NTTD1P02R2 [ONSEMI]
Power MOSFET -1.45 Amps, -20 Volts; 功率MOSFET -1.45安培，伏特-20
| 型号： | NTTD1P02R2 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET -1.45 Amps, -20 Volts |
| 文件： | 总6页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTTD1P02R2
Power MOSFET
−1.45 Amps, −20 Volts
P−Channel Enhancement Mode
Dual Micro8 Package
Features
• Ultra Low R
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual Micro8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
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DS(on)
−1.45 AMPERES
−20 VOLTS
160 mW @ VGS = −4.5
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
Dual P−Channel
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
G
Drain−to−Source Voltage
V
DSS
−20
V
V
Gate−to−Source Voltage − Continuous
V
GS
"8.0
S
Thermal Resistance −
Junction−to−Ambient (Note 1.)
R
P
250
0.50
°C/W
W
θ
JA
Total Power Dissipation @ T = 25°C
A
D
Continuous Drain Current @ T = 25°C
I
I
−1.45
−1.15
−10
A
A
A
A
D
8
Continuous Drain Current @ T = 70°C
A
D
Pulsed Drain Current (Note 3.)
I
DM
1
Thermal Resistance −
Junction−to−Ambient (Note 2.)
R
P
I
125
1.0
−2.04
−1.64
−16
°C/W
W
A
A
A
Micro8
CASE 846A
STYLE 2
θ
JA
Total Power Dissipation @ T = 25°C
A
D
Continuous Drain Current @ T = 25°C
A
D
Continuous Drain Current @ T = 70°C
I
A
D
Pulsed Drain Current (Note 3.)
I
DM
Operating and Storage
Temperature Range
T , T
−55 to
+150
°C
MARKING DIAGRAM
& PIN ASSIGNMENT
J
stg
Single Pulse Drain−to−Source Avalanche
E
AS
35
mJ
Energy − Starting T = 25°C
1
2
3
4
Drain 1
Drain 1
Drain 2
Drain 2
8
7
6
5
Source 1
Gate 1
Source 2
J
(V = −20 Vdc, V = −4.5 Vdc,
DD
GS
YWW
BC
Peak I = −3.5 Apk, L = 5.6 mH,
L
Gate 2
R
= 25 Ω)
G
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260
°C
(Top View)
= Year
1. Minimum FR−4 or G−10 PCB, Steady State.
Y
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State.
WW = Work Week
BC = Device Code
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
ORDERING INFORMATION
†
Device
NTTD1P02R2
Package
Shipping
Micro8
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
December, 2003 − Rev. 1
NTTD1P02R2/D
NTTD1P02R2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V = 0 Vdc, I = −250 µAdc)
V
Vdc
(BR)DSS
−20
−
−
−12
−
−
GS
D
Temperature Coefficient (Positive)
mV/°C
µAdc
Zero Gate Voltage Drain Current
I
DSS
(V = 0 Vdc, V = −20 Vdc, T = 25°C)
−
−
−
−
−1.0
−10
GS
DS
J
(V = 0 Vdc, V = −20 Vdc, T = 125°C)
GS
DS
J
Gate−Body Leakage Current
(V = −8 Vdc, V = 0 Vdc)
I
I
nAdc
nAdc
GSS
−
−
−
−
−100
100
GS
DS
Gate−Body Leakage Current
(V = +8 Vdc, V = 0 Vdc)
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
Vdc
(V = V , I = −250 µAdc)
Temperature Coefficient (Negative)
−0.7
−
−0.95
2.3
−1.4
−
DS
GS
D
Static Drain−to−Source On−State Resistance
R
Ω
DS(on)
(V = −4.5 Vdc, I = −1.45 Adc)
−
−
−
0.130
0.175
0.190
0.160
0.250
−
GS
D
(V = −2.7 Vdc, I = −0.7 Adc)
GS
D
(V = −2.5 Vdc, I = −0.7 Adc)
GS
D
Forward Transconductance (V = −10 Vdc, I = −0.7 Adc)
g
FS
−
2.5
−
Mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
265
100
60
−
−
−
iss
(V = −16 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Reverse Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Notes 5. & 6.)
Turn−On Delay Time
t
−
−
−
−
−
−
−
−
−
−
−
10
25
30
25
10
20
30
20
5.0
1.5
2.0
−
−
ns
ns
d(on)
Rise Time
t
r
(V = −16 Vdc, I = −1.45 Adc,
DD
D
V
GS
= −4.5 Vdc, R = 6.0 Ω)
G
Turn−Off Delay Time
Fall Time
t
t
t
−
d(off)
t
f
−
Turn−On Delay Time
Rise Time
−
d(on)
t
r
−
(V = −16 Vdc, I = −0.7 Adc,
DD
D
V
GS
= −4.5 Vdc, R = 6.0 Ω)
G
Turn−Off Delay Time
Fall Time
−
d(off)
t
f
−
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Q
10
−
nC
tot
gs
gd
(V = −16 Vdc,
DS
Q
Q
V
GS
= −4.5 Vdc,
I
D
= −1.45 Adc)
−
BODY−DRAIN DIODE RATINGS (Note 5.)
