NTTBC070NP10M5L [ONSEMI]
MOSFET - Power, Dual N- & P-Channel, u8FL;
| 型号： | NTTBC070NP10M5L |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Dual N- & P-Channel, u8FL |
| 文件： | 总12页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MOSFET - Power, Dual N- &
P-Channel, m8FL
100 V, 70 mW, 9.5 A,
-100 V, 186 mW, -5 A
NTTBC070NP10M5L
Features
www.onsemi.com
• Small Footprint (3 x 3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
G
100 V
70 mW @ 10 V
186 mW @ 10 V
9.5 A
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
−100 V
−5 A
Compliant
Typical Applications
Dual−Channel MOSFET
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• Motor Drive, Home Automation
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
J
Parameter
Symbol
Q1
100
20
Q2
−100
20
Unit
V
Drain−to−Source Breakdown Voltage
Gate−to−Source Voltage
V
(BR)DSS
V
GS
V
Continuous
Steady
State
T
C
= 25°C
I
D
9.5
−5
A
Drain Current
R
(Note 2)
q
JC
Power Dissi-
pation R
P
14
3.5
1.9
33
10
−2.2
1.9
33
W
A
D
D
q
JC
(Note 2)
Continuous
Steady T = 25°C
I
D
A
Drain Current
State
R
(Note 1, 2)
q
JA
Power Dissi-
pation R
P
W
q
JA
(Note 1, 2)
m8FL
CASE 511DG
Pulsed Drain
Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Tem-
perature Range
T , T
−55 to +150
°C
J
stg
MARKING DIAGRAM
Source Current (Body Diode)
I
12
26
8
A
&Y&Z&2&K
70NP
10M5L
S
Single Pulse Drain−to−Source
E
AS
30
mJ
Avalanche Energy
(I = 7.3 A, 7.8 A, L = 1 mH)
L
&Y
&Z
&2
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
Lead Temperature Soldering Reflow for
Soldering Purposes
T
260
260
°C
L
(1/8” from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
70NP10M5L = Specific Device Code
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
June, 2021 − Rev. 0
NTTBC070NP10M5L/D
NTTBC070NP10M5L
THERMAL CHARACTERISTICS
Symbol
Parameter
Q1
8.9
65
Q2
12.5
65
Unit
Junction−to−Case – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 3)
°C/W
R
R
q
JC
JA
q
3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS (Q1, N−CHANNEL) (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/ T
J
70
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
= 0 V,
GS
DS
V
= 100 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
= V , I = 24 mA
1.0
3.0
V
GS(TH)
GS
DS
D
/
Negative Threshold Temperature
Coefficient
V
T
J
7.1
mV/°C
GS(TH)
I
D
= 24 mA, ref to 25°C
Drain−to−Source On Resistance
R
V
= 10 V, I = 1.3A
47
67
70
mW
DS(on)
GS
D
V
GS
= 4.5 V, I = 1.0 A
102
D
Forward Transconductance
Gate−Resistance
g
V
DS
= 5 V, I = 4 A
6.2
0.74
S
FS
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
252
64
3
pF
nC
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
GS
= 0 V, f = 1 MHz, V = 50 V
DS
OSS
RSS
C
Q
3
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
0.6
1.0
1.1
5.6
2.6
G(TH)
V
= 4.5 V, V = 50 V, I = 1.3 A
DS D
GS
Q
GS
Q
GD
Q
G(TOT)
V
= 10 V, V = 50 V, I = 1.3 A
DD D
GS
Plateau Voltage
V
V
GP
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
5.3
2.5
12.4
7.5
7.6
7.6
10.4
9
ns
d(ON)
t
r
V
= 10 V, V = 50 V, I = 1.3 A,
DS D
GS
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
Turn−On Delay Time
Rise Time
t
ns
d(ON)
t
r
V
GS
= 4.5 V, V = 50 V, I = 1.3 A,
DS D
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
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2
NTTBC070NP10M5L
ELECTRICAL CHARACTERISTICS (Q1, N−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
Parameter
