120
140
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating, Case
45
T = 150°C
A
I /I = 20
PK AV
40
35
30
25
20
15
10
5
I
/I = 10
PK AV
I /I = 5
PK AV
SQUARE
WAVE
dc
0
0
2
4
6
8
10 12
14 16 18 20
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 5. Forward Power Dissipation
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3
NTSV30100SG
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Single Pulse
0.00001
1%
0.01
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Time (sec)
Figure 6. Typical Transient Thermal Response, Junction−to−Case
http://onsemi.com
4
NTSV30100SG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.91
4.09
2.66
4.10
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.036
0.161
0.105
0.161
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTSV30100S/D
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