Diode Forward On−Voltage
(I = −1.45 Adc, V = 0 Vdc)
V
−
−
−0.91
−0.72
−1.1
−
Vdc
ns
S
GS
SD
(I = −1.45 Adc, V = 0 Vdc,
S
GS
T = 125°C)
J
Reverse Recovery Time
t
−
−
−
−
25
13
−
−
−
−
rr
(I = −1.45 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/µs)
S
t
12
b
Reverse Recovery Stored Charge
Q
0.015
µC
RR
4. Handling precautions to protect against electrostatic discharge is mandatory.
5. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
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2
NTTD1P02R2
3
2
3
−2.7 V
−2.9 V
−3.1 V
−3.3 V
−3.7 V
−4.5 V
−2.5 V
V
DS
≥ −10 V
−2.3 V
T = 25°C
J
−2.1 V
2
−8 V
−1.9 V
−1.7 V
T = −55°C
J
1
0
1
0
T = 100°C
T = 25°C
J
J
V
= −1.5 V
GS
0
0.25
0.5
0.75
1
1.25
1.5
1.75
0
0.5
1
1.5
2
2.5
3
3.5
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.4
0.3
0.2
T = 25°C
J
I
= −1.45 A
D
0.3
0.2
0.1
0
V
GS
= −2.5 V
T = 25°C
J
V
V
= −2.7 V
= −4.5 V
GS
GS
0.1
0
0
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
3
3.5
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I DRAIN CURRENT (AMPS)
D,
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
1.4
1.2
1
100
10
1
V
GS
= 0 V
I
V
= −1.45 A
D
= −4.5 V
GS
T = 125°C
J
T = 100°C
J
0.8
0.6
−50 −25
0
25
50
75
100
125 150
4
8
12
16
20
T
J,
JUNCTION TEMPERATURE (°C)
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTTD1P02R2
800
5
20
18
16
14
12
10
8
QT
Q2
V
= 0 V
V
GS
= 0 V
DS
C
iss
T = 25°C
J
4
3
2
600
400
C
rss
−V
GS
Q1
C
C
iss
6
200
0
I
D
= −1.45 A
1
0
−V
DS
4
T = 25°C
J
oss
rss
2
0
C
0
1
2
3
4
5
6
10
5
0
5
10
15
20
−V
GS
−V
DS
Q , TOTAL GATE CHARGE (nC)
g
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 7. Capacitance Variation
100
V
D
= −16 V
V
= 0 V
DD
GS
1.6
1.2
0.8
I
= −1.45 A
T = 25°C
J
V
GS
= −4.5 V
t
r
t
d (off)
10
t
f
t
d (on)
0.4
0
1
10
100
1
0.4
0.5
0.6
0.7
0.8
0.9
1
R
GATE RESISTANCE (OHMS)
−V
SD,
SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G,
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage
versus Current
100
V
GS
= 8 V
SINGLE PULSE
di/dt
T
C
= 25°C
I
S
10
1
100 ms
t
rr
1 ms
t
a
t
b
TIME
10 ms
0.25 I
t
p
S
0.1
I
S
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
dc
0.01
0.1
1
10
100
Figure 12. Diode Reverse Recovery Waveform
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTTD1P02R2
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10
D = 0.5
0.2
0.1
0.05
P
(pk)
R
(t) = r(t) R
θ
JC
0.02
0.01
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
1
t
1
READ TIME AT t
1
t
2
T
− T = P
C
R (t)
θ
JC
J(pk)
(pk)
SINGLE PULSE
DUTY CYCLE, D = t /t
1 2
0.1
1.0E−05 1.0E−04
1.0E−03
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 13. Thermal Response
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5
NTTD1P02R2
PACKAGE DIMENSIONS
Micro8
CASE 846A−02
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−A−
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
−B−
K
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.
PIN 1 ID
G
MILLIMETERS
INCHES
D 8 PL
DIM MIN
MAX
3.10
3.10
1.10
MIN
MAX
0.122
0.122
0.043
0.016
M
S
S
0.08 (0.003)
T
B
A
A
B
C
D
G
H
J
2.90
2.90
−−−
0.114
0.114
−−−
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
0.25
0.40 0.010
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
0.65 BSC
0.026 BSC
SEATING
PLANE
0.05
0.13
4.75
0.40
0.15 0.002
0.23 0.005
5.05 0.187
0.70 0.016
0.006
0.009
0.199
0.028
−T−
C
0.038 (0.0015)
K
L
L
J
H
SOLDERING FOOTPRINT*
1.04
0.38
8X
8X 0.041
0.015
3.20
4.24
5.28
0.126
0.167 0.208
0.65
6X0.0256
SCALE 8:1
mm
inches
ǒ
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Micro8 is a trademark of International Rectifier.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTTD1P02R2/D
相关型号：
NTTD4401FR2G
2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 846A-02, MICRO-8
ROCHESTER
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