OFF CHARACTERISTICS
Forward Diode Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
V
V
SD
T = 25°C
0.75
0.6
28
13
15
8
1.2
J
V
S
= 0 V,
GS
I
= 1.3 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, dI /dt = 50 A/ms,
S
I
S
= 1.2 A
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS (Q2, P−CHANNEL) (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/ T
J
60
mV/°C
(BR)DSS
I
D
= −250 mA, ref to 25°C
Zero Gate Voltage Drain Current
I
T = 25°C
−1
mA
DSS
J
V
GS
= 0 V, V = −100 V
DS
T = 125°C
J
−100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
I
V
DS
= 0 V, V
=
20 V
nA
GSS
GS
V
V
GS
= V , I = −40 mA
−2.0
−4.0
V
GS(TH)
DS
D
/
Negative Threshold Temperature
Coefficient
V
T
J
6.6
mV/°C
GS(TH)
I
D
= −40 mA, ref to 25°C
Drain−to−Source On Resistance
R
V
= −10 V, I = −2.2 A
146
178
5.9
186
284
mW
DS(on)
GS
D
V
= −6 V, I = −1.4 A
D
GS
Forward Transconductance
Gate−Resistance
g
FS
V
= 5 V, I = −4 A
S
DS
D
R
T = 25°C
A
1.75
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
256
63
pF
nC
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
= 0 V, f = 1 MHz, V = −50 V
DS
OSS
RSS
GS
C
3
Q
7.3
1.5
2.4
1.2
4.6
4.5
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
= −10 V, V = −50 V, I = −2.2 A
DS D
GS
Q
GS
GD
Q
Q
nC
V
G(TOT)
V
GS
= −6 V, V = −50 V, I = −2.2 A
DD D
Plateau Voltage
V
GP
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
8.9
3.6
ns
d(ON)
t
r
V
GS
= −10 V, V = −50 V, I = −2.2 A,
DS D
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
13.2
3.4
d(OFF)
t
f
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3
NTTBC070NP10M5L
ELECTRICAL CHARACTERISTICS (Q2, P−CHANNEL) (T = 25°C unless otherwise noted) (continued)
J
Parameter
Turn−On Delay Time
Symbol
Test Conditions
Min
Typ
10.8
4.8
Max
Unit
t
ns
d(ON)
Rise Time
t
r
V
GS
= −6 V, V = −50 V, I = −2.2 A,
DS D
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
10
d(OFF)
t
f
4.1
OFF CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
−0.86
−0.72
34
−1.2
V
SD
J
V
S
= 0 V,
GS
I
= −2.2 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
27
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= −1.1 A
Discharge Time
7
b
Reverse Recovery Charge
Q
53
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NTTBC070NP10M5L
TYPICAL CHARACTERISTICS − N−CHANNEL
30
25
20
15
10
15
V
GS
= 10 to 7 V
V
DS
= 0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
4.0 V
3.6 V
T = 25°C
J
5
0
5
0
3.0 V
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
100
90
80
70
60
300
250
200
150
100
T = 25°C
J
T = 25°C
D
J
I
= 1.3 A
V
GS
= 4.5 V
V
GS
= 10 V
50
40
50
0
3
4
5
6
7
8
9
10
1
3
5
7
9
11
13
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current
Voltage
2.0
1.5
1.0
10K
1K
T = 150°C
I
V
= 1.3 A
J
D
= 10 V
GS
T = 125°C
J
100
T = 85°C
J
10
1
T = 25°C
J
0.5
0
0.1
0.01
−50 −25
0
25
50
75
100
125
150
10
20
30
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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5
NTTBC070NP10M5L
TYPICAL CHARACTERISTICS − N−CHANNEL
10K
1K
10
8
C
C
ISS
6
4
100
OSS
Q
Q
GD
GS
10
1
V
I
= 50 V
= 1.3 A
DS
V
= 0 V
2
0
GS
C
RSS
D
T = 25°C
J
T = 25°C
J
f = 1 MHz
0.1
1
10
100
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1.3
1.2
100
V
V
= 4.5 V
= 50 V
GS
V
GS
= 0 V
DS
1.1
1.0
0.9
0.8
0.7
0.6
I
D
= 1.3 A
t
r
t
f
t
d(off)
d(on)
T = 150°C
J
10
t
T = 125°C
J
T = 25°C
J
0.5
0.4
0.3
T = −55°C
J
1
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.8
1.0
1.2
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
1
T
= 25°C
10
J(initial)
300 ms
1 ms
T
= 100°C
T = 25°C
J(initial)
A
Single Pulse
V
≤ 10 V
10 ms
100 ms
1 sec
0.1
GS
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.01
0.1
1
10
100
0.000001
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (sec)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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NTTBC070NP10M5L
TYPICAL CHARACTERISTICS − N−CHANNEL
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Junction−to−Ambient Transient Thermal Response
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NTTBC070NP10M5L
TYPICAL CHARACTERISTICS − P−CHANNEL
20
15
10
12
V
GS
= −10 to −6.5 V
V
DS
= 0 V
10
8
−6.0 V
−5.5 V
6
T = 25°C
J
−5.0 V
4
5
0
−4.5 V
−4.0 V
2
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
6
7
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 14. On−Region Characteristics
Figure 15. Transfer Characteristics
500
400
300
200
220
200
180
T = 25°C
D
T = 25°C
J
J
I
= −2.2 A
V
= −6 V
GS
160
140
V
GS
= −10 V
100
0
120
100
4
5
6
7
8
9
10
1.0
1.2
1.4
1.6
1.8
2.0
2.2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 16. On−Resistance vs. Gate−to−Source
Figure 17. On−Resistance vs. Drain Current
Voltage
2.5
2.0
1.5
1.0
10K
1K
I
V
= −2.2 A
D
= −10 V
GS
T = 150°C
J
T = 125°C
J
100
T = 85°C
J
10
1
T = 25°C
J
0.5
0
0.1
0.01
−50 −25
0
25
50
75 100 125 150 175
5
15
25
35
45
55
65
75
85
95
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 18. On−Resistance Variation with
Figure 19. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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NTTBC070NP10M5L
TYPICAL CHARACTERISTICS − P−CHANNEL
10K
1K
10
8
C
ISS
6
4
Q
Q
GD
GS
100
C
OSS
10
1
V
I
= −50 V
= −2.2 A
DS
V
= 0 V
2
0
GS
C
RSS
D
T = 25°C
J
T = 25°C
J
f = 1 MHz
0.1
1
10
100
0
1
2
3
4
5
6
7
8
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 20. Capacitance Variation
Figure 21. Gate−to−Source Voltage vs. Total
Charge
2.5
2.0
1.5
100
V
GS
= 0 V
V
= −6 V
= −50 V
= −2.2 A
GS
V
DS
I
t
r
D
t
T = 150°C
J
d(on)
t
d(off)
T = 125°C
J
10
t
f
1.0
0.5
T = 25°C
J
T = −55°C
J
1
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 22. Resistive Switching Time Variation
vs. Gate Resistance
Figure 23. Diode Forward Voltage vs. Current
10
1
T
= 25°C
J(initial)
300 ms
10
1 ms
T
= 100°C
J(initial)
T = 25°C
A
Single Pulse
10 ms
V
GS
≤ 10 V
0.1
100 ms
R
Limit
DS(on)
1 sec
Thermal Limit
Package Limit
1
0.01
0.1
1
10
100
0.000001
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (sec)
Figure 24. Safe Operating Area
Figure 25. IPEAK vs. Time in Avalanche
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NTTBC070NP10M5L
TYPICAL CHARACTERISTICS − P−CHANNEL
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 26. Junction−to−Ambient Transient Thermal Response
ORDERING INFORMATION
Device
†
Device Marking
Package
Shipping (Qty / Packing)
NTTBC070NP10M5L
70NP10M5L
m8FL
3000 / Tape & Reel
(Pb−Free/Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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10
NTTBC070NP10M5L
PACKAGE DIMENSIONS
WDFN8 3x3, 0.65P
CASE 511DG
ISSUE A
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相关型号：
NTTD4401FR2G
2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 846A-02, MICRO-8